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  • 1
    Electronic Resource
    Electronic Resource
    Design parameters of a resonant infrared photoconductor with unity quantum efficiency (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 622-624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new concept for an infrared photoconductor with enhanced characteristics, such as unity quantum efficiency, high photoconductive gain, and very low noise equivalent power is introduced. The idea revolves around establishing a relatively high finesse absorption-cavity internal to the detector element. A theoretical analysis demonstrates this concept and provides some design guidelines. This concept offers many advantages, especially for low-background astronomy, and may prove to be technologically simpler to implement than other concepts such as the impurity-band-conduction approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104548
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    Paper (German National Licenses)
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  • 2
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    Design parameters of a resonant infrared photoconductor with unity quantum efficiency (1991)
    American Institute of Physics
    Details
    Publication Date: 1991-02-11
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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    PAPER CURRENT
  • 3
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    Design parameters of a resonant infrared photoconductor with unity quantum efficiency (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: This paper proposes a concept of a resonant infrared photoconductor that has characteristics of 100 percent quantum efficiency, high photoconductive gain, and very low noise equivalent power. Central to this concept is an establishment of a high-finesse absorption cavity internal to the detector element. A theoretical analysis is carried out, demonstrating this concept and providing some design guidelines. A Ge:Ga FIR detector is presently being fabricated using this approach.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 58; 622-624
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Performance of multiplexed Ge:Ga detector arrays in the far infrared (1990)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The performance of two multi-element, multiplexed Ge:Ga linear arrays under low-background conditions was investigated. The on-focal switching is accomplished by MOSFET switches, and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns, and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the highest responsivity was 584 A/W, the noise equivalent power was 1.0 x 10(exp -16) W/square root of Hz, and the read noise was 6100 electrons/sample. A detailed description of the test setup and procedure is presented.
    Keywords: SPACE SCIENCES (GENERAL)
    Type: NASA-TM-102275 , A-90053 , NAS 1.15:102275
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 5
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    Resonant infrared detector with substantially unit quantum efficiency (1994)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A resonant infrared detector includes an infrared-active layer which has first and second parallel faces and which absorbs radiation of a given wavelength. The detector also includes a first tuned reflective layer, disposed opposite the first face of the infrared-active layer, which reflects a specific portion of the radiation incident thereon and allows a specific portion of the incident radiation at the given wavelength to reach the infrared-active layer. A second reflective layer, disposed opposite the second face of the infrared-active layer, reflects back into the infrared-active layer substantially all of the radiation at the given wavelength which passes through the infrared-active layer. The reflective layers have the effect of increasing the quantum efficiency of the infrared detector relative to the quantum efficiency of the infrared-active layer alone.
    Keywords: OPTICS
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 6
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    Evaluation of a far infrared Ge:Ga multiplexed detector array (1990)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: The performance of a multielement Ge:Ga linear array under low-background conditions is investigated. On-focal plane switching is accomplished by MOSFET switches and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the responsivity was measured to be nominally 584 A/W, and the NEP was 1.0 x 10 exp -16 W/sq rt Hz. A detailed description of the test setup and the procedure is presented.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: Cryogenic Optical Systems and Instruments IV; Jul 10, 1990 - Jul 12, 1990; San Diego, CA; United States
    Format: text
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    NASA TECHNICAL REPORTS
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