Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 168-170
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed a redshift process of luminescence wavelength in an as-prepared porous silicon layer. Si—H bonds of a significant concentration are gradually replaced by Si—O bonds when porous silicon is exposed to air at room temperature, which coincides well with desorption of hydrogen from the silicon surface. SiH2 termination plays an important role in the emission process, and the surface passivation of the porous silicon layer is important to get effective and stable luminescence.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110388
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