ISSN:
1436-5073
Keywords:
carbonaceous surface contamination
;
native oxide layer
;
silicon wafer
;
angle-resolved XPS
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract The carbon-contaminated native oxide layer on a standard silicon wafer was investigated by angle-resolved signal ratio X-ray photoelectron spectroscopy (AR/SR/XPS). The results, based on intensity measurements of C1s , O1s , Si 2p 4+ and Sielemental 2p showed the carbon to be “ingested” into the oxide to a mean depth of 0.4 nm, and the oxide to consist of a fully oxidized layer (∼ 1 nm) on top, followed by a suboxidic layer (0.8 nm). The conclusions are that the depth location of the carbonaceous contamination is of cardinal importance for the correct interpretation of the oxidic data, and that for well studied systems routine measurements at two take-off angles suffice for quantitative results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01244160
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