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  • American Institute of Physics (AIP)  (4)
  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    a-axis oriented epitaxial YBa2Cu3O7−x-PrBa2Cu3O7−y heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2484-2486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown YBa2Cu3O7−x-PrBa2Cu3O7−y heterostructures with the perovskite a axis normal to the surface of a variety of (001) oriented substrates using the pulsed laser deposition technique. X-ray diffraction studies indicate little or no formation of the traditional c-axis normal orientation usually nucleated on these substrates, while ion channeling, transmission electron microscopy (TEM), and Raman scattering studies reveal a highly ordered crystalline structure similar in quality to that obtained in the best c-axis oriented films. Superconducting transition temperatures, for current transport in the plane of the films, consistently exceed 80 K, but are probably lower than the optimum 92 K transition expected for YBa2Cu3O7−x due to the presence of growth twin boundaries between grains with the c axis oriented along the two substrate directions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104179
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial Y1Ba2Cu3O7−y/Y1−xPrxBa2Cu3O7−y heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 391-393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For a variety of device applications, junction devices in particular, we have demonstrated a heterostructure system of Y1Ba2Cu3O7−y/Y1−xPrxBa2Cu3O7−y which maintains epitaxy over the entire Pr composition range x=0–1. We have grown both trilayer and multiperiod superlattices which show nearly single crystalline helium ion backscattering minimum yields of 〈6% in the topmost layer. X-ray diffraction measurements indicate c-axis orientation by a transverse scan across (005) line with a full width at half maximum of 0.6° and 0.4° on MgO and SrTiO3 substrates, respectively. Scanning Auger electron depth profiles and cross-sectional transmission electron micrographs indicate abrupt Pr/Y interfaces within one unit cell and virtually no disruption of the layered structure at the interface. These results indicate the potential for the growth of excellent heterostructures and superlattices of the high-temperature superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103291
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  • 3
    Electronic Resource
    Electronic Resource
    Microwave properties of highly oriented YBa2Cu3O7−x thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1178-1180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed intra- and extra-cavity microwave frequency (1–100 GHz) measurements on high quality Y1Ba2Cu3O7−x superconducting thin films on (100) LaAlO3 substrates. The ∼0.3 μm thin films fabricated by the pulsed laser deposition technique exhibit superconducting transition temperatures 〉90 K, as determined by resistivity and ac susceptibility measurements, and critical current densities of 5×106 A/cm2 at 77 K. Moreover, ion beam channeling minimum yields of ∼3% were measured, indicating the extremely high crystalline quality of films grown on the LaAlO3 substrate. Microwave surface resistance values at 77 K for these films are found to be more than one to two orders of magnitude lower than for copper at 77 K for almost the entire frequency range explored. We postulate that the reason we observe such low surface resistances in these films is the virtual absence of grain and phase boundaries coupled with the high degree of crystallinity. Furthermore, we believe that the residual resistance measured below Tc is at present dominated by losses occurring in the substrate and the cavities rather than by losses intrinsic to the Y-Ba-Cu oxide superconductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103331
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  • 4
    Electronic Resource
    Electronic Resource
    All a-axis oriented YBa2Cu3O7−y-PrBa2Cu3O7−z-YBa2Cu3O7−y Josephson devices operating at 80 K (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O7−y-PrBa2Cu3O7−z-YBa2Cu3O7−y trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O7−z barrier layer. Critical current densities in excess of 104 A/cm2 have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105330
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