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  • 1
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    Voltage-dependent calcium channels from Paramecium cilia incorporated into planar lipid bilayers (1984)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1984-07-27
    Description: Two different divalent cation-selective channels from Paramecium cilia were incorporated into planar lipid bilayers. Both channels were much more permeable to divalent than univalent cations, and one of them discriminated significantly among the divalent cations. The selectivity and voltage dependence of the latter channel are comparable to those of voltage-dependent calcium channels found in a variety of cells. A combined biochemical, biophysical, and genetic study of calcium channels is now possible.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ehrlich, B E -- Finkelstein, A -- Forte, M -- Kung, C -- GM 22714/GM/NIGMS NIH HHS/ -- GM 29210/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 1984 Jul 27;225(4660):427-8.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/6330895" target="_blank"〉PubMed〈/a〉
    Keywords: Barium/metabolism ; Calcium/*metabolism ; Chlorides/metabolism ; Cilia/*metabolism ; Electrophysiology ; Ion Channels/*metabolism/physiology ; Lipid Bilayers/*metabolism ; Magnesium/metabolism ; Paramecium/*metabolism ; Potassium/metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Are ions involved in the gating of calcium channels? (1982)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1982-10-08
    Description: The rates of activation and deactivation of the currents carried by calcium, strontium, or barium ions through the voltage-sensitive calcium channel of Paramecium are different. The differences cannot be attributed to complications due to internal ion concentration, calcium channel inactivation, potassium current activation, surface charge effects, or incomplete space clamping. The findings indicate participation of the divalent cations in the voltage-driven calcium channel gating process.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Saimi, Y -- Kung, C -- GM22714/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 1982 Oct 8;218(4568):153-6.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/6289432" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Barium/metabolism ; Calcium/*metabolism ; Cell Membrane/physiopathology ; Ion Channels/*metabolism ; Kinetics ; Membrane Potentials ; Paramecium/*physiology ; Strontium/metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
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    A mechanosensitive ion channel in the yeast plasma membrane (1988)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1988-11-04
    Description: Mechanosensitive ion channels use mechanical energy to gate the dissipation of electrochemical gradients across cell membranes. This function is fundamental to physiological processes such as hearing and touch. In electrophysiological studies of ion channels in the plasma membrane of the yeast Saccharomyces cerevisiae, channels were observed that were activated by, and adapted to, stretching of the membrane. Adaptation of channel activity to mechanical stimuli was voltage-dependent. Because these mechanosensitive channels pass both cations and anions, they may play a role in turgor regulation in this walled organism.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Gustin, M C -- Zhou, X L -- Martinac, B -- Kung, C -- GM37925/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 1988 Nov 4;242(4879):762-5.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratory of Molecular Biology, University of Wisconsin, Madison 53706.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/2460920" target="_blank"〉PubMed〈/a〉
    Keywords: Adaptation, Physiological ; Anions/physiology ; Cations/physiology ; Cell Membrane/*physiology ; Cell Membrane Permeability ; Hydrostatic Pressure ; Ion Channels/*physiology ; Membrane Potentials ; Saccharomyces cerevisiae/*physiology ; Surface Tension ; Water-Electrolyte Balance
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
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    Restoration by calmodulin of a Ca2+-dependent K+ current missing in a mutant of Paramecium (1986)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1986-04-25
    Description: A combination of genetics, biochemistry, and biophysics was used to show that calmodulin is involved in the regulation of an ion channel. Calmodulin restored the Ca2+-dependent K+ current in pantophobiac, a mutant in Paramecium that lacks this current. The restoration of the current occurred within 2 hours after the injection of 1 picogram of wild-type calmodulin into the mutant. The current remained for approximately 30 hours before the mutant phenotype returned. The injection of calmodulin isolated from pantophobiac had no effect. These results imply that calmodulin is required for the function or regulation of the Ca2+-dependent K+ current in Paramecium.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Hinrichsen, R D -- Burgess-Cassler, A -- Soltvedt, B C -- Hennessey, T -- Kung, C -- 1 F 32 NS 07502-01/NS/NINDS NIH HHS/ -- GM 22714/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 1986 Apr 25;232(4749):503-6.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/2421410" target="_blank"〉PubMed〈/a〉
    Keywords: Calcium/physiology ; Calmodulin/*pharmacology ; Dictyostelium/metabolism ; Ion Channels/*drug effects/physiology ; Mutation ; Paramecium/drug effects/genetics/*metabolism ; Potassium/*metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 5
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    Ion channels in yeast (1986)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1986-09-12
    Description: Voltage-dependent ion channels have been found in the plasma membrane of the yeast Saccharomyces cerevisiae. Ion channel activities were recorded from spheroplasts or patches of plasma membrane with the patch-clamp technique. The most prominent activities came from a set of potassium channels with the properties of activation by positive but not negative voltages, high selectivity for potassium over sodium ion, unit conductance of 20 picosiemens, inhibition by tetraethylammonium or barium ions, and bursting kinetics.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Gustin, M C -- Martinac, B -- Saimi, Y -- Culbertson, M R -- Kung, C -- GM-22714/GM/NIGMS NIH HHS/ -- GM-26217/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 1986 Sep 12;233(4769):1195-7.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/2426783" target="_blank"〉PubMed〈/a〉
    Keywords: Cell Membrane/physiology ; Electrophysiology ; Ion Channels/*physiology ; Membrane Potentials ; Potassium/metabolism ; Saccharomyces cerevisiae/*physiology ; Sodium/metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of oxygen precipitates on silicon resistivity in the 650 °C range (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2817-2821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new kinetic model is proposed to explain the resistivity shift phenomenon at annealing temperatures of around 550–800 °C. In this model, thermal donor generation and acceptor annihilation both contribute to the resistivity shift, but the latter contributes most. The rodlike defect which can only grow at temperatures below 800 °C is speculated to act as a gettering center for the acceptors. This model is used to explain the most salient features of "new donor'' activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337873
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 917-931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results of an oxygen precipitation study carried out using Czochralski silicon wafers. A two-step anneal scheme was employed: a lower-temperature step (at 650 or 750 °C for 0–128 h) for SiO2 precipitate nucleation and a higher temperature step (at 1050 °C for 0–64 h) for growth. The oxygen precipitation rate is monitored by measuring the interstitial oxygen (Oi) concentration in the silicon lattice. We have found that (i) a precipitation retardation phenomenon exists for wafers that received prolonged nucleation annealing treatment (from 2 to 16 h), and (ii) this retardation phenomenon gives way to a precipitation recovery phenomenon for wafers that received still longer nucleation annealing treatment (for 8–128 h). We also describe a nuclei dissolution model to explain the retardation/recovery phenomena. The dissolution proceeds against an Oi supersaturation which would normally drive the nuclei into growth.The most important aspects of the model are (i) the dissolution occurs at the onset of the high-temperature growth anneal step, (ii) the factor directly opposing the Oi supersaturation and leading to the nuclei dissolution process is attributed to a large supersaturation of silicon self-interstitials (I supersaturation), essentially also generated at the onset of the growth anneal step, (iii) the generation of the I supersaturation is associated with a nuclei/precipitate polymorph change again occurring at the onset of the growth anneal step. The fundamental physical cause leading to these phenomena is the exigent-accommodation volume (or exigent volume) associated with precipitate growth. This model can explain the present results and is consistent with many other experimental results. We then examine the relevance of the exigent-volume factor with nucleation issues such as its effect on ramping, the effect of carbon, the existence of multiple polymorphs of SiO2, multiple nucleation paths, and a nucleation incubation phenomenon. We believe contributions of the exigent-volume factor to the nucleation phenomena generally exist.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336564
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  • 8
    Electronic Resource
    Electronic Resource
    Behavioral Genetics of Paramecium (1987)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 21 (1987), S. 47-65 
    Details
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ge.21.120187.000403
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  • 9
    Electronic Resource
    Electronic Resource
    The Physiological Basis of Taxes in Paramecium (1982)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physiology 44 (1982), S. 519-534 
    Details
    ISSN: 0066-4278
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ph.44.030182.002511
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  • 10
    Electronic Resource
    Electronic Resource
    A mutation that increases a novel calcium-activated potassium conductance ofParamecium tetraurelia (1986)
    Springer
    The journal of membrane biology 91 (1986), S. 173-181 
    Details
    ISSN: 1432-1424
    Keywords: mutation ; Paramecium ; calcium-activated potassium conductance ; neurogenetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary Under two-electrode voltage clamp, a mutant ofP. tetraurelia, restless (rst/rst), showed a large increase in induced current and an outward tail current when compared to the wildtype cell for hyperpolarizing voltage steps. An increase in the induced and tail currents is also observed for depolarizing voltage steps. The larger current during voltage steps and tail in the mutant were eliminated by the use of CsCl-filled electrodes and tetraethylammonium ion (TEA+) in the bath solution, characterizing the lesion as affecting a K+ conductance. Ionophoretic injection of ethylene glycol bis-(beta-aminoethyl ether) n,n,n′,n-tetraacetic acid (EGTA) to buffer internal Ca2+ concentration reduced the increased K+ current and tail of therestless cell, indicating Ca2+ activation of the K+ current. Time course and amplitude of remaining currents after blockage of K+ conductances with Cs+ and TEA+ were similar in wild-type andrestless cells suggesting norestless defect in entry of calcium. The Ca2+-activated sodium current was similar in the mutant to that in wild type arguing against a defect in calcium regulation activating the K+ channel in therestless cell. We conclude that therestless mutation alters a Ca2+-activated potassium conductance other than the one previously described. The multiplicity of Ca2+-activated potassium conductances inParamecium is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01925794
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