Publikationsdatum:
2019-07-13
Beschreibung:
A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.
Schlagwort(e):
ELECTRONICS AND ELECTRICAL ENGINEERING
Materialart:
Laser Diode Technology and Applications Meeting; Jan 18, 1989 - Jan 20, 1989; Los Angeles, CA; United States
Format:
text
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