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  • 1
    Electronic Resource
    Electronic Resource
    Sulphur diffusion in GaAs-AlAs superlattices (1991)
    Springer
    Optical and quantum electronics 23 (1991), S. S813 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Diffusion and heat treatment experiments in closed ampoules were carried out on two different molecular beam epitaxy-grown GaAs-AlAs superlattice wafers. All of the diffusion experiments were undertaken at 1000° C. The effects of varying the As and S vapour pressures as well as the diffusion time were investigated. Angle-lapping, transmission electron microscopy, X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy were the techniques employed to analyse the samples. It was demonstrated that the diffusion of S enhances the group III interdiffusion or ‘intermixing’ compared with the effect of plain heat treatment. It was also shown that S-induced intermixing has two origins, one being the diffusion of S and its effects on the concentration of native defects and the other being a mechanism related to the formation of a coating on the semiconductor surface during the diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624972
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing-induced dislocation loops in Si-doped GaAs-AIAs superlattices (1993)
    Springer
    Journal of materials science 4 (1993), S. 29-37 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Dislocation loops were observed to form in the Si-doped layer of an MBE-grown GaAs-AIAs superlattice structure as a result of annealing. The density and size of the loops, as estimated by cross-sectional TEM, were shown to depend on the As pressure, annealing time and temperature. The loops are proposed to nucleate as a result of the undersaturation of As vacancies, caused by the site-switching of Si atoms from group III sites to As sites. The deficient As vacancies are restored by the crystal which generates Frenkel pairs. Consequently, As interstitials are created in excess. These latter species precipitate in the form of platelets of interstitials which produce dislocation loops. As the annealing time increases and more excess interstitials are accommodated, the loops gradually dissociate by recombination of the interstitials forming the loops with vacancy pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00226630
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  • 3
    Electronic Resource
    Electronic Resource
    Deep levels in GaAs/AlGaAs multi-quantum well structures (1990)
    Springer
    Journal of materials science 1 (1990), S. 75-78 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The study of the behaviour of deep traps in Al x Ga1-x As/n-GaAs multi-quantum well structures with three different well widths (1.7, 2.5 and 3.4 nm) has been performed using deep level transient spectroscopy. The measurements showed the presence of two closely spaced levels in each structure in the temperature range 160 to 270 K. It was found that as the GaAs well width increased, the apparent activation energies and the concentrations of both levels decreased. It is seen that in the 1.7 nm well samples, the lower temperature level is dominant, but in the 2.4 and 3.4 nm well samples, both levels were comparable in concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00694910
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  • 4
    Electronic Resource
    Electronic Resource
    Annealing of GaAs/AIAs superlattices (1990)
    Springer
    Journal of materials science 1 (1990), S. 133-136 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A 60 nm GaAs/AIAs superlattice has been annealed under a variety of conditions. In the case of samples annealed in an arsenic rich atmosphere, the disordering of the superlattice was observed to be non-uniform. This non-uniformity of the disordering is in contrast to the observed disordering of the sample annealed under arsenic dissociative pressure. In this case the disordering of the superlattice was uniform throughout the sample. Until now evidence for the depth dependency of the interdiffusion process relied solely on the interpretation of photoluminescence results. The data obtained from these experiments clearly indicate that the interdiffusion of GaAs/AIAs superlattices cannot be represented by one interdiffusion coefficient, as proposed by Tan and Gosele. In addition, it is demonstrated that the interdiffusion coefficient presented by Tan and Gosele overestimates the true interdiffusion coefficient at 1000° C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00694732
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of arsenic pressure on the diffusion-induced disordering of tin in AlAs-GaAs superlattices (1991)
    Springer
    Journal of materials science 2 (1991), S. 137-140 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Tin diffusions into AlAs-GaAs superlattices have been performed in sealed silica ampoules. The present experiments, for the first time, examine the effect of As on tin induced disordering. SIMS and shallow-angle bevel revealed that both the tin surface concentration and the width of the disordered region are increased when a higher arsenic pressure inside the ampoule is used. Such dependence on the arsenic pressure is explained by the diffusion via a negatively charged complex which may take the form of [VGaSnAsVGa]−. The disordering effect could be attributed to the diffusion of Ga vacancies associated with the migration of the complexes. However, a more likely explanation is the Fermi-Level effect which has been proposed to explain the enhancement of the interdiffusion in Si doped samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00696287
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  • 6
    Electronic Resource
    Electronic Resource
    Combined fine-coarse mesh transmission-line modelling method for diffusion problems (1990)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 3 (1990), S. 111-126 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The paper presents a combined fine-coarse mesh TLM method. This technique reduces the memory storage and the computational time when modelling complex structures. In the combined fine-coarse mesh model, the region of interest is covered with a set of transmission-line fine meshes. The remaining part is covered with regular (or irregular) coarse meshes. The fine-mesh nodes are connected through busbars to the adjacent coarse-mesh nodes. The combined fine-coarse mesh TLM technique is applied to some diffusion problems. Significant savings in computational time and memory storage are obtained without loss of accuracy.
    Additional Material: 20 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660030207
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  • 7
    Electronic Resource
    Electronic Resource
    Editorial (1990)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 3 (1990), S. 77-77 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660030202
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  • 8
    Electronic Resource
    Electronic Resource
    Editorial (1991)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 4 (1991), S. 1-1 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660040102
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  • 9
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    The effect of As on Zn diffusion-induced disordering of AlAs/GaAs superlattices (1990)
    Institute of Physics
    Details
    Publication Date: 1990-06-01
    Print ISSN: 0268-1242
    Electronic ISSN: 1361-6641
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by Institute of Physics
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