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  • Springer  (229)
  • Springer Nature  (47)
  • American Institute of Physics (AIP)  (31)
  • Cell Press  (10)
  • 1985-1989  (317)
  • 11
    Electronic Resource
    Electronic Resource
    Theory of response of radiation sensing field-effect transistors in zero-bias operation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1216-1217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation sensing field-effect transistors operated at zero bias show a low-dose response that is roughly linear in the thickness of the gate oxide. The same devices show a thickness squared dependence if a bias is applied during the irradiation. This effect can be explained by examining the effect of diffusion and electron trapping on the buildup of net positive charge in the gate oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337369
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  • 12
    Electronic Resource
    Electronic Resource
    Time-resolved optical emissions from high-current relativistic electron beams propagating in 150-mTorr air (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1866-1871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a time-resolved study of optical emissions from high-current relativistic (6.5 MeV) electron beams propagating in air at a pressure of 150 mTorr are presented. The emissions included N+ lines at λλ4803, 4630, 4552, and 4530 A(ring). Data were obtained on a single-shot basis by simultaneously recording the temporal history of all four ion lines. For propagating electron beam pulses, each ion line exhibited peak intensity a few microseconds after the passage of the 80-ns-wide electron pulse. This behavior is explained on the basis of inductive (magnetic) energy storage in the return current plasma channel. Spatially integrated plasma temperatures are measured to be in the 20 000–30 000 K range, reaching a maximum when the inductive energy storage has gone to zero.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336414
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  • 13
    Electronic Resource
    Electronic Resource
    Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1972-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new design for radiation-sensing field-effect transistors (RADFETs) is presented, involving the use of very thick silicon nitride layers deposited on top of a high-quality thermal silicon dioxide. In contrast to previous RADFET fabrication procedures, no attempt was made to introduce hole traps into the thermal oxide. Instead the trapping layer at the nitride oxide interface was used to store the positive charge which forms the basis for operation of the RADFET. Data is presented which shows hole transport in the thermal oxide. Models explaining the field dependence of the response and the saturation behavior of the dual dielectric device are given. These RADFETs are more stable than any previously described in the literature and have a sensitivity of 86 μV/rad dose at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342887
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  • 14
    Electronic Resource
    Electronic Resource
    Intrusions in the active layer of channeled-substrate-planar laser diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1093-1096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. "Node'' devices from each wafer were angle lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position corresponding to the location of the spike in the active region. In addition, cathodoluminescence measurements on other "node'' diodes revealed a dark line region approximately 2 μm wide running parallel to and in the middle of the 5-μm contact stripe. We believe that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339740
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  • 15
    Electronic Resource
    Electronic Resource
    Thin-film palladium and silver alloys and layers for metal-insulator-semiconductor sensors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1074-1083 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of Ag to Pd in the gate metal of a metal-insulator-semiconductor gas sensing diode can improve the performance and change the selectivity of the sensors for a variety of reactions. Data on the response of diodes with 12 different ratios of Ag to Pd in alloys and layers of Pd and Ag to hydrogen and other gases are reported. Diodes with as much as 32% Ag respond very well to H2 gas and the films are much more durable to high hydrogen exposure than pure Pd films. Improvements in the rate of response and aging behavior are found for certain Ag combinations; others give poorer performance. The presence of Ag on the surface changes the catalytic activity in some cases and examples of H2 mixed with O2 and/or NO2, propylene oxide, ethylene, and formic acid are given. Such selectivity forms the basis for miniature chemical sensor arrays which could analyze complex gas mixtures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339738
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  • 16
    Electronic Resource
    Electronic Resource
    Electromagnetic resonance enhanced photoabsorption in planar metal–oxide–metal tunnel junction detectors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2022-2029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of surface plasmon and guided wave enhanced light absorption in the metal electrodes of planar aluminum–aluminum oxide–silver and aluminum–aluminum oxide–aluminum tunnel junctions. We consider excitation, under conditions of attenuated total reflection, of both the "fast'' and "slow'' surface plasmons of the junction, and of TE and TM guided modes supported by a dielectric film adjoining the junction. We find that 〉97% absorption may be obtained at resonance in a single electrode of a practical device, the thickness of which is only a fraction of the expected photocarrier mean free path, and show how the angular width of the absorption peak may be varied by changing the adjacent dielectric media. We also show how resonant absorption may be used in a biased planar device for the detection of radiation at normal incidence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337999
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  • 17
    Electronic Resource
    Electronic Resource
    Resistive filamentation of self-pinched electron beams (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 577-584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for resistive filamentation of a self-pinched slab electron beam is presented. The lowest-order modes are found to consist of a body mode which leads to bunching of the beam, and a surface mode which leads to rigid rippling of the beam. The dispersion relations for these modes are compared to results from a linearized particle simulation code. The analytic model and simulation code are applied to the interpretation of a recent experiment in which filamentation was observed in a self-pinched annular electron beam propagating in low-pressure air.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337450
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  • 18
    Electronic Resource
    Electronic Resource
    Spin-wave polarization in single domain uranium selenide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3412-3414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin waves in ferromagnetic USe have been measured by inelastic neutron scattering. Previous measurements on a multidomain USe sample show that the spin wave branch has a zone center frequency of ≈9 THz, and that the spin waves are intrinsically broad. New measurements on a single domain sample show that, in addition, the spin wave is unpolarized. This behavior is unlike that of a classical ferromagnet, in which the polarization is transverse, but similar to behavior observed in some singlet ground state systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338763
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  • 19
    Electronic Resource
    Electronic Resource
    Theory of response of radiation sensing field effect transistors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1375-1379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation sensing field effect transistors display a variety of nonlinear and saturating responses to ionizing radiation. A model involving the numerical solutions to the photoconductivity equations is presented which describes the response under a wide range of radiation doses and applied fields. The large, unexpected, response for zero bias demonstrates the importance of diffusion of the photocarriers. The simulations are consistent with the known transport parameters for SiO2, with the main unknowns being the concentration of electron and hole traps. A variety of data at different applied voltages and doses can be fit with the same transport parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336110
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  • 20
    Electronic Resource
    Electronic Resource
    Hydrogen particle diagnostic based on Pd-MOS diode arrays (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1884-1886 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The reverse-bias current through a Pd-MOS diode changes when hydrogen is present at the diode interface and this effect provides the bias for a solid-state detector to monitor the flux and energy of hydrogen particles emanating from a beam or plasma. The addition of a coating atop the Pd forms a high-pass energy filter and an array of coated Pd-MOS diodes can function as a compact, hydrogen-specific, energy spectrometer. The response characteristics of an Au-coated Pd-MOS diode array have been measured using a low-energy hydrogen ion source. The array has several desirable characteristics for energetic hydrogen detection. Its response is dosimetric, it discriminates between hydrogen irradiations at different energies, and it can be regenerated by heating briefly to 100–200 °C. These properties make Pd-MOS diode arrays attractive candidates for remote plasma-edge flux and energy monitors in fusion devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140042
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