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  • 1
    Electronic Resource
    Electronic Resource
    Electron-energy-loss spectroscopy of Fe thin films on GaAs(001) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6501-6503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron-microscopy-based technique of electron-energy-loss spectroscopy (EELS) has been used to characterize electronic and magnetic properties of ultrathin Fe films grown on GaAs(100) surface, as a function of the film thickness. Large-area electron transparent membranes for microscopic analysis are prepared by ion-beam thinning or chemical etching from the substrate side, and the top surface of the ultrathin Fe film is protected by a thin Cr layer. Analysis of the Fe 2p, Cr 2p, and O 1s absorption spectra confirms that only the Cr layer is oxidized. The local magnetic moments of the ultrathin Fe films are deduced from the "white line'' branching ratio in the Fe 2p absorption spectra. For Fe films as thin as 150 A(ring), the magnetic moment is not different from that found in bulk α-Fe. For a 70-A(ring) Fe film, the local magnetic moment is enhanced although the average magnetization is reduced. As doping is suspected to be the cause for the departure from bulk α-Fe properties. In the case where the 50-A(ring) film is polycrystalline and discontinuous, spatially resolved EELS has been used to distinguish small island clusters from large crystalline particles. The large particles are α-Fe crystallites and the islands are probably also heavily affected by As doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356950
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of using the more accurate intrinsic concentration on bipolar transistor modeling (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5911-5912 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A more accurate intrinsic concentration was suggested recently. Discrepancies between using the conventional and the more accurate intrinsic concentrations on bipolar transistor modeling are assessed in this study. Our calculations show that the conventional intrinsic concentration overestimates the collector and base currents by a factor of 1.5 to 2 but affects less severely the steady-state current gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346942
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of interface strength by the modified laser spallation technique. I. Experiment and simulation of the spallation process (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2388-2396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Part I of this paper presents the modified laser spallation technique for measuring the tensile strength of planar interfaces, using a Doppler displacement interferometer. In this technique, a laser-produced compressive stress pulse in the substrate, reflecting from the coating's free surface pulls the interface in tension and leads to its failure if the tensile amplitude is high enough. The current technique is an improvement over the previous one, since the interface stress is determined directly by recording the coating or substrate free-surface velocities using a laser displacement interferometer. The recorded surface velocity is related to the interface stress via an elastic wave equation simulation. The process of coating spallation is investigated, and the effect of the stress pulse profile and the coating and substrate characteristics on the interface tensile stress is studied using the simulation. Several interface stress charts are given for wider applicability of the modified technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354698
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of interface strength by the modified laser spallation technique. II. Applications to metal/ceramic interfaces (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2397-2404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Part II of this series presents applications of the modified laser spallation technique to several interface systems. For metal/pyrolytic graphite (PG) interfaces, the tensile strength of interfaces between 3-μm-thick coatings of Sn, Sb, Cu, Nb, Al, and Cr on a PG substrate were measured in units of MPa to be 18.53, 5.99, 15.46, 41.16, 16.53, and 15.47, respectively. It was found that the interface fracture mechanisms depend on the elastic-plastic properties of the coatings, but are independent of the interface strength. Interface strength between diamond, SnO2, and Nb coatings on polycrystalline alumina substrates were measured to be (approximately-greater-than)140, 320, and 280 MPa, respectively. It is shown that the brittle fracture takes place at the interface upon spalling even if the plastic deformation exists within the coatings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354699
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of interface strength by the modified laser spallation technique. III. Experimental optimization of the stress pulse (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2405-2410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Part III of this series, experimental optimization of the laser spallation technique is achieved by investigating the effect of the kind and thickness of the constraining materials and the energy-absorbing film on the amplitude and profile of the generated stress pulse. An experimental setup consisting of a 0.5-μm-thick Al film as the energy absorbing film and a 5 μm layer of solid water glass as the constraining material is found to maximize the stress pulse amplitude. In addition, the effect of the substrate material on the shape of the stress pulse is also determined. Finally, it was found that for a given substrate, the pulse profile is independent of the laser fluence, indicating similar laser-material interaction phenomena over the range of fluence levels considered here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354700
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature and impact ionization effects on fT of advanced bipolar transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2402-2407 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modeling the cutoff frequency (fT) of the advanced bipolar transistors at avalanche breakdown has been developed. The analytical equations developed account for temperature and impact ionization effects on fT and high-current effects at the collector-base junction. Process sensitivity of the collector charging time at the avalanche breakdown regime has been examined. The experimental data reported in the literature are compared in support of the model. Good agreement between the model prediction and measurement is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349391
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis of diamond powder in acetylene oxygen plasma (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1247-1251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond particles 10–500 nm in diameter were produced by microwave-assisted combustion of acetylene in oxygen. Both premixed and diffusion flame configurations were investigated. A mixture of cubic and hexagonal polytypes of diamond were identified. Larger particle sizes were observed at lower reactor pressure and higher C to O atomic ratios. C to O atomic ratios between 0.83 and 1.0 produced crystalline diamond powder while other ratios produced graphite, soot, and amorphous carbon phases. Diamond formation was not observed when reaction pressures were above 150 Torr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346725
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  • 8
    Electronic Resource
    Electronic Resource
    Induced nucleation of diamond powder (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 546-548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of heteroatom addition on the nucleation of solid carbon in a low-pressure plasma reactor were investigated. Silane or diborane were added to acetylene mixed in hydrogen or argon. Oxygen was added to some of the diborane containing gas mixtures. Silane containing mixtures resulted in powder comprised of weakly bonded amorphous hydrogenated carbon-silicon material. The addition of diborane resulted in substantial production of diamond particles, 5 to 450 nm in diameter, under the conditions that show no diamond formation without diborane present. The observed yield of the oxidation-resistant powder produced in boron-containing mixtures reached 1.3 mg/h with the linear growth rates of diamond particles on the order of 102–104 μm/h. Implication of these results to interstellar dust formation is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105434
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanisms and Functions of Cell Death (1991)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Cell and Developmental Biology 7 (1991), S. 663-698 
    Details
    ISSN: 0743-4634
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.cb.07.110191.003311
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  • 10
    Electronic Resource
    Electronic Resource
    Probing of Carriers in Oxide Superconductors (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 129 (Jan. 1993), p. 49-64 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.129.49.pdf
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