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  • American Institute of Physics (AIP)  (3)
  • Springer  (2)
  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4797-4807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After ex situ etching with various solutions of hydrofluoric acid (HF) and ammonium fluoride (NH4F) Si(111) samples are transferred into ultrahigh vacuum with an ultrafast load-lock and characterized by scanning tunneling microscopy (STM): Concentrated HF selectively removes any surface oxide and, thus chemically prepares the initially burried, isotropically rough Si/SiO2 interface while highly buffered HF (i.e., NH4F) attacks bulk silicon anisotropically. After a rapid homogenization of the chemical surface termination (HF: various hydrides, fluorine, ...) towards a perfect, unreconstructed monohydride phase, Si(111)-(1×1):H, NH4F etching leads to a time-dependent transformation of isotropic roughness into a pattern of triangular etch defects with monohydride steps perpendicular to 〈2¯11(approximately-greater-than) due to a preferential removal of lower-coordinated atomic defect sites. A predominant atomic step structure due to sample miscut (vicinal surfaces with azimuth ≠〈2¯11(approximately-greater-than)) can oppose the anisotropic NH4F etching: At low step density (small polar angle of miscut) a meandering of atomic steps with straight monohydride portions is observed while at high step density strong step-step interaction counterbalances anisotropic removal and forces an etching by a homogeneous flow of (nonmonohydride) steps along the macroscopic misorientation. Local findings obtained with STM are compared to macroscopically averaged results from a simultaneous quantitative analysis of low-energy electron diffraction profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353845
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of large-area beam attacks on surfaces and testing of etching reactions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 48-55 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus has been constructed to analyze the particle flux of positive ions on surfaces from dry etching reactors. The particle flux can emerge from a great variety of reactive ion etching systems or from reactive ion beam etching sources. The particle beam passes through a small orifice with a diameter of 100 μm. A differentially pumped quadrupole mass spectrometer with a specially designed ion transfer optics performs the energy analysis of positive ions. The energy range can be varied between 0 and 500 eV with a resolution of 1%. The angular distribution measurements of the particle flux are carried out varying the inclination of the mass analyzer by ±20° with the vertex lying centrally in the sampling orifice. The angular resolution is about 1°. Rotation of the source on top of the apparatus and translation over ±10 cm in xy direction and 15 cm in z direction perpendicular to it is provided in order to assure fully local resolution. The electrical properties of the orifice-ion optics system is discussed with respect to their influence on ion trajectories. The purpose of the apparatus is to provide data on particle fluxes relevant for microelectronic processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142741
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  • 3
    Electronic Resource
    Electronic Resource
    Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot-profile analysis of low-energy electron diffraction (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1321-1323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After wet chemical oxide removal and fast transfer into ultrahigh vacuum the Si(111)/SiO2 interface structure of wafers from semiconductor-industrial processes (polishing, oxidation, annealing) is investigated with scanning tunneling microscopy (STM): Regular terrace arrays with atomic step height are visible with STM after technological ex situ preparation. The local step structure varies, kinks at step edges occur, and irregular islands are formed with increasing oxide thickness and oxidation rate. The local STM information is compared to macroscopically averaged results provided by electron diffraction (spot-profile analysis of low-energy electron diffraction).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107330
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  • 4
    Electronic Resource
    Electronic Resource
    Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100) (1992)
    Springer
    Applied physics 54 (1992), S. 265-269 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323848
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved observation of CVD-growth of silicon on Si(111) with STM (1993)
    Springer
    Applied physics 57 (1993), S. 491-497 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.Ce ; 61.16.Di
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Scanning tunneling microscopy is used to study the epitaxial growth of silicon on Si(111)-(7×7) by Chemical Vapour Deposition (CVD) of disilane (Si2H6) at elevated substrate temperatures directly during the growth process. Different kinetic processes, as island nucleation, growth and coarsening and step flow have directly been imaged as a function of temperature and Si2H6 flow. On a substrate with a low defect concentration several growth modes depending on the flux and the total coverage are distinguished: the formation of multi-level islands as a transient mode leaving the substrate partially uncovered up to 20 bilayers, a transition to layer-by-layer growth when the multi-level islands initially formed coalesce and the formation of three-dimensional islands with tetrahedral shape at higher growth rates which are only metastable due to the presence of hydrogen at the surface. The equilibrium shape of two-dimensional islands is a hexagon whereas the kinetically influenced shape during growth is triangular.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331747
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