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  • 1
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    Eliminating Impurity Traps in the Silane Process (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Redistribution reaction section of silane process progressively separates heavier parts of chlorosilane feedstock until light silane product is available for pyrolysis. Small amount of liquid containing impurities is withdrawn from processing stages in which trapping occurs and passed to earlier processing stage in which impurities tend to be removed via chemical reactions.
    Keywords: MATERIALS
    Type: NPO-15217 , NASA Tech Briefs (ISSN 0145-319X); 6; 4; P. 398
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Removing Chlorides From Metallurgical-Grade Silicon (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Process for making low-cost silicon for solar cells is further improved. Silane product recycled to feed stripper column converts some of heavy impurities to volatile ones that pass off at top of column with light wastes. Impurities--chlorides of arsenic, phosphorus, and boron-would otherwise be carried to subsequent distillations where they would be difficult to remove. Since only a small amount of silane is recycled, silicon production efficiency remains high.
    Keywords: MATERIALS
    Type: NPO-15218 , NASA Tech Briefs (ISSN 0145-319X); 6; 4; P. 399
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Low-Waste Purification of Silicon (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Ultra-high-purity silicon required for solar cells, transistors and integrated circuits can be produced from metallurgical grade silicon by formation and pyrolysis of silane gas in continuous-flow process that maximizes product purity with minimum amount of equipment. Integrated process recycles unreacted and byproduct materials, minimizing material losses and simplifying waste disposal. Ensures effective removal of impurities, including boron.
    Keywords: MATERIALS
    Type: NPO-15033 , NASA Tech Briefs (ISSN 0145-319X); 6; 4; P. 397
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Electrochemical Growth Of Crystals In Gels (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Nucleation and growth rates readily controlled. Technique developed to grow crystals by controlling rate of transfer of one component into crystallization volume. Method involves electrochemically controlled generation of one of precipitation species, coupled with diffusion barrier. New procedure, developed in connection with formation of lead tin telluride by reaction in gels of metal ions with telluride ions.
    Keywords: MATERIALS
    Type: LAR-13608 , NASA Tech Briefs (ISSN 0145-319X); 12; 3; P. 48
    Format: text
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    NASA TECHNICAL REPORTS
  • 5
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    Slow Release Of Reagent Chemicals From Gel Matrices (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Procedure developed for slow release of reagent chemicals into solutions. Simple and inexpensive and not subject to failure of equipment. Use of toothpaste-type tube or pump dispenser conceivably provides more controlled technique for storage and dispensation of gel matrix. Possible uses include controlled, slow release of reagents in chemical reactions, crystal growth, space-flight experiments, and preformed gel medications from packets.
    Keywords: MATERIALS
    Type: LAR-13607 , NASA Tech Briefs (ISSN 0145-319X); 12; 2; P. 57
    Format: text
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    NASA TECHNICAL REPORTS
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