Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Review of Scientific Instruments
62 (1991), S. 1400-1403
ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A combined molecular-beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III-V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). Using this system, it is possible to quench the growth and produce real-space images of the surface as it appeared during deposition. Measurements obtained with both RHEED and STM are presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1142456
Permalink
|
Location |
Call Number |
Expected |
Availability |