ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The growth kinetics and optical properties of thin layers of MnSi1.73 have been studied. MnSi1.73 was formed by thermal reaction (485–570°C) of Mn-Si thin-film couples, through a nucleation-controlled process. MnSi1.73 is semiconducting and the band-gap energy was optically determined using a spectrophotometer and a sample with a single MnSi1.73 layer on a silicon substrate. The value was between 0.78 and 0.83 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00694763
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