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  • American Institute of Physics (AIP)  (30)
  • Taylor & Francis
  • 1990-1994  (30)
  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CoSi2 on (111)Si inside miniature-size oxide openings by rapid thermal annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4282-4285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of CoSi2 on (111)Si inside two-dimensional and linear oxide openings by rapid thermal annealing has been investigated by transmission electron microscopy. Both annealing temperature and time were found to be critical in obtaining 100% epitaxy. The size of oxide openings and annealing temperature were found to exert strong influences on the morphology of epitaxial CoSi2 on silicon. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. The change in morphology of epitaxial CoSi2 with the size of oxide openings in the present study indicated that interfacial energy and/or stress, in addition to the surface energy, are important in determining the morphology of epitaxial CoSi2 on (111)Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348400
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  • 2
    Electronic Resource
    Electronic Resource
    Hygrothermal stresses in a solid: Constant surface stress (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 171-188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hygrothermal stresses in a solid with a boundary condition of constant surface stress have been investigated. Three simple geometries: thin slab, sphere, and cylinder, have been considered. The effect of geometry on temperature distribution and moisture absorption inside the solid from small to large follows the sequence: thin slab, cylinder, and sphere. If the temperature on the surface is a function of time whereas the moisture on the surface remains constant, the location of plastic deformation appears in the interior region during the coupled transfer process. On the other hand, when the moisture absorption is a function of time whereas the temperature is kept constant, the plastic deformation always occurs on the surface if possible. The maximum shear stress (σz−σr)/2 of cylinder is similar to the maximum shear stress σyy/2 of thin slab, and the maximum shear stress (σr−σt)/2 of sphere is similar to the maximum shear stress (σr−σθ)/2 of cylinder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354134
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical stresses in composite circular cylinders (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2239-2248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical stresses in a composite circular cylinder have been investigated. The mass transfer follows the diffusion equation which was solved using the Laplace transformation technique. Both diffusion processes of constant average concentration and constant surface concentration are considered. The stresses arising from the mass transfer are derived. Two situations are considered: one is plane strain and the other is zero axial force. The largest maximum shear stress occurs at the position near the surface in the outer medium. The positions having the largest maximum shear stress are most probable to have plastic deformation. The outer medium cannot avoid plastic deformation during the mass transfer at constant average concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353128
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  • 4
    Electronic Resource
    Electronic Resource
    Impurities and defects of high-Jc YBa2Cu3Ox superconductor with flux jumps (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7492-7495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of a highly textured bulk YBa2Cu3 (123) superconductor, with the high-transport Jc (≥ (R18)3.7×104 A/cm2 at 77 K) and flux jumps (T〈15 K), were characterized by x-ray diffraction, polarized optical microscopy, scanning electron microscopy, and scanning transmission electron microscopy. It was found that the grains of the 123 superconductor are preferentially oriented along the a-b plane of the 123 phase. The Y2BaCuO5 and CuO particles are dispersed uniformly in the 123 matrix, and the highly dense twins run through the matrix everywhere. Some irregular-shaped BaCuO2-CuO mixtures were observed at the 123 grain boundaries. The aligned 123 crystals and microstructural defects in the 123 matrix are considered to be responsible for the high-Jc value and flux jumps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349746
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  • 5
    Electronic Resource
    Electronic Resource
    In situ formation of Y-Ba-Cu-O epitaxial films by 40.68-MHz rf magnetron sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2731-2733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in situ epitaxial growth of the Y-Ba-Cu-O films on MgO (001) was carried out by 40.68- MHz rf magnetron sputtering with an on-axis single target. It appeared that the rf discharge strongly affected film composition, crystallinity, superconductivity, and reproducibility. Highly orientated superconducting films with the c-axis perpendicular to the substrate surfaces and having zero resistance transition temperature of 78.2 K were obtained without a post-annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348628
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion-induced stresses in a long bar of square cross section (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3211-3219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion-induced stresses in a long bar of square cross section have been investigated. Two mass transfers consisting of constant average concentration and constant surface concentration were considered. The concentration distribution was obtained in an analytic form. The displacement and stress fields were obtained numerically using a Jacobi iterative method. The maximum stress is located at the corner for constant average concentration and at the midedge for constant surface concentration. A comparison of stresses built up in the bar of a square cross section and in a thin slab was made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352965
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  • 7
    Electronic Resource
    Electronic Resource
    Nucleation of dislocations in SiGe layers grown on (001)Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3968-3977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive x-ray-diffraction study of the variation of the tilt angle between a Si1−xGex layer and the (001) Si substrate is presented. Such measurements provide the basis of a new method for determining the nucleation activation energy of misfit dislocations. A detailed model, independent of the particular relaxation mechanism, is derived which relates the tilt angle to the nucleation activation energy on the different slip systems and to the density of misfit dislocations. The model has been applied to the modified Frank–Read mechanism observed in graded samples. Relaxation occurs in such samples for strain in the range 0.002≤ε≤0.006 with an activation energy of about 4 eV. The critical thickness for growth of a strained layer is shown to be smaller when the substrate is miscut than when it is well oriented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356992
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  • 8
    Electronic Resource
    Electronic Resource
    Measurements of alloy composition and strain in thin GexSi1−x layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8098-8108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The utility of Raman spectroscopy for the simultaneous determination of composition and strain in thin GexSi1−x layers has been investigated. Using data from the literature and new data for the strain shift of the Si-Si phonon mode presented here, we show how Raman spectra provide several different means of measuring composition and strain in samples as thin as 200 A(ring). We demonstrate that for largely relaxed layers with compositions near x=0.30, Raman scattering can measure the composition, x, with an accuracy of ±0.015 and the strain, ε, with an accuracy ±0.0025. The accuracy of the alloy composition obtained from Raman spectra is comparable or, in the case of very thin layers, superior to that measured by other techniques such as x-ray diffraction, electron microprobe, and Auger electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356554
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  • 9
    Electronic Resource
    Electronic Resource
    Hole subband in p-type channel of semiconductor heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7998-8000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the characteristics of semiconductor surface capacitance, an experimental model is presented for evaluating the hole subband structures in the p-type channel of semiconductor heterostructures. For an n-type InSb metal-oxide-semiconductor sample, the capacitance-voltage spectroscopy is measured and the hole subband structure is derived with using the model presented. The result shows that the Fermi level is always pinned near the bottom of the hole subband, which is attributed to the large density of states of the hole subband. Relevant parameters are also obtained for the hole subband including the subband energy, Fermi level, inversion layer width, and depletion layer width, etc. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357914
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  • 10
    Electronic Resource
    Electronic Resource
    A normal incidence two-color p-type compressive strained-layer In0.4Ga0.6As/GaAs quantum well infrared photodetector for 3–5 μm and 8–12 μm detection (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6009-6011 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A normal incidence p-type compressive strained-layer In0.4Ga0.6As/GaAs quantum well infrared photodetector (PSL-QWIP) grown on (100) semi-insulting GaAs substrate with molecular beam epitaxy technique for 3–5 μm mid-wavelength infrared and 8–14 μm long-wavelength infrared detection was demonstrated for the first time. This PSL-QWIP shows a broadband double-peak response between 8 and 9 μm wavelength by utilizing the resonant transport coupling mechanism between the heavy-hole type-I states and the light-hole type-II states. Using the compressive strain in the InGaAs quantum well, normal incident absorption was greatly enhanced by reducing the heavy-hole effective mass and increasing density of states of off-zone center. Maximum responsivities of 93 mA/W and 30 mA/W were obtained at peak wavelengths of λp1=8.9 μm and λp3=5.5 μm, respectively, with Vb=1.6 V. Detectivity at λp1=8.9 μm was found to be 4.0×109 cm(square root of)Hz/W at Vb=0.3 V and T=75 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358352
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