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  • American Physical Society  (13)
  • American Institute of Physics (AIP)  (11)
  • Springer Nature  (3)
  • 1985-1989  (27)
  • 1
    Electronic Resource
    Electronic Resource
    High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2028-2030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depletion-mode n-channel metal-oxide-semiconductor field-effect transistors were fabricated on n-type β-SiC (111) thin films epitaxially grown by chemical vapor deposition on the Si (0001) face of 6H α-SiC single crystals. The gate oxide was thermally grown on the SiC; the source and drain were doped n+ by N+ ion implantation at 823 K. Stable saturation and low subthreshold current were achieved at drain voltages exceeding 25 V. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923 K, the highest temperature reported to date for a transistor in any material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98282
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 442-444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-semiconductor field-effect transistors (MESFET's) have been fabricated in an unintentionally doped, n-type β-SiC thin film grown by chemical vapor deposition (CVD). This n-type layer was deposited on a monocrystalline p-type β-SiC (100) CVD layer previously grown on a p-type Si (100) substrate. The buried p layer allowed the devices to be fabricated several microns away from the SiC/Si interface region which contained numerous defects formed as a result of the poor lattice match and different coefficients of thermal expansion between SiC and Si. Thermally evaporated Au was utilized for the gate contact. Sputtered TaSi2 was employed for the source and drain contacts. The gate lengths and channel depths of these MESFET's were 3.5 and 0.60 μm, respectively. Saturation of the drain currents was achieved at room temperature. Furthermore, the current-voltage characteristics, measured from 298 to 623 K for the first time, indicated that these MESFET's performed reasonably well throughout this temperature range. The maximum transconductance obtained was 1.6 mS/mm; the value of this parameter decreased with temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98416
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2168-2177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on β-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (Al) p-type β-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type β-SiC(111) thin films grown on the Si(0001) face of a 6H α-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperature up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341731
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of ion-implanted p-n junction diodes in β-SiC (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 922-929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mesa structure junction diodes prepared via high-temperature ion implantation of Al+ (100 keV, 4.8×1014 Al/cm2) in n-type or N+ (90 and 180 keV, 0.9 and 1.3×1014 N/cm2) in p-type β-SiC thin films were electrically characterized as a function of temperature using current-voltage and capacitance-voltage measurements. In either case, rectification was observed to the highest measurement temperature of 673 K. Closer examination of the device current-voltage characteristics yielded diode ideality factors greater than 2. Additionally, the log dependence of these two parameters indicated space-charge-limited current in the presence of traps as the dominant conduction mechanism. From the temperature dependence of log-log plots, trap energies and densities were determined. Two trapping levels were observed: (1) 0.22 eV with a density of 2×1018 cm−3 and (2) 0.55 eV with a density of 2×1016 cm−3. The former is believed to be ionized Al centers (in the case of Al-implanted sample) and the latter a compensating acceptor level, both of which lie within the bottom third of the band gap. Reverse currents at low biases were characteristic of generation in the depletion region. At intermediate biases an ohmic dependence was observed, whereas at high biases the current appeared to be space-charge limited. Capacitance-voltage measurements indicated both types of diodes were abrupt junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340034
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2011-2016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectroscopy has been used to characterize as-grown and ion-implanted 3C-SiC films grown by chemical vapor deposition on Si(100) substrates. The D1 and D2 defect PL bands reported previously in ion-implanted Lely-grown SiC were also observed in the as-grown chemical vapor deposited films, and the effects of annealing (1300–1800 °C) on these PL bands as observed in as-grown films and films implanted with B, Al, or P have been studied. As reported previously for Lely-grown SiC, the spectral details of the defect PL bands and their annealing characteristics were found to be independent of the particular implanted-ion species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337997
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  • 6
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2672-2679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, monocrystalline 6H-SiC thin films have been epitaxially grown on 6H-SiC {0001} substrates which were prepared 3° off-axis from 〈0001〉 towards 〈112¯0〉 at 1773 K via chemical vapor deposition (CVD). Essentially, no defects were generated from the epilayer/substrate interface as determined by cross-sectional transmission electron microscopy (XTEM). Double positioning boundaries which were observed in β-SiC grown on 6H-SiC substrates were eliminated as confirmed by plan-view TEM. A strong dependence of the surface morphology of the as-grown thin films on the tilting orientation of the substrates was observed and reasons for this phenomenon are discussed. The unintentionally doped 6H-SiC thin films always exhibit n-type conduction with a carrier concentration on the order of 1016 cm−3. Au-6H-SiC Schottky barrier diodes were fabricated on the CVD 6H-SiC thin films and it was found that the leakage current at a reverse bias of 55 V was only 3.2×10−5 A/cm2. This is compared to SiC films grown on other substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341608
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  • 7
    Electronic Resource
    Electronic Resource
    Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2897-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the Si/(Si+C) ratio in the reaction gas stream on the growth and properties of monocrystalline β-SiC films grown on Si(100) substrates via chemical vapor deposition have been theoretically and experimentally studied. The amounts of condensed phases of β-SiC and Si, and the partial pressures of the remaining Si and C-containing gases as a function of the Si/(Si+C) ratio in the source gases have been initially obtained from thermodynamic calculations using the "solgasmix-pv'' computer program. Complementary and comparative experimental growth studies have shown that inclusion-free films having maximum values in growth rate and carrier concentration and a minimum value of resistivity were obtained near Si/(Si+C)=0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337075
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  • 8
    Electronic Resource
    Electronic Resource
    Monocrystal elastic constants of NbC (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1614-1617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ultrasonic methods at ambient temperatures, for niobium carbide we determined the monocrystalline elastic stiffnesses: C11, C12, and C44 in Voigt's contracted notation. From these, we calculated the quasi-isotropic (polycrystalline) elastic constants and the elastic Debye characteristic temperature. Results derived from a Blackman diagram suggest that ionic forces contribute significantly to the elastic constants and to interatomic bonding. This conclusion applies not only to NbC but also to other MX carbides with an NaCl-type crystal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337249
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  • 9
    Electronic Resource
    Electronic Resource
    Coercivity, structure, and stoichiometry of Permalloy/alumina multilayers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4192-4194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of permalloy/alumina multilayers were examined to determine their structure, composition, and magnetic performance. The conditions of permalloy and alumina-layer thickness, and substrate bias necessary to minimize the coercivity have been shown. Multilayer structures with alumina-layer thicknesses of less than 100 A(ring) and permalloy-layer thicknesses between 400 and 500 A(ring) had the lowest coercivities. Structures were examined by RBS, TEM, AES, and XRD to study the effect of bias sputtering on the structure and composition of the multilayers. It was found that sputtering multilayers at high biases did not affect the coercivity, but did cause significant physical and chemical changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334608
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  • 10
    Electronic Resource
    Electronic Resource
    Impact of some process variations on NiFe thin films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4195-4197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) are used to detect changes in stoichiometry and impurity incorporation in thin, rf diode sputtered NiFe films as a function of processing variations. Comparisons are made to thin, evaporated NiFe films with respect to oxygen reactivity. Because Ni and Fe are close in atomic weight, RBS, using 2-MeV He incident ions, cannot resolve them. However, by increasing the He incident energy to 4.7 MeV, the (26)Fe(56) and (28)Ni(58) isotopes are resolvable in films thinner than about 250 A(ring) and the actual NiFe thin-film stoichiometry can be calculated. Complementary AES depth profiling measurements indicate Fe enrichment by approximately 5 wt. % as the deposition substrate bias is increased from 0 to −200 V. Magnetic characterization shows a corresponding increase in easy-axis coercivity of more than a factor of 10. Other magnetic parameters are also adversely affected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334609
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