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  • 1
    Electronic Resource
    Electronic Resource
    Electron attachment rate constants of HBr, CH3Br, and C2H5Br in N2 and Ar (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4905-4910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron attachment rate constants of bromine compounds in the buffer gases of N2 and Ar (∼250 Torr) were measured as a function of E/N (or mean electron energy). The measured electron attachment rate constants of HBr, CH3Br, and C2H5Br show maximum values of 1.05×10−9, 1.08×10−11, and 9.3×10−11 cm3/s at mean electron energies of 0.55, 0.4, and 0.8 eV, respectively. The electron drift velocities for the gas mixtures of CH3Br in N2 and Ar were also measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340431
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  • 2
    Electronic Resource
    Electronic Resource
    Orientation dependence of valence-subband structures in GaAs-Ga1−xAlxAs quantum-well structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4609-4613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Valence-subband structures of GaAs-Ga1−xAlxAs quantum wells growth in the [001], [111], and [110] directions are calculated based on the bond-orbital model. The effective mass for the first subband in (111)-oriented quantum wells is found to be substantially smaller than that in (001)-oriented quantum wells for well widths narrower than 70 A(ring). The subband structures of (110)-oriented quantum wells display large anisotropy, with effective masses along two different in-plane directions ([001] and [11¯0]) differing by almost one order of magnitude. It is also found that the Al composition has a strong effect on the hole effective mass. Implications of our results in device applications are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342466
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  • 3
    Electronic Resource
    Electronic Resource
    Attachment of low-energy electrons to HCl (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1625-1631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-attachment rate constants of HCl diluted in Ar and N2 were measured as a function of the reduced electric field E/N. These data were converted to the electron-attachment cross section of HCl using the electron-energy distribution functions of pure Ar and N2. The dependence of the electron-attachment rate constant and the mean electron energy on the fraction of HCl in each buffer gas was investigated. A comparison of the current result with both available experimental data and theoretical calculations is made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341810
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 743-748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Si in high-purity lightly Si-doped GaAs grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular-beam epitaxy has been studied. Photothermal ionization spectroscopy shows that Si is incorporated predominantly as a donor for growth on (100) and (311)B substrates, whereas low-temperature photoluminescence shows that Si is incorporated predominantly as an acceptor for growth on a (311)A substrate. Spectroscopic and Hall-effect measurements show that the dominance of Si donors in the samples grown on the (100) and (311)B substrates renders these samples n-type while the dominance of Si acceptors in the sample grown on the (311)A substrate renders that sample p-type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340066
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  • 5
    Electronic Resource
    Electronic Resource
    High-purity GaAs grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 937-939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown high-purity GaAs on (100), (311)A, and (311)B orientations by molecular-beam epitaxy (MBE). While undoped GaAs grown on (100) and (311)A are typically p type, growth on (311)B orientation has yielded n type with a liquid-nitrogen electron mobility of 1.3×105 cm2 V−1 s−1, which is among the highest mobilities reported for MBE-grown materials. Low-temperature photoluminescence showed well-resolved impurity bound exciton peaks consistent with electrical results. The possible incorporations of impurities, especially carbon, are discussed. Our work demonstrates that the previously reported undoped p-type GaAs(100) are compensated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336566
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  • 6
    Electronic Resource
    Electronic Resource
    High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1834-1835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V−1 s−1 at a density of 1×1011 cm−2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337227
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  • 7
    Electronic Resource
    Electronic Resource
    Two-photon-ionization coefficients of CS2, SO2, and (CH3)3N (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3295-3301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrons produced by two-photon ionization of CS2, SO2, and (CH3)3N in N2 and CH4 buffer gases at 193 nm were investigated using a parallel-plate drift-tube apparatus. At a low charge density, the transient voltage induced by electron motion between the electrodes is proportional to the gas pressure and the square of laser power. The two-photon-ionization coefficients measured from the number of electrons produced are 3.3×10−27, 8.3×10−30, and 1.7×10−27 cm4/W for CS2, SO2, and (CH3)3N, respectively. The coefficient for (CH3)3N agrees with the earlier value measured by ion current. At a high charge density, the number of electrons observed deviates from the square dependence of laser power. The numbers of ions and electrons are greatly reduced by charge recombination whose reaction rate is enhanced in the presence of space charge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335789
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  • 8
    Electronic Resource
    Electronic Resource
    On the long-range order in AlGaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3244-3245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A charge transfer dipole stabilization model is proposed to explain the recently observed long-range order in AlGaAs alloys. The connection between the large valence band offset of AlAs/GaAs and AlGaAs alloy ordering is pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335805
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  • 9
    Electronic Resource
    Electronic Resource
    Shortening of electron conduction pulses by electron attacher C3F8 in Ar, N2, and CH4 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 184-187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The attachment rate constants of C3F8 in the buffer gases of Ar, N2, and CH4 are measured using a parallel-plate drift-tube apparatus. The dependences of the electron drift velocities on the contents of C3F8 in various buffer gases are investigated. Electrons are produced by irradiating the cathode with ArF laser photons. The transient voltage pulses induced by the electron motion are observed. We find that the C3F8-CH4 mixture has the desirable characteristics of both electron drift velocity and attachment rate constant for the application of diffuse-discharge opening switches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335705
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  • 10
    Electronic Resource
    Electronic Resource
    Electron attachment rate constants of SOCl2 in Ar, N2, and CH4 (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 6470-6474 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electron attachment rate constants of SOCl2 in the buffer gases of Ar, N2, and CH4 (150 to 500 Torr) at various E/N (1–15 Td) were measured by a parallel-plate drift-tube electron-swarm technique. Electrons were produced by irradiating the cathode with KrF laser photons. For the SOCl2–Ar mixture, the electron attachment rate constant has a maximum value of 6.2×10−10 cm3/s at E/N=4 Td. For SOCl2 in N2, the electron attachment rate constant is 1.25×10−9 cm3/s at E/N=1.3 Td, and decreases with increasing E/N. For SOCl2 in CH4, the electron attachment rate constant is 4.8×10−9 cm3/s at E/N=1 Td, and decreases with increasing E/N. For every gas mixture studied, the electron attachment rate constant is independent of buffer gas pressure, indicating that the electron attachment to SOCl2 is due to a dissociative process. The electron attachment processes in the studied gas mixtures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451427
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