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  • 1
    Electronic Resource
    Electronic Resource
    Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3301-3313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (3–300-nm) oxides were grown on single-crystal silicon substrates at temperatures from 523 to 673 K in a low-pressure electron cyclotron resonance (ECR) oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal-oxide-semiconductor technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O−, transport limited growth. Constant current anodizations yielded three regions of growth: (1) a concentration gradient dominated regime for oxides thinner than 10 nm, (2) a field dominated regime with ohmic charged oxidant transport for oxide thickness in the range of 10 nm to approximately 100 nm, and (3) a space-charge limited regime for films thicker than approximately 100 nm. The relationship between oxide thickness (xox), overall potential drop (Vox) and ion current (ji) in the space-charge limited transport region was of the form: ji ∝ V2ox/x3ox. Transmission electron microscopy analysis of 5–60-nm-thick anodized films indicated that the silicon-silicon dioxide interface was indistinguishable from that of thermal oxides grown at 1123 K.High-frequency capacitance-voltage (C-V) and ramped bias current-voltage (I-V) studies performed on 5.4–30-nm gate thickness capacitors indicated that the as-grown ECR films had high levels of fixed oxide charge ((approximately-greater-than)1011 cm−2) and interface traps ((approximately-greater-than)1012 cm−2 eV−1). The fixed charge level could be reduced to ≈4×1010 cm−2 by a 20 min polysilicon gate activation anneal at 1123 K in nitrogen; the interface trap density at mid-band gap decreased to ≈(1–2)×1011 cm−2 eV−1 after this process. The mean breakdown strength for anodic oxides grown under optimum conditions was 10.87±0.83 MV cm−1. Electrical properties of the 5.4–8-nm gates compared well with thicker films and control dry thermal oxides of similar thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349264
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetics of photoresist etching in an electron cyclotron resonance plasma (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1859-1865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron cyclotron resonance plasma processing system was used to etch hardbaked KTI-820 photoresist from single crystal silicon wafers, silicon dioxide films and patterned multilayer structures. Etch rates of 1500 nm/minute were observed at a substrate temperature below 373 K in a Pforward=750 W, 0.13-Pa ECR oxygen plasma with no applied substrate bias. The etch rate increased linearly with increasing power from Pforward=300–750 W. Etch rate was a complicated function of pressure and residence time, but a modified adsorption-reaction-ion-stimulated desorption rate expression could be used to fit the data. Etch rates decreased for increasing oxygen residence time at low operating pressures due to a combination of polymeric film formation of reaction products and reactant (atomic oxygen) depletion. Maximum etch rates were observed at approximately 0.13 Pa for all residence times. Multilayer photoresist structures were etched at various pressures as well as at a 45° angle to the incident plasma stream. Etch profiles for the variable angle runs indicated that the etch rate was strongly dependent on ion flux. Etch anisotropy increased with decreasing pressure, consistent with increased ion bombardment energy. The degree of anisotropy was, however, limited due to a non-normal component of ion energy, which has been interpreted previously as an ion temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346598
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical model for wire chamber aging in CF4/iC4H10 gases (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5327-5340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aging of proportional counters in CF4/iC4H10 mixtures is studied as a function of gas composition. Anode surfaces are analyzed by Auger electron spectroscopy. Anode-wire deposits are formed from 95/5 and 90/10 mixtures of CF4/iC4H10; etching of deposits occurs in 50/50 and 80/20 mixtures of CF4/iC4H10 and in pure CF4. Gold-plated wires are resistant to aging resulting from chemical attack by CF4, but non-gold-plated wires are too reactive for use in CF4-containing gases. An apparent cathode aging process resulting in loss of gain rather than in a self-sustained discharge current is observed in CF4 and CF4-rich gases. Principles of low-pressure rf plasma chemistry are used to interpret the plasma chemistry in avalanches (≥1 atm, dc). To understand anode aging in CF4/iC4H10 gases, a four-part model is developed considering: (i) plasma polymerization of iC4H10; (ii) etching of wire deposits by CF4; (iii) deposition that occurs as a result of radical scavenging in strongly etching environments; and (iv) reactivity of the wire surface. Practical guidelines suggested by the model and application of the model to other fluorine-containing gases are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354234
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  • 4
    Electronic Resource
    Electronic Resource
    Investigations on the Anther Culturability of Four German Spring Wheat Cultivars and the Influence of Light on Regeneration of Green vs. Albino Plants (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 105 (1990), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: In anther culture experiments with four German spring wheat cultivars (‘Turbo’, ‘Kadett’, ‘Planet’ and ‘Nandu’), ‘Nandu’ showed the best results. The rate of responding anthers with ‘Nandu’ was 0.8 % on medium N6 and 3.7% on potato-2. This was similar to the Chinese cultivar ‘Orofen’. Higher yields of embryoids could be obtained with medium potato-2 than with N6.Experiments with medium potato-2 showed that anther response, production of embryos and regeneration increased with decreasing agarose concentration.Regeneration of green plantlets was improved by differentiation in the dark whereas differentiation under light yielded more than 90 % albino plants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1990.tb00450.x
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  • 5
    Electronic Resource
    Electronic Resource
    Inheritance of Resistance to Striga in Sorghum Genotype SRN39 (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 109 (1992), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Striga hermonthica (Del.) Benth., a parasitic weed of grasses, causes major yield reductions in the principal cereal crops of semi-arid Africa. Cultivar resistance is the most economic control measure, since adapted, resistant cultivars can be grown without additional input from the subsistence farmer. Information on the genetics of resistance to S. hermonthica is scant. This is partially attributable to the rarity of germplasms which exhibit stable resistance across geographical regions. The objective of this study was to determine if the stable resistance observed in sorghum [Sorghum bicolor (L.) Moench] cultivar SRN39 is heritable. Crosses were made between SRN39 and a susceptible parent, P954063. Parental, F1, F2 and backcross generations were grown in infested pots and development of both host and parasite was monitored. Significant variation among genotypes was observed for both host traits and effects on parasite populations. The F1 did not differ significantly in Striga resistance from the susceptible parent, suggesting recessive inheritance. However, hybrid vigor was exhibited by the F1 which yielded and developed as well as the resistant parent. Broad sense heritability ranged from 0.23 to 0.55 for host traits and from 0.10 to 0.43 for effect of genotypes on the Striga population. Joint scaling tests showed that observed variation in each host or parasite trait consisted of additive and dominance components, suggesting possible progress could be made with appropriate selection schemes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1992.tb00178.x
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  • 6
    Electronic Resource
    Electronic Resource
    An x-ray photoelectron spectroscopic analysis of plasma deposited silicon nitride films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6851-6859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of deposition conditions on the structure and composition of plasma deposited silicon nitride films was studied using x-ray photoelectron spectroscopy. Plasma deposited silicon nitride films were transferred directly from the deposition chamber into a surface analysis system, thereby permitting analysis of as-deposited films without modification due to ion sputtering. Plasma deposited silicon nitride films with N:Si ratios from 1.8–0.3 were deposited using SiH4, NH3, N2, and H2 as the source gases. The N:Si ratio in the films increased with increasing nitrogen concentration in the gas phase. Changes in the deposition power or the substrate temperature also influenced the N:Si ratio. Large differences in the film structure were observed for plasma deposited silicon nitride films formed with NH3 compared to N2 with respect to deposition temperature variations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345075
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  • 7
    Electronic Resource
    Electronic Resource
    Tantalum etching in fluorocarbon/oxygen rf glow discharges (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3609-3617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch rates of tantalum in tetrafluoromethane-oxygen and hexafluoroethane-oxygen rf glow discharges were measured in situ as functions of pressure, reactor residence time, temperature, and applied plasma power. A dramatic increase in the etch rate was observed as the pressure increased. In addition, two distinct temperature regimes occurred in Arrhenius plots. Such data suggest strong effects due to heat of reaction in the Ta/CF4-O2 etch system. The observed etch-rate pressure dependence can be explained by assuming first-order kinetics for the reaction of fluorine atoms with tantalum. Evidence for etch-rate quenching at high pressures due to an increase in the deposition of an inhibiting fluorocarbon surface layer is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345313
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  • 8
    Electronic Resource
    Electronic Resource
    A noninvasive method for the measurement of flow-induced surface displacement of a compliant surface (1993)
    Springer
    Experiments in fluids 14 (1993), S. 78-84 
    Details
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A noninvasive optical method is described which allows the measurement of the vertical component of the instantaneous displacement of a surface at one or more points. The method has been used to study the motion of a passive compliant layer responding to the random forcing of a fully developed turbulent boundary layer. However, in principle, the measurement technique described here can be used equally well with any surface capable of scattering light and to which optical access can be gained. The technique relies on the use of electro-optic position-sensitive detectors; this type of transducer produces changes in current which are linearly proportional to the displacement of a spot of light imaged onto the active area of the detector. The system can resolve displacements as small as 2 μm for a point 1.8 mm in diameter; the final output signal of the system is found to be linear for displacements up to 200 μm, and the overall frequency response is from DC to greater than 1 kHz. As an example of the use of the system, results detailing measurements obtained at both one and two points simultaneously are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00196991
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  • 9
    Electronic Resource
    Electronic Resource
    A mass spectrometric analysis of CF4/O2 plasmas: Effect of oxygen concentration and plasma power (1990)
    Springer
    Plasma chemistry and plasma processing 10 (1990), S. 261-275 
    Details
    ISSN: 1572-8986
    Keywords: Fluorocarbon ; plasma ; quadrupole mass spectrometry ; downstream
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A quadrupole mass analyzer was used to detect the neutral products extracted downstream from a CF4/O2 RF discharge at 80 mtorr. mtorr. Stable discharge products were investigated as a junction of plasma power, residence time, oxygen concentration, and plasma voltage standing-wave ratio. In general, as plasma power increased from 10 to 200 W, production of CO increased while the measured mole fractions of CO2 and COF2 stabilized. The ratio of' CO to CO, decreases! at low plasma powers as the oxygen concentration increased. ,4n increase in the relative conversion of CF4 to oxygenated products occurred at both low plasma powers and low oxygen concentrations. Chemical mechanisms are suggested to account for these results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447130
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  • 10
    Electronic Resource
    Electronic Resource
    Effective interactions and transport properties of degenerate spin-polarized3He-4He mixtures (1990)
    Springer
    Journal of low temperature physics 81 (1990), S. 103-118 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present calculations of the thermal conductivity, viscosity, and longitudinal spin diffusion of degenerate3He-4He mixtures as a function of spin polarization. Physical arguments and sum rules are used to describe qualitatively the behavior of the effective interactions between two3He quasiparticles. A recently proposed potential model is consistent with these expectations and provides the momentum- and polarization-dependent transition probabilities that enter into transport calculations. In the limit of small3He concentrations, our results agree with previous calculations based on the hard sphere model. For concentrations nearing saturation, however, we find structure in the thermal conductivity as a function of polarization with the3He density kept fixed. While the behavior of the viscosity remainsqualitatively similar to that at low concentration, the spin diffusion coefficient is qualitatively different. This behavior of the transport coefficients is largely a consequence of the strongly polarization dependentm z =1 triplet scattering rate which becomes comparable to that in the singlet channel at large polarizations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00683154
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