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  • 42.55.Rz  (1)
  • 68.55.−a  (1)
  • 1990-1994  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Plasma-mediated ablation of brain tissue with picosecond laser pulses (1994)
    Springer
    Applied physics 58 (1994), S. 493-499 
    Details
    ISSN: 1432-0649
    Keywords: 87.50.Hj ; 42.55.Rz ; 87.90.+y
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Plasma-mediated ablations of brain tissue have been performed using picosecond laser pulses obtained from a Nd:YLF oscillator/regenerative amplifier system. The laser pulses had a pulse duration of 35 ps at a wavelength of 1.053 µm. The pulse energy varied from 90 µJ to 550 µJ at a repetition rate of 400 Hz. The energy density at the ablation threshold was measured to be 20 J/cm2. Comparisons have been made to 19 ps laser pulses at 1.68 µm and 2.92 µm from an OPG/OPA system and to microsecond pulse trains at 2.94 µm from a free running Er:YAG laser. Light microscopy and scanning electron microscopy were performed to judge the depth and the quality of the ablated cavities. No thermal damage was induced by either of the picosecond laser systems. The Er:YAG laser, on the other hand, showed 20 µm wide lateral damage zones due to the longer pulse durations and the higher pulse energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01081080
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  • 2
    Electronic Resource
    Electronic Resource
    Pseudo-epitaxial C60 films prepared by a hot-wall method (1993)
    Springer
    Applied physics 56 (1993), S. 193-196 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.−a ; 81.15.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C60 evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C60 planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C60 is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00539473
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