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  • Books
  • Articles  (5)
  • American Institute of Physics (AIP)  (5)
  • Oxford University Press
  • 1985-1989  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 493-495 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs semiconductor lasers with very high quality etched facets have been fabricated. Laser facets are formed by the chemically assisted ion beam etching technique with SiO2 as the etch mask. The threshold current densities of lasers produced with this technique are almost identical to comparable lasers with one etched and one cleaved facet. L-shaped lasers, which make use of total internal reflection, have also been fabricated. The threshold current density of L-shaped lasers is similar to that of rectangular lasers with comparable cavity length.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1684-1686 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a fast-acting high-pressure puff valve for use in imploding gas-puff experiments is presented. By using a pressure-balanced valve design, the valve can operate at pressures up to 500 psia. Fast opening (≈200 μs) is achieved by using a fast-moving sliding hammer to open the valve. Balanced valves as well as fast-opening valves using sliding hammers are both well-known technologies; however, this design is the first one to incorporate both features in a single design resulting in a fast-acting high-pressure puff valve.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 830-833 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The poloidal electric field generated by electron heating in a collision dominated tokamak plasma is calculated by the adjoint method. The physical mechanism is elucidated as due to a combination of the Doppler shifted cyclotron resonance and magnetic field inhomogeneity. For uniform rf field on a flux surface, the normalized electrostatic potential is found to be much smaller than the inverse aspect ratio for realistic power levels.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 28 (1985), S. 3082-3098 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The neoclassical theory of ion transport in rotating axisymmetric plasmas is formulated. The flow speed is allowed to be of the order of the ion thermal speed. It is shown that the ion distribution function becomes Maxwellian, with temperature uniform on a magnetic surface, and the poloidal flow decays, in a few transit or collision times, in general. A drift kinetic equation is derived which is a simple generalization of the drift kinetic equation for nonrotating plasmas. The radial gradient of the toroidal angular velocity appears as a driving term like the temperature gradient. Both gradients drive the transport of toroidal angular momentum and energy, in general; Onsager relations for the two-by-two transport matrix are derived. The off-diagonal transport coefficients are shown to be zero if the magnetic field has up–down symmetry. A simple expression for the enhancement of the ion thermal conductivity in the banana regime, caused by rotation, is derived. The neoclassical viscosity is shown not to be enhanced by rotation in the banana regime, and to be small in the collisionality parameter in the collisional regime, assuming up–down symmetry. In the collisional regime, the thermal conductivity is shown to be suppressed by the effects of rotation.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5894-5900 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterojunction devices have been fabricated by a low-pressure chemical vapor deposition technique whereby n-type amorphous or microcrystalline silicon films were grown on p-type crystalline silicon substrates. Heterostructures produced under various conditions of thin film deposition were subjected to detailed I-V curve analysis. It is seen that for amorphous-crystalline heterojunctions the current transport is through tunneling in the low bias range and limited by electron-hole recombination in the high bias range. For the microcrystalline-crystalline junctions however, recombination current at the interface dominates the current transport process. Illuminated I-V curves corresponding to films deposited at different substrate temperatures (Ts ) and dopant gas-to-silane ratios (R) show that the high values of the short-circuit current (Isc), open-circuit voltage (Voc ), and fill factor (FF) are achieved at values close to Ts ∼620 °C and R ∼4×10−3 in conformance with dark I-V characteristic data.
    Type of Medium: Electronic Resource
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