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  • 1
    Electronic Resource
    Electronic Resource
    Re-emission of iron originally gettered by oxygen precipitates in a silicon wafer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1440-1441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the thermal stability of Fe originally gettered by oxygen precipitates. After low-temperature annealing for gettering, we annealed at higher temperatures. We found that the Fe concentration increases faster in gettered wafers than as-grown wafers. This shows that Fe was re-emitted from the bulk defect region faster than surface Fe precipitates decomposed. The Fe concentration increases with annealing time to the solid solubility level at the temperature used. These results suggest that gettering and the re-emission of Fe are two parts of a reversible reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354905
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  • 2
    Electronic Resource
    Electronic Resource
    A dc high-current low-energy electron beam gun (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4050-4052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dc high-current and low-energy electron beam gun has been developed. The maximum electron beam current is 63 A for an accelerating energy of 140 eV. The maximum ratio of the beam current to the discharge current is 78%. The ion current, which is extracted from the helium plasma produced by the electron beam, is 12.3 A. This value corresponds to the current density of about 7 A/cm2, which is the highest value among the ion sources in steady operation. The electron density of the plasma is estimated from the ion saturation current to be about 4.6×1013 cm−3, which corresponds to the degree of ionization of 21%. This gun will open the way for many electron beam applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349152
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of interdiffusion coefficients in GaAs-AlAs superlattices with laser Raman spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2112-2116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to estimate interdiffusion coefficients in superlattices (SLs) is proposed. The method is based on measurement of thicknesses of layers which remain without forming an alloy after an annealing that induced interdiffusion. The measurement was done from the frequency of phonons based on the Raman spectra. Values of interdiffusion coefficients obtained by the method were almost in the same order as those reported previously. It is also shown that the gallium atoms in GaAs-AlAs SLs diffuse more rapidly into AlAs layers than aluminum atoms which diffuse into GaAs layers. Interdiffusion coefficients decreased at first with the annealing time and increased slightly when the annealing was done for more than 1.5 h at 860 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348737
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  • 4
    Electronic Resource
    Electronic Resource
    Fundamental properties of intrinsic gettering of iron in a silicon wafer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 895-898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of intrinsic gettering of Fe were studied by measuring Fe-B complex concentration and interstitial Fe concentration in a denuded zone after isochronal or isothermal annealing followed by quenching using deep level transient spectroscopy. We calculated the Fe concentration as the Fe-B complex concentration plus the interstitial Fe concentration. Silicon wafers were contaminated with a surface Fe concentration of 4.2×1011 to 3.2×1013 cm−2 to show the relation between Fe concentration in the wafer and the temperature at which gettering occurs. Supersaturation of Fe impurities was found necessary for intrinsic gettering of Fe in the contamination range of 4.0×1012 to 3.5×1014 cm−3. Therefore, the gettering temperature is lower for low-level Fe contamination than for high-level contamination. The reduction of Fe concentration saturated with annealing time, which shows that the oxygen precipitates in the bulk defect region do not work as an infinite gettering sink. We found that the saturated Fe concentration follows a simple Arrhenius relationship, so that gettering stops at the thermal equilibrium concentration. We think that in intrinsic gettering, Fe precipitates preferentially in the bulk defect region when the Fe impurities supersaturate with decreasing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351764
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  • 5
    Electronic Resource
    Electronic Resource
    Interfacial reaction of Ta and Si rich tantalum silicides with Si substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 183-188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of tantalum silicide (TaSix) films deposited from a TaSix composite target are studied. Ta-rich (Si/Ta atom ratio, x=1.83) and Si-rich (x=2.60) films are deposited by dc magnetron sputtering on Si substrates. In Ta-rich films, a silicidation reaction occurs with annealing above 700 °C. As a result, Si composition, x, and silicide film thickness increases with consuming Si substrate. Stress changes abruptly from tensile to compressive with this reaction. This stress change leads to peeling in the Ta-rich film during the silicidation reaction. In Si-rich films, excess Si precipitates at the interface at 750 °C. However, the stress changes more gently in the Si-rich film and a more uniform TaSi2/Si interface is formed. Therefore, peeling can be avoided in Si-rich films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347112
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen effects on oxygen precipitation in Czochralski silicon crystals (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 913-916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270 °C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen-related aggregates are found to be related to enhanced oxygen precipitation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354858
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  • 7
    Electronic Resource
    Electronic Resource
    Lateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1327-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy was analyzed. The diffusion lengths of gallium and silicon species were estimated from carrier concentration profiles measured by Raman spectroscopy and thickness profiles. Using the diffusion lengths obtained, it is speculated that the diffusion materials are monomethylgallium and silylarsine. From their identical diffusion lengths, it was determined that there is no difference in diffusion materials between arsine and tertiarybutylarsine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354912
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  • 8
    Electronic Resource
    Electronic Resource
    S/N ratio of thin-film media estimated by computer simulation (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5578-5578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper derives a formula that shows a direct relationship between the noise spectrum and the magnetization configuration of a thin-film medium. This formula was obtained by Fourier transforming the down-track autocorrelation function of jMx-Mz, where Mx and Mz are the longitudinal and vertical components of magnetization. The formula takes into account not only the variance of the magnetization deviation, which is generally used to estimate media noise, but also the correlation between deviations in magnetization. This lets us calculate the noise power spectrum as well as the signal power, once the magnetization configuration in a medium is obtained, which means that the magnetic microstructures such as vortex, zig-zag domain, etc., are automatically included in noise calculation. To investigate the relationships between the noise properties and the magnetic properties of media with various anisotropy fields (Hk), axis orientation of easy magnetization, and stiffness constants (A), recorded magnetization configurations were simulated using the Landau–Lifshitz–Gilbert equation.1,2 The easy axis was oriented from uniaxial direction to random direction in plane. The simulated noise power spectra were maximized at a relatively long wavelength, which was varied by changing Hk, or the easy axis orientation. The noise power was strongly influenced by Hk and the axis orientation of magnetization. This confirms that preferential orientation along the longitudinal direction and a large Hk are effective for improving the S/N ratio. On the other hand, the stiffness constant less improved media noise than Hk and axis orientation, suggesting that the preferential orientation of the easy axis is more effective to reduce media noise than isolating magnetic grains.1
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353656
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray and thermal studies on the rotator phases of normal higher alcohols C17H35OH, C18H37OH, and their mixtures (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 631-641 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structure of the rotator phase and the phase transitions in n-alcohols C17, C18, and their mixtures are studied by differential scanning calorimetry (DSC) and by x-ray diffraction. Both the heating and cooling phase diagrams of the binary system are determined. During cooling, a new intermediate phase α' is observed under a temperature region of the usual rotator phase α. These α and α' phases are found to correspond to the rotator-II phase and the rotator-I phase, respectively, of n-paraffins. The dynamical crystal structure in the α phase is revealed by investigation of the diffuse scattering from the single crystal. The characteristic diffuse scattering observed originates from molecular fluctuations due to the translation along and the rotation around the molecular axes. Both modes of the molecular motions are studied separately from the diffuse scattering on the first and on the second layer lines. The translational disorder is described by the averaged relative translation between the nearest neighbor molecules; it is found to be as much as 20% of the repeat period 2.55 A of the polymethylene chain. On the other hand, it is found that the rotational disorder of the molecules is much smaller than the translational. The molecules are found to have a tendency to make their molecular planes parallel. It is suggested that the crystal in the rotator phase consists of domains, within which the molecules are ordered with respect to the orientations of their molecular planes but are making fairly active translations. Such structural model of the rotator phase is found to be quite consistent with that obtained in our recent computer simulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458414
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  • 10
    Electronic Resource
    Electronic Resource
    Compact, semi-sealed-off, high-repetition-rate transversely excited atmospheric-pressure CO2 laser with a surface-wire-corona preionization (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 3108-3109 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the design and operating characteristics of a reasonably compact, semi-sealed-off, high-efficiency transversely excited atmospheric-pressure CO2 laser operating at prfs 〈150 Hz by a stable discharge system using a new type of surface-wire-corona preionizer. An efficient laser operation at a slope efficiency of 10.2% with a maximum average power of 42 W (100 Hz) has been achieved from a discharge volume of 57.5 cc with an active length of 26 cm. With CO and H2 as additive, (approximately-greater-than)2.1×106 shots has been achieved on a single gas fill and an estimated half-power lifetime of 2×107 shots made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142165
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