Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 3117-3119
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Shrinkage of ultralarge scale integrated circuit design rules to below 0.5 μm is placing new demands upon thin-film interconnect, especially for filling vias in insulating material to conductors lying below. Selective area deposition which will lead to enhanced via filling is investigated here using cluster beams, with a distribution peaking at 2200 atoms in average size, in which every cluster is positively ionized. A positive repelling voltage is placed on a conducting plate immediately behind test substrates which consist of an insulator with overlying conductive test patterns held at ground. Depositing metal selectively coated the conductive patterns while the repelling voltage essentially eliminated deposition onto insulating areas.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109155
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