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  • American Institute of Physics (AIP)  (5)
  • 1990-1994  (5)
  • 1
    Electronic Resource
    Electronic Resource
    A comparison of the thermal and near band-gap light-induced recoveries of EL2 from its metastable state in semiinsulating GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5004-5008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse transition from the EL2 metastable state to the ground state is achieved by thermal annealing above 140 K. An optical recovery of the ground state photoresponse (1–1.3 eV) can be also done exciting with near band-gap light. We present herein a photocurrent study of the photoquenching transients starting from either a thermal recovery situation or an optically recovery one. It is seen that the recovered states are not the same for both of them. While the thermal recovery restores the ground state of EL2, the optical recovery restores another state, labeled EL2r, which gives a different photoquenching transient as compared to the ground EL2 level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353820
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of In on Si local vibrational modes in InxGa1−xAs (0≤x≤0.12) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7797-7804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local vibrational modes (LVM) of Si in substitutional sites have been observed by resonant Raman spectroscopy in highly doped (≥8×1018 cm−3) InxGa1−xAs layers, either relaxed or under strain, on [100] GaAs substrates. The peak frequency ωLVM of the Si on Ga site (SiGa) LVM in unstrained samples shifts to lower values with increasing In content. For x≤0.10 this shift is clearly higher than expected from a linear interpolation between the measured values in the binaries. The comparison between the SiGa peak frequency measured in both a full strained layer and a relaxed layer with similar composition provides a rough determination of the deformation potentials for the SiGaLVM in these layers: q/ω2LVM=−2.7±1 and p/ω2LVM=−2.5±1. As the In content becomes higher the width of the SiGa peak increases much more than that of the GaAs-like longitudinal optical-phonon peak, revealing the splitting due to the loss of local symmetry introduced by the In. New calibration factors for the Si-defect concentrations have been deduced, which allow estimation of the solubility limit for the Si incorporation in substitutional positions, which ranges from 2.3×1019 to 2.6×1019 cm−3 for the layers at the growth conditions used. The analysis of the integrated intensity of the LVM Raman peaks indicates that the degree of electrical compensation is clearly reduced for increasing In up to x≤0.05, due to both an increase of the solubility limit for Si in these layers and a saturation or slight reduction of the SiAs-related defect concentrations. This conclusion is also supported by Hall and plasmon measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358521
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  • 3
    Electronic Resource
    Electronic Resource
    Photocurrent study of the influence of photogenerated carriers on the EL2*-EL2 transformation in semi-insulating GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1253-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optically induced EL2*-EL2 transformation is studied by photocurrent measurements, allowing the monitorization of the free-carrier generation during the near-band-gap (NBG) recovery excitation. The efficiency recovery spectrum is found to be anticorrelated with the NBG photocurrent spectrum. This observation rules out the possibility of a free-carrier assisted process as the main mechanism accounting for the NBG induced EL2*-EL2 reverse transformation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107421
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  • 4
    Electronic Resource
    Electronic Resource
    Relaxation of InGaAs layers grown on (111)B GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3212-3214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation behavior of InGaAs layers grown by molecular beam epitaxy on (111)B GaAs is investigated and compared with simultaneously grown (100) reference samples. Surface morphology, defect microstructure, and optical quality of the layers during the relaxation process are studied by Nomarski interference contrast, transmission electron microscopy, low-temperature photoluminescence, and Raman spectroscopy. These techniques reveal an inhomogeneous and anisotropic relaxation in (111) samples. In (111) samples, the increase of critical thickness and the slower relaxation dependence on thickness, as compared with the (100) reference samples, is discussed © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112415
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  • 5
    Electronic Resource
    Electronic Resource
    Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric-field-induced Raman scattering by longitudinal optical (LO) phonons has been used to study the surface Fermi level position in InSb layers grown by molecular beam epitaxy on (100) GaAs. From the analysis of a variety of layers it is found that the LO phonon scattering intensity, relative to that of intrinsic two-LO phonon scattering, decreases with increasing optical power density in n-type samples, but remains constant in p-type and undoped layers, which are residual p type. The power dependence of the relative LO phonon intensity for n-type doping is shown to be caused by a surface electric field, the strength of which is reduced upon increasing illumination due to screening by photogenerated carriers. As this effect is only found in n-type layers, we conclude that the surface Fermi level is pinned at the valence band thus giving rise to a sizeable surface electric field in n-type but not in p-type material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110039
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