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  • American Institute of Physics (AIP)  (3)
  • 1990-1994  (3)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 2456-2458 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Exact solutions are obtained for the anisotropic Bianchi type-I model in normal gauge for Lyra's geometry. The physical behavior of the models is examined in vacuum and in the presence of perfect fluids.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 35 (1994), S. 3230-3249 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The solution of the two-dimensional scalar Helmholtz wave equation is discussed in a domain consisting of N+2 boundaries wherein there is one central boundary and N circles are located symmetrically within a closed space such that the system as a whole has N-fold rotational symmetry. The general solution for this complicated domain has been found to reproduce the results corresponding to simpler structures with lesser number of boundaries. Furthermore, the rotational symmetry of the system is exploited to obtain the group-theoretic solution of the composite problem leading to symmetry-induced simplifications. The numerical results pertaining to the lowest and some of the higher modes are presented for N=1 and 2. The plot of the lowest eigenvalue as a function of eccentricity exhibits maximum for symmetric as well as antisymmetric modes whenever there are at least two inner boundaries. This behavior has universal character in the sense that the maximum shows up irrespective of the values of the geometrical parameters other than the eccentricity. The computations involving the group-theoretic aspects have been found to have fast convergence highlighting the significance of our approach to deal with the solution for a class of multidisciplinary problems coming within the purview of the Helmholtz equation.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3338-3340 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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