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  • American Institute of Physics (AIP)  (3)
  • 1985-1989  (3)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6858-6860 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to ionizing radiation detection is proposed. The amount of ionization produced in a detector medium is measured by the heat generated as the charged carriers are drifted across the device under an applied voltage. The amount of energy generated can be orders of magnitude larger than that deposited by the radiation itself. A dramatic increase in detector mass can be achieved compared to simple calorimetric particle detectors for equivalent energy thresholds. It is possible to obtain a sensitivity level sufficient for single-carrier detection. The principle of operation has been demonstrated with an experimental device operated at a temperature of 1.8 K, and improved performance is expected at lower temperatures.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3734-3736 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new isotope-specific and quantitative technique based on self-detection in a position-sensitive detector has been developed for the imaging of radio-carbon clusters in high-purity Ge. Using a novel position-sensitive detector concept, a one-dimensional spatial resolution of ∼200 μm FWHM and a sensitivity of ∼6×107 14C atoms per cluster has been obtained. This technique can be applied to other semiconductors which can be used to fabricate self-counting position-sensitive nuclear radiation detectors.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2213-2215 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly measured the excitation of electron-hole pairs at a crystal surface by ground-state neutral atoms. Utilizing seeded molecular beam techniques we have scattered hyperthermal (1–6 eV) Xe atoms from the (100) face of a Ge p-i-n diode and recorded the current transient induced due to the scattering process. We find the product of the excitation and collection probability to be ∼10−4 over a range of kinetic energies 2〈EXe(eV)〈6. The excitation of electron-hole pairs constitutes a small portion of the massive energy loss (ΔE/E∼70%) of the Xe atom to the crystal.
    Type of Medium: Electronic Resource
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