ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The performance of doped barrier, multiple-quantum-well avalanche photodiodes (MQW APDs) is reported for the first time. Investigations are presented for a 800 A(ring)/200 A(ring) MQW Al0.35Ga0.65As/GaAs undoped structure with a p-n junction in each barrier. The devices exhibit low dark currents, low breakdown voltages (−10 V), and gains up to 20 for electron injection. Noise measurements show an enhancement of the electron to hole ionization rates ratio, α/β, to values between 50 and 12.5 for gains up to 5, and to 5 for gains above 5. α/β is enhanced by a factor of 6 over the bulk GaAs, and a factor of at least 2 over the simple MQW APD. The particular design we report provides medium gain and very-low-noise characteristics at low bias voltage. These experimental noise results are the best reported so far for AlGaAs/GaAs MQW APD structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107383
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