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  • 1
    Electronic Resource
    Electronic Resource
    Alloy composition dependence of defect energy levels in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S (x≤0.24) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1862-1867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect energy levels in metalorganic chemical vapor deposition (MOCVD) grown GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S epilayers (x≤0.24) have been studied by photoluminescence (PL) and photoconductivity (PC) measurements. To understand the origin of the observed deep levels, we have determined the temperature dependence of the intensity and half-width of the dominant deep-level PL peaks. We find that (1) the dominant deep-level peaks of the samples grown on the same substrate are related to the epilayer composition, and move to higher energies with increasing gallium content; (2) the dominant deep-level peaks of the samples with the same epilayer composition grown on different substrates are different. They are attributed to the impurity in the substrate diffusing into the epilayer during MOCVD growth, forming an impurity-vacancy complex. The following tentative assignments are proposed: the dominant deep-level peaks in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S are attributed to the emission of a (V)P-(Fe)III complex and a (V)III-(S)P complex, respectively. Comparing the deep level with the near-band-edge emission we show that (1) all deep levels are independent of the band edge as x is varied; (2) the composition dependences of the deep levels associated with such complexes depend on the site occupied by the impurity atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354794
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis and properties of high-Tc YBa2Cu3O7−y oriented thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3493-3497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The a- and c-axis-oriented YBa2Cu3O7−y thin films were prepared by rf magnetron sputtering technique. The characterization of the thin films was carried out by inductively coupled plasma atomic emission spectroscopy, x-ray diffraction, and scanning Auger profile techniques. The Tc, Tc(H), Jc(H), and Hc2 -T(near Tc) were measured by the standard dc four-probe method. It was found that very strong anisotropy of this material was manifested in its superconducting properties, especially for c-axis-oriented thin films. It was also found that Jc depends very strongly upon stoichiometric composition 123, preferential orientation of the film, and the characteristic of the film-substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346360
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxial multilayer of YBa2Cu3O7 and PrBa2Cu3O7 on SrTiO3 and LaAlO3 substrates by sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2072-2074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated epitaxially grown YBa2Cu3O7/PrBa2Cu3O7 (YBCO/PBCO) multilayer thin films on SrTiO3 and LaAlO3 substrates by dc/rf magnetron sputtering. The thicknesses of YBCO and PBCO varied from 1 to 8 unit cells. Satellite peaks in x-ray diffraction patterns clearly indicate the formation of periodic modulation structures of different wavelengths. At a certain thickness of the YBCO layer, the zero resistance transition temperature Tc0 decreased with the increase of the PBCO layer thickness. In contrast, Tc0 increased with the increase of the YBCO layer thickness at a constant PBCO layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351640
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  • 4
    Electronic Resource
    Electronic Resource
    Critical current and flux pinning near Tc of a YBa2Cu3O7 thin film (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2461-2463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The voltage V versus current I of a high-quality YBa2Cu3O7−x thin film with zero-resistance temperature equal to 90.8 K was measured at temperatures near Tc (85, 87, and 90 K, respectively) under different magnetic fields (0–7 T). A significant result is that the critical-current density of the film reached 1.37×104 A/cm2 (zero field) even at 90 K, implying that strong pinning centers exist in our sample. However, a small applied magnetic field will diminish the critical-current densities remarkably. The pinning-force densities are found to follow Kramer's scaling law in both perpendicular and parallel directions of the magnetic fields to the c axis of the film. A possible influence of thermally activated flux creep on the pinning mechanism is confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349400
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  • 5
    Electronic Resource
    Electronic Resource
    Critical current measurements in YBa2Cu3O7−x thin film grown on LaAlO3 substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 884-886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical current density Jc(B,T) of epitaxial YBa2Cu3O7−x (YBCO) thin films on LaAlO3 was measured under different applied magnetic fields (0–7 T) with the temperature ranging from 65 to 79 K. At 65 K, the zero-field critical current density of the best film was 5.8×106 A/cm2; even at magnetic fields up to 7 T, Jc could reach as high as 1×106 A/cm2. Strong anisotropy was observed at 79 K. The anisotropy behavior diminished with the decrease of temperature. Experimental results showed that Jc was proportional to (Tc−T)3/2 ; this was in accordance with the theoretical explanation by the Josephson junction model for granular superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346784
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  • 6
    Electronic Resource
    Electronic Resource
    Study of the low-lying electronic states of Si2 and Si−2 using negative ion photodetachment techniques (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1441-1448 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The low-lying electronic states of Si−2 and Si2 were studied using both photoelectron spectroscopy and threshold photodetachment spectroscopy of Si−2 . Our measurements show that the ground state of Si2 is the X 3Σ−g state and that the X 3Σ−g–D 3Πu splitting is 0.083±0.010 eV. Additional spectroscopic constants for the X 3Σ−g, D 3Πu, a 1Δg, b 1Πu and c 1Σ+g states of Si2 were also determined. For Si−2 , the first two electronic states were identified as: 2Πu (Te =0, re =2.207±0.005 A(ring), and ν=533±5 cm−1) and 2Σ+g (Te =0.025±0.010 eV, re =2.116±0.005 A(ring), and ν=528±10 cm−1). The electron affinity for Si2 was found to be 2.176±0.002 eV. Our results provide definitive orderings and splittings for the low-lying electronic states in both Si2 and Si−2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461057
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  • 7
    Electronic Resource
    Electronic Resource
    The reaction of atomic fluorine with formyl fluoride: An experimental and theoretical study (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 276-286 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate coefficient for the reaction of F+HFCO has been determined over the temperature range 298–368 K by monitoring the appearance rate of HF infrared chemiluminescence using the infrared multiphoton dissociation-infrared chemiluminescence technique. Results, expressed in the Arrhenius form k(T) =4.4±2.6×10−11 exp[−1800±400/RT] cm3 molecule−1 s−1, are compared with the barrier height calculated using ab initio molecular orbital theory. The rate coefficient is theoretically discussed with the aid of essential features of the potential energy surface for the F+HFCO system and the potential importance of the reaction is considered. A rate coefficient for deactivation of excited HF by HFCO is reported as 1.2±0.2×10−12 cm3 molecule−1 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459601
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  • 8
    Electronic Resource
    Electronic Resource
    Theoretical studies of the structure and thermochemistry of FO2 radical: Comparison of Møller–Plesset perturbation, complete-active-space self-consistent-field, and quadratic configuration interaction methods (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 2861-2867 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structure of FO2 has been calculated for the X 2A‘ ground state using Møller–Plesset (MP) perturbation, complete-active-space self-consistent-field (CASSCF), and quadratic configuration interaction (QCI) ab initio molecular orbital methods. Basis sets with polarization and diffuse functions were used. Compared with the experimental structure, bond lengths obtained with MP perturbation methods are found to be consistently too short. CASSCF calculations yield a structure which varies considerably with the size of the active space and basis set used. Calculations using the single-configuration-based QCI in the single and double-space with perturbative inclusion of triple substitutions, denoted by QCISD (T), yield structures very close to the experimental structure of FO2. The thermochemistry of FO2 radical has been calculated using the MP, QCI, and gaussian-1 (G1) methods. The QCI method using isodesmic and isogyric schemes has predicted the heat of formation for FO2 at 0 K to be 8.9±3 kcal mol−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461982
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  • 9
    Electronic Resource
    Electronic Resource
    Ab initio studies of dissociation pathways on the ground state potential energy surface for HFCO and HClCO (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7587-7596 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reaction pathways for the decomposition of HFCO and HClCO on the ground state potential energy surface have been studied by using ab initio methods. Heats of reaction and barrier heights have been computed by using Møller–Plesset perturbation theory. Spin projections have been applied to free radical dissociation pathways for annihilation of spin contamination. The favorable dissociation path predicted is molecular elimination of HX to yield CO. The substitution effects on decomposition pathways of HFCO and HClCO are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462411
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  • 10
    Electronic Resource
    Electronic Resource
    Threshold photodetachment spectroscopy of C−5 (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 5479-5481 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461664
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