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  • Elsevier  (88)
  • Oxford University Press  (23)
  • American Institute of Physics (AIP)  (10)
  • American Physical Society  (5)
  • 1985-1989  (126)
Collection
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 736-738 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin nitrided oxides (8 nm) were reoxidized for the first time by lamp-heated rapid thermal annealing in dry oxygen at 900–1150 °C for 15–200 s. Extensive measurements of hydrogen concentration [H] using secondary ion mass spectroscopy were performed. Electron trapping was monitored by flatband voltage shift ΔVfb under high-field stress. Both [H] and the ΔVfb decrease monotonically as reoxidation proceeds in the present experimental conditions. We have found for the first time that the ΔVfb is correlated with the [H] by a single proportional relation regardless of the fabrication condition. This fact gives evidence that the electron traps in the (reoxidized) nitrided-oxide system originate from hydrogen-containing species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99364
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamic response of crystalline solids with microcavities (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 856-863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on an approximate method by the authors for calculating void deformation in crystalline solids, the global response of a small continuum material element which contains microcavities is studied. A rate-dependent power-law plastic flow by double-slip is assumed to govern the local inelastic deformation. The local field variables are analytically calculated in an incremental manner. The average stress and strain are then computed by the integration of the local stress and strain over the continuum element. These average variables are used to describe the overall response of the material element under high loading rates. Several illustrative examples are given. It is shown that the global response of the material is significantly affected by the loading rate: the material response becomes tougher as the loading rate increases, but once the entire matrix becomes plastic, a strong ductility develops. It is observed that the large overall plastic deformation of crystalline solids stems not only from a uniform plastic flow in the entire matrix but also from the slip caused by the stress concentration near cavities; even under all-around uniform compression or tension, significant plastic deformations can take place in the vicinity of preexisting cavities, and affect the overall response of the material. The global material response, in general, is anisotropic, being induced by local flow on geometric slip systems. In addition, it is shown that the overall material response under compression is not, in general, the reverse of that under tension. The overall failure of crystalline solids, caused by void collapse or void growth, is investigated under compressive and tensile loads applied at various rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341937
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of device parameters on bistable semiconductor laser (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 534-537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of device parameters on static and dynamic properties of inhomogeneously current-injected bistable semiconductor lasers has been analyzed. It is shown that in addition to the fraction of current injection region in the cavity, the device parameters, such as dopant concentration in active layer, facet reflectivity, and cavity length, affect the hysteresis width and threshold current. The mechanism of transition between lasing and nonlasing states is discussed, in which a new interpretation is given about the bias dependence of switch-on delay time and the driving condition for switching off is clarified. The carrier increasing rates due to the bias current and dopant concentration in the active layer are dominant factors for the switching on and switching off, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337443
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  • 4
    Electronic Resource
    Electronic Resource
    Compositional study of ultrathin rapidly reoxidized nitrided oxides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 629-635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin nitrided oxides (7.7 nm) were reoxidized for the first time by lamp-heated rapid thermal annealing in O2 at 900–1150 °C for 15–600 s. Compositions and residual hydrogen contents in various reoxidized nitrided oxides were studied by Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS), respectively. AES analyses show that as reoxidation proceeds, the nitrogen concentration peak near the outer surface decreases rapidly, while that near the Si-SiO2 interface [N]int decreases very slowly. It is newly found that the nitrogen-rich layer near the Si-SiO2 interface moves further into the substrate as reoxidation proceeds, following a movement similar to that of the Si-SiO2 interface. As the starting nitrogen content is lowered or the reoxidation temperature is raised, the distance of the peak movement ΔdAES and the reduction of [N]int are larger. The ΔdAES is found in quantitatively good agreement with the increase of film thickness evaluated by capacitance-voltage measurements. The movements are due to the diffusion-limited interfacial oxidation. In contrast to reoxidation, annealing in N2 of nitrided oxides scarcely reduces the [N]int and does not increase ΔdAES. SIMS analyses show that as reoxidation proceeds, hydrogen concentration [H] in the film decreases monotonically. As the starting nitrogen content is lowered or the reoxidation temperature is raised, [H] decreases more rapidly. Electron trapping was monitored by flat-band voltage shift ΔVFB under high-field stress, and ΔVFB is found to decrease with the reduction of [H] following a proportional relation regardless of the fabrication condition. [H] is also reduced by annealing in N2 and the reduction is comparable to that by reoxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343095
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  • 5
    Electronic Resource
    Electronic Resource
    Void collapse and void growth in crystalline solids (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2746-2757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of large deformation and eventual collapse (or growth to a final shape, depending on the microstructure and loading) of voids in a crystalline solid which undergoes plastic flow by slip on crystallographic planes is considered and solved analytically for plane problems, using certain reasonable simplifying assumptions. It is shown that because of local anisotropic plastic flow, an initially circular (in two dimensions or spherical in three dimensions) void quickly deforms into a noncircular (or nonspherical) shape, even under all-around uniform far-field pressure or tension. Using an incremental solution, the shape of the void at each loading stage is approximated by an equivalent ellipse, and this procedure is continued until either the void collapses into a crack (which occurs always under compression and in special cases even under tension) or attains a constant aspect ratio (under tension only). The residual stresses in the vicinity of the collapsing void are calculated and used to establish whether or not the crack which is formed by the void collapse will continue to grow upon the release of the overall uniform compressive loads. It is shown that this depends on the initial void size, on the ductility of the material, as well as on the rate of the loading which affects the ductility. The mechanism of possible overall failure caused by void collapse under far-field compressive loads and possible subsequent crack growth upon unloading is studied, using power-law rate-dependent plastic slip and experimental results on flow stress under shock loading. Results are compared with experimental observations, arriving at good agreement. In particular, the important effect of the loading rate on void collapse and subsequent failure mode is illustrated. Furthermore, the void growth processes under simple shear and tensile loading are investigated, and it is shown that, depending on the far-field loading condition and the microstructure, a void may grow by self-similar expansion or it may collapse into a crack. The mechanisms of void deformation under various loading conditions are illustrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339402
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  • 6
    Electronic Resource
    Electronic Resource
    Donor-cation vacancy complex in Si-doped AlGaAs grown by metalorganic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4603-4605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The donor-cation vacancy complex in Si-doped AlGaAs grown by metalorganic chemical vapor deposition has been identified by examining the growth-condition dependence of photoluminescence (PL) spectra. It has been revealed that the complex has the same origin as the self-activated center in GaAs, and is relevant to the degradation of crystal quality for high doping and high V/III ratio conditions. The excitation intensity dependence of PL spectra, and the fact that the emission is not observed for the samples with indirect gaps, suggest that the emission is a band-to-acceptor transition. The temperature dependence of the emission intensity and linewidth are compared with GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338369
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  • 7
    Electronic Resource
    Electronic Resource
    Mode-transition characteristics and tunability of an AlGaAs laser (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2231-2237 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wavelength characteristics of a transverse-junction-stripe AlGaAs laser were precisely measured for a wide range of diode temperatures and injection currents. A very simple rule was found in the mode transition characteristics. Typical features of mode competition, such as mode-competition noise, mode hopping with and without hysteresis phenomenon, and a tristable state of the lasing wavelength, were successively observed for a single diode sample. The characteristics were analyzed theoretically by using a two-mode intensity equation of laser oscillation under the assumption of a homogeneously broadened gain spectrum. The results were in good agreement with the experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337182
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  • 8
    Electronic Resource
    Electronic Resource
    Differences in quality of PF ring vacuum between positron and electron storage mode : International conference on synchrotron radiation instrumentation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1728-1731 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Electrons or positrons were stored in the electron storage ring of the Photon Factory (PF). The vacuum of the PF was so good that differences in the instantaneous beam lifetimes between electron and positron storage modes were very slight. Abnormal decrements of the stored beam current observed in the electron storage mode did not appear in the positron storage mode. Thus, the decay curves of the beam current in the positron storage mode were smoother than those in the electron storage mode. Though the instantaneous beam lifetime was nearly the same in storage modes, the practical beam lifetime of a positron was about 10% longer than that of an electron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140940
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  • 9
    Electronic Resource
    Electronic Resource
    Long-term stability of a one-dimensional current-driven double layer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 31 (1988), S. 2135-2143 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long-term (〉an electron transit time over the system) stability of a one-dimensional current-driven double layer is studied by numerical experiments using particles. In these experiments, the potential difference across the system is self-consistently determined by the space charge distributions inside the system. Each boundary of the system supplies a nondrifting half-Maxwellian plasma. The current density is increased by increasing the number density of the source plasma at the injection (right) boundary. A double layer can be developed by injection of a sufficiently high current density. For a fixed level of current injection, plasmas carrying no current with various densities (n ˆ0) are loaded on the left side of the system. Whether or not the generated double layer can maintain its potential drop for a long period depends on the density (n ˆ0) relative to the initial density (n@B|0) near the injection boundary: (1) the double layer is found to grow when n ˆ0=n*0; (2) the steady double layer is seen for a long period when n ˆ0(approximately-greater-than)n@B|0; (3) the double layer is found to decay when n ˆ0 is even higher than n*0. A new concept of the current polarizability Pc=J/n# is introduced for understanding these results, where J is the current density flowing through the double layer and n# is the plasma density at the injection front, i.e., the low-potential edge of the double layer. Here Pc represents the potential of negatively polarizing a plasma. The different long-term features of the double layers in results 1–3 above can be explained by analyzing physical processes to control the current polarizability Pc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866613
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  • 10
    Electronic Resource
    Electronic Resource
    Morphology of dynamic electron transfer characteristic of chemical reaction dynamics (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 6334-6343 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The morphology of the dynamic electron transfer characteristic of chemical reaction dynamics has been studied by introducing the new criterion of an isomorphism of the manifold of electron orbitals at the different points of the reaction coordinate. This criterion is a natural development of the famous Amos–Hall corresponding orbital. Natural orbitals are obtained from the dynamic Fock equation, then it is possible to describe the electronic process of a chemical reaction by the way that the occupation number of an electron orbital changes within the electron orbital manifold which is constructed to have isomorphic equivalency along the reaction coordinate. The electronic process accompanying the chemical reaction CH3+HF → CH4+F has been studied as a demonstration of the present theory. The electron orbital which is transformed by the new criterion is strongly localized, though the transformation operator itself does not contain any explicit localization terms, such as self-energy integrals. The transition of the occupation number inherent to the spatially clamped orbital is clearly demonstrated, and gives a new interpretation of the electronic process of the reaction mechanism. This has also been analyzed in the light of the dynamic electron transfer and dynamic spin transfer characteristic of a chemical reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449860
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