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1

Digitale Medien

Electrical properties of polycrystalline chalcopyrite AgInS2 films (1992)

Hattori, K. ; Akamatsu, K. ; Kamegashira, N.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 3414-3418

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Polycrystalline chalcopyrite AgInS2 films 2.0–3.5 μm thick have been formed on glass substrates. Resistivities, carrier concentrations, and Hall mobilities are measured at room temperature. These quantities are shown to be changed greatly by annealing under maximum S pressure for 1 h at different temperatures. Resistivities of 1–104 Ω cm and carrier concentrations of 2×1015–3×1020 cm−3 are obtained in n-type films. In p-type films, resistivities are found to be higher than 1×104 Ω cm, and carrier concentrations are less than 3×1015 cm−3. The effects of vacancies and interstitials of Ag, In, and S atoms are discussed to explain the observed changes in the electrical properties of the films. Owing to various structural imperfections, Hall mobilities are found to be less than 2 cm2/V s in both n- and p-type films. Au-p-type AgInS2 Schottky diodes have been fabricated. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics are measured at room temperature. The ideality factor is evaluated as about 1.63. In the frequency range 10−4–1 MHz, large frequency dispersion is observed in the C–V curves, and explained in terms of the response of deep defect levels.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.350938

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2

Digitale Medien

Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors (1993)

Hattori, K. ; Koji, Y. ; Fukuda, S. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 3846-3851

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.352894

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3

Digitale Medien

Photocurrent multiplication in a hydrogenated amorphous silicon-based p-i-n junction with an a-SiN:H layer (1992)

Yoshimi, M. ; Ishiko, T. ; Hattori, K. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 3186-3193

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Photocurrent multiplication has been observed in a hydrogenated amorphous silicon-based p-i/a-SiN:H/i-n structure junction under a reverse biased condition. A systematic investigation on the photocurrent characteristics in this junction system has been carried out. It has been shown from the analysis of the results that multiplication arises from the interband tunneling injection of valence band "electron'' through the a-SiN:H barrier layer. A device modeling on the basis of the experimental data permits us to design the device structure for achieving better performances. As a preliminary optimization of device structure, an external quantum efficiency exceeding 70 has been obtained under the operation voltage 30 V in the heterojunction photodiode having an a-SiN:H (thickness of 40 nm with optical energy gap 2.1 eV) at the p a-SiC:H/i a-Si:H interface. The proposed highly sensitive photomultiplier device might have a wide variety of application fields such as a solid-state imager for high-definition televisions, etc.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.351481

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4

Digitale Medien

Electrical properties of InPxOy -InP metal-insulator-semiconductor structures (1991)

Hattori, K. ; Torii, Y.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 3130-3134

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The electrical properties of n-type InP metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, InPxOy layers are formed by a new method. In the method, a Px'Oy' layer is deposited on InP by evaporation of P2O5 powder. The reaction between the Px'Oy' layer and InP substrate yields an InPxOy layer. The InPxOy layers 500–1450 A(ring) thick exhibit high resistivities ρ and low dielectric dissipations D, i.e., ρ≈2×1015 Ω cm and D≤0.01 in the frequency range 0.02–100 kHz at room temperature. The hysteresis in the capacitance-voltage curves of a typical InP MIS structure is found to be less than 0.6 V and an ion-drift type. The interfacial properties of InP MIS structures are shown to be well explained by the statistical model in the conductance method. A typical value of the minimum surface state density is evaluated as 3.3×1011 cm−2 eV−1 at about 0.26 eV below the conduction-band edge. The distribution of the electron capture cross sections σ of surface states is also obtained, e.g., σ=1.6×10−16 cm2 at 0.4 eV below the conduction-band edge.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.348580

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5

Digitale Medien

Electrical properties of SiInxPyOz-InSb metal-insulator-semiconductor structures (1991)

Hattori, K. ; Torii, Y.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 1506-1509

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The electrical properties of n-type InSb metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, SiInxPyOz layers are formed on InSb by a new method. In the method, an In-SiOx' double layer is formed on the InSb (111)B surface by evaporation of SiO and In. Further, a Py'Oz' layer is deposited on the double layer. The reaction between a Py' Oz' layer and In-SiOx' double layer yields a SiInxPyOz layer. The SiInxPyOz layers exhibit high resistivities ρ, i.e., ρ≈6.5× 1015 Ω cm at 100 K and 1.0×1014 Ω cm at room temperature. The hysteresis in the capacitance-voltage (C-V) and conductance-voltage (G-V)curves of InSb MIS structures at 100 K is found to be less than 0.6 V and an injection type. The surface-state density in the MIS interface is evaluated by including the effects of the nonparabolicity of the conduction band and Fermi–Dirac statistics for electrons in InSb. A typical value of the minimum surface state density is observed as 8.3× 1011 cm−2 eV−1 at about 0.05 eV below the conduction-band edge. Further, the C-V characteristics of InSb MIS structures at room temperature are discussed by including the features of the narrow band-gap semiconductor.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.347240

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6

Digitale Medien

Modulated photoconductivity study of charged and neutral defects in undoped amorphous silicon (1994)

Hattori, K. ; Adachi, Y. ; Anzai, M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 2841-2850

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A novel spectroscopy technique based on modulated photoconductivity measurements with varying illumination level has been applied to investigate the capture coefficients and the energy distribution of defect states in undoped amorphous silicon. From the experimental data, charged and neutral defect distributions are clearly resolved according to their own capture coefficients. The carrier capture process as well as the defect formation mechanism are both quantitatively discussed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357520

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7

Digitale Medien

Photosensitivity in phosphorus-doped silica glass and optical waveguides (1994)

Malo, B. ; Albert, J. ; Bilodeau, F. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 394-396

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Irradiation of hydrogen loaded or flame brushed phosphorus doped, germanium free silica glass with a 193-nm ArF excimer laser changes the optical absorption at ultraviolet wavelengths by 40–140 dB/mm and the refractive index by more than 2×10−4. Bragg gratings with 90%–95% reflectivity are photoinduced in channel optical waveguides made from this glass. The thermal stability of the photosensitivity is measured by annealing up to 700 °C.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.112312

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8

Digitale Medien

Theoretical studies of defect-initiated particle emission from GaP(110) surfaces: Basis for a new technique of generating perfect surfaces (1992)

Itoh, N. ; Hattori, K. ; Nakai, Y. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 3271-3273

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have calculated the energy needed to eject P atoms from several types of defects on the GaP (110) surface as well as from the perfect surface. It is found that most types of defects have a Ga or P atom bonded less strongly than those on the perfect surface. In view of the result of calculation, and of recent experimental observation that less strongly bonded atoms are ejected by irradiation with laser pulses of lower fluences, we suggest a new method of producing perfect surfaces using laser irradiation to eliminate steps and adatoms and deposition to eliminate vacancies.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.106716

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9

Digitale Medien

Millimeter-wave phase-imaging interferometer for the GAMMA 10 tandem mirror (1991)

Hattori, K. ; Mase, A. ; Itakura, A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 62 (1991), S. 2857-2861

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ISSN: 1089-7623

Quelle: AIP Digital Archive

Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik

Notizen: A millimeter-wave phase-imaging interferometer has been developed for the study of density profiles of the GAMMA 10 tandem mirror. The interferometer uses a 70-GHz klystron oscillator and a quasi-optical transmission system. The probe beam is expanded so as to fill an orthogonal view of a plasma cross section. The view is imaged onto a detector array. The detector array consists of beam-lead GaAs Schottky barrier diodes bonded to antennas fabricated using photolithographic techniques on a fused-quartz substrate. Two types of antennas, bow-tie and Yagi–Uda antennas have been used in order to provide an effective matching to millimeter-wave beams, and compared for the performance of an imaging system. The interferometers have been applied to the central-cell and plug-cell plasmas of GAMMA 10.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1142172

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10

Digitale Medien

In situ measurement of stress and surface morphology for Co/Pd multilayer films fabricated by rf sputtering : 38th Annual Conference on Magnetism and Magnetic Materials (1994)

Takeshita, H. ; Hattori, K. ; Fujiwara, Y. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 6415-6417

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this paper, we report the results of in situ measurements of stress and surface morphology for Co/Pd multilayer films deposited on glass substrate by rf sputtering. For the multilayer film sputtered in low Ar gas pressure at 10 mTorr, after more than 20 periods of Co/Pd deposition, the film is subjected to compressive stress, however, during the Co layer deposition, the value of the compressive stress is decreasing. For the film sputtered in high Ar gas pressure at 40 mTorr, the film is always subjected to tensile stress, and the value of the tensile stress in the film is increasing during the deposition of the Co layer. These changes in the stress during the Co deposition can be explained qualitatively by the difference in the lattice constants of Co and Pd at the interfaces. The surface morphology of the films observed by an atomic force microscope (AFM) in air shows that the surface of both films become rougher with increasing total film thickness. The surface roughness of the films deposited at 10 mTorr is smaller than that of the films deposited at 40 mTorr.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.355369

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