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  • Springer  (229)
  • American Institute of Physics (AIP)  (31)
  • National Academy of Sciences  (13)
  • Geological Society of London  (7)
  • American Association for the Advancement of Science (AAAS)
  • 1985-1989  (286)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Entomologia experimentalis et applicata 49 (1988), S. 75-82 
    ISSN: 1570-7458
    Keywords: aphid-resistance ; lucerne ; alfalfa ; Medicago sativa ; spotted alfalfa aphid ; Therioaphis trifolii f. maculata ; antibiosis ; bioassay
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract In autumn 1981 there were widespread reports of a reduced level of antibiosis in lucerne crops and field trials where cultivars selected for resistance to the aphid, Therioaphis trifolii f. maculata, had been used. On our field trial, the plot of ‘CUF 101’ lucerne was infested to a level about 40% of that on the aphid-susceptible ‘Hunter River’, compared with an average of about 3% over the two years before and the two years after. An experimental study of possible causes using a bioassay technique on cloned plants representing the spectrum of resistance in CUF 101 indicated that loss of resistance was temporary and occurred apparently randomly among the tests, but that certain treatments increase the frequency of its occurrence. Lowered temperatures and the use of either young regrowth or senescent lucerne, each increased the frequency of loss of resistance. Inundation of lucerne by large numbers of aphids did not affect the expression of resistance directly, but the few progeny that survived to adulthood on partly-resistance lucerne were habituated and were then able to interact with the plants to increase the apparent frequency of breakdown of resistance. Plants which showed the loss of resistance developed aphid populations between 4x ad 25x those when they expressed their normal resistance level. Investigations suggest that the situation in autumn 1981 may have been the result of a prolonged and massive immigration of aphids into lucerne crops, which, on the aphid resistant cultivars allowed surviving aphids to exploit maximally the combined effects of factors causing some loss of resistance.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Entomologia experimentalis et applicata 44 (1987), S. 177-185 
    ISSN: 1570-7458
    Keywords: spotted alfalfa aphid ; Therioaphis trifolii ; aphid-resistant plants ; lucerne = alfalfa ; Medicago sativa ; variation ; bioassay ; antibiosis non-preference ; inter-plant movement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Description / Table of Contents: Résumé L'étude de la multiplication initiale des effectifs de T. trifolii, élevés au laboratoire sur pousses de différents pieds de luzerne, a servi de test d'antibiose pour les cultures en plein champ. La distribution de l'antibiose, dans des échantillons importants de plantes appartenant à des cultivars sélectionnés pour leur résistance aux pucerons, a présenté une forme en J, c'est-à-dire que la majorité des plantes était très résistante, quelques unes apparemment sensibles, et un certain nombre intermédiaires entre ces deux extrêmes. Pour un niveau donné d'antibiose, la reproduction, la mortalité et ainsi la distribution initiale en âges dans les populations de pucerons ont été généralement identiques. La multiplication végétative de plantes présentant un gradient de résistance à l'intérieur d'un cultivar et l'utilisation d'un plan de distribution des boutures ont permis l'étude de ce qui semble être l'effet de l'hétérogénéité spatiale sur la résistance des cultures aux attaques de pucerons. La simulation d'une invasion de la culture par les pucerons en plaçant des adulte sur toutes les boutures d'un rang ne pouvait donner une explication de la croissance de la population que si les pucerons se déplacaient le long du rang pour découvrir et exploiter les pieds les plus sensibles. Une distribution par taches, comme on peut l'envisager dans un champ, ne devrait pas gêner les pucerons, car bien que les mouvements d'évasion soient stimulés par les niveaux de résistance élevés (de non-préférence), on peut en déduire que les pucerons se déplaceront sur des plantes très résistantes, eventuellement pour atteindre des plantes moins résistantes placées derriere.
    Notes: Abstract Initial population growth of spotted alfalfa aphid reared on shoots cut from individual lucerne plants, was tested and used as a realistic bioassay of antibiosis. Within cultivars selected for aphid-resistance there was a J-shaped distribution of antibiosis between plants of the crop, the majority being highly resistant, a few apparently susceptible and a proportion partly-resistant. For a given level of antibiosis, reproduction, mortality and thus initial age distribution of aphid populations were generally similar. Vegetative cloning of plants from the range of resistance available in a cultivar has allowed studies of the likely effect of spatial variation of resistance in crops on aphid infestations, using experimental arrays of cut shoots. Simulation of aphid invasion of crops by the placement of adults on all shoots of an array gave results explicable only if the aphids moved through the array to find and breed on the more susceptible plants. A patchy arrangement of these, as might be expected in a field crop, would not hinder the aphids, for although movement off a plant is stimulated by higher resistance (non-preference) levels, it was inferred that aphids will move onto higher resistance plants, eventually to reach lower resistance plants beyond.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Behavioral ecology and sociobiology 17 (1985), S. 385-387 
    ISSN: 1432-0762
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Adult female whitespotted sawyers Monochamus scutellatus (Coleoptera: Cerambycidae) were placed on succeeding days with two males differing visibly in size. Females showed a significant preference for the larger of two males. The rate of oviposition was significantly higher when the female was paired with the larger male. Both the rate of movement by the paired female and her rate of indicating non-receptivity were significantly lower when the female was paired with the larger male. This species exhibits resource defense polygyny, and females appear to choose mates mainly on the basis of the quality of resources defended. This study suggests, however, that when resource quality is constant, females choose mates on the basis of their size.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2282-2288 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In technical materials a critical step leading to complete macroscopic failure is not the nucleation of cracks in isolated grains, but instead the transmission of rupture from grain to grain until the entire cross section is traversed. It is difficult, in general, to employ the usual microscopic observations which could provide the keys to a comprehensive mechanistic understanding of this problem. It is shown herein that monochromatic synchrotron radiation can be used to provide Bragg angular contour maps in a rapid and precise manner. These maps enable one to quantify the local strain field tensor associated with crack nucleation and propagation through a grain boundary. Based on this analysis it is then a straightforward process to determine the other mathematical properties usually associated with second rank tensors which lead to assessment of critical parameters for crack transmission at the boundary. The application of this analytical technique is experimentally demonstrated by studies of crack formation at grain boundaries in zinc bicrystals.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1972-1976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new design for radiation-sensing field-effect transistors (RADFETs) is presented, involving the use of very thick silicon nitride layers deposited on top of a high-quality thermal silicon dioxide. In contrast to previous RADFET fabrication procedures, no attempt was made to introduce hole traps into the thermal oxide. Instead the trapping layer at the nitride oxide interface was used to store the positive charge which forms the basis for operation of the RADFET. Data is presented which shows hole transport in the thermal oxide. Models explaining the field dependence of the response and the saturation behavior of the dual dielectric device are given. These RADFETs are more stable than any previously described in the literature and have a sensitivity of 86 μV/rad dose at room temperature.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6839-6844 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been discovered that palladium-gated metal-insulator-silicon Schottky barrier diodes are very sensitive to fluxes of energetic protons in high vacuum. Data on the dosimetric response of the diodes to energetic protons are presented, along with data on the subsequent decay in the induced signal. A model for the response is developed, based on the response of similar structures to partial pressures of molecular hydrogen. The model involves adsorption sites at both the external Pd surface and the interface between Pd and SiO2, as well as known H absorption properties of bulk Pd. The sensitivity at 300 K of our diodes is about 109 protons (1011 cm−2). The inventory of protons stored in the bulk Pd, the surface, and at the interface indicates that the areal site density for the surface and interface is about 1015 cm−2.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1074-1083 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of Ag to Pd in the gate metal of a metal-insulator-semiconductor gas sensing diode can improve the performance and change the selectivity of the sensors for a variety of reactions. Data on the response of diodes with 12 different ratios of Ag to Pd in alloys and layers of Pd and Ag to hydrogen and other gases are reported. Diodes with as much as 32% Ag respond very well to H2 gas and the films are much more durable to high hydrogen exposure than pure Pd films. Improvements in the rate of response and aging behavior are found for certain Ag combinations; others give poorer performance. The presence of Ag on the surface changes the catalytic activity in some cases and examples of H2 mixed with O2 and/or NO2, propylene oxide, ethylene, and formic acid are given. Such selectivity forms the basis for miniature chemical sensor arrays which could analyze complex gas mixtures.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2022-2029 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of surface plasmon and guided wave enhanced light absorption in the metal electrodes of planar aluminum–aluminum oxide–silver and aluminum–aluminum oxide–aluminum tunnel junctions. We consider excitation, under conditions of attenuated total reflection, of both the "fast'' and "slow'' surface plasmons of the junction, and of TE and TM guided modes supported by a dielectric film adjoining the junction. We find that 〉97% absorption may be obtained at resonance in a single electrode of a practical device, the thickness of which is only a fraction of the expected photocarrier mean free path, and show how the angular width of the absorption peak may be varied by changing the adjacent dielectric media. We also show how resonant absorption may be used in a biased planar device for the detection of radiation at normal incidence.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1093-1096 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. "Node'' devices from each wafer were angle lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position corresponding to the location of the spike in the active region. In addition, cathodoluminescence measurements on other "node'' diodes revealed a dark line region approximately 2 μm wide running parallel to and in the middle of the 5-μm contact stripe. We believe that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1216-1217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation sensing field-effect transistors operated at zero bias show a low-dose response that is roughly linear in the thickness of the gate oxide. The same devices show a thickness squared dependence if a bias is applied during the irradiation. This effect can be explained by examining the effect of diffusion and electron trapping on the buildup of net positive charge in the gate oxide.
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