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  • 1
    Electronic Resource
    Electronic Resource
    Early stages of laser mixing process in Sb/Ge multilayer thin films (1993)
    Springer
    Applied physics 56 (1993), S. 132-137 
    Details
    ISSN: 1432-0630
    Keywords: 64.75.+g ; 78.90.+t ; 81.40.-z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The onset of mixing at the interfaces between Sb and Ge in thin multilayered films containing two or four layers has been studied. The films were irradiated with nanosecond laser pulses in order to trigger mixing, and in situ reflectivity measurements were used to follow the transformation in real-time. Cross sectional transmission electron microscopy analysis was used to study both the structure and the composition profile before and after irradiation. A threshold irradiation energy exists for the onset of mixing, below which roughening of the interface between the layers is observed, together with recrystallization of the surface Sb layer following melting. The results are consistent with a melting/diffusion process which is inhomogeneously nucleated at the interface between the top Sb and Ge layers. Once mixing is initiated an amorphous Sb-Ge layer of constant thickness is formed, corresponding to mixing along a well defined planar melt front. Voids are observed at the former Sb/Ge interface, which may be related to interfacial stress in the as-grown configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00517680
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  • 2
    Electronic Resource
    Electronic Resource
    Structural ripple formation in Ge/Sb multilayers induced by laser irradiation (1994)
    Springer
    Applied physics 58 (1994), S. 197-202 
    Details
    ISSN: 1432-0630
    Keywords: 64.75.+g ; 78.90.+t ; 81.40.−z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (λ=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332179
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    Paper (German National Licenses)
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