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  • American Institute of Physics (AIP)  (9)
  • Institute of Physics  (7)
  • Blackwell Publishing Ltd  (1)
  • 1990-1994  (17)
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  • 1
    Electronic Resource
    Electronic Resource
    Role of coherency in the elastic behavior of composition-modulated superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4573-4580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the role of coherency in the elastic behavior of composition-modulated superlattices of fcc metals by atomistic computer simulations using Lennard–Jones potentials. Structures, energies, and elastic properties of incoherent superlattices are computed as a function of the compositional modulation wavelength along [001] and compared with those of coherent superlattices. Both superlattice types were taken to have a 10% lattice parameter mismatch between the two materials. The incoherent superlattices, as compared to coherent superlattices, were found to be more structurally disordered and exhibited greater elastic anomalies, which cannot be accounted for by the overall dimensional changes of the superlattices alone. High- and low-frequency elastic constants are briefly compared. It is proposed that increasing the structural disorder in the superlattices by increasing the lattice-parameter mismatch or by introducing a relative rotation between the two materials will enhance all of the elastic anomalies even further.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346164
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  • 2
    Electronic Resource
    Electronic Resource
    High-speed 1.3-μm InGaAsP buried crescent lasers with Fe-doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1061-1063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating InP layers grown by low-pressure organometallic vapor phase epitaxy with tertiarybutylphosphine have been used as a current block layer for high-speed 1.3-μm InGaAsP buried crescent lasers. The performance characteristics of such lasers are comparable to those of lasers with a PH3-grown Fe-doped semi-insulating InP current blocking layer over a measurement temperature range of 25 to 85 °C. A 3-dB modulation bandwidth of 17.5 GHz has been obtained at room temperature and a cw bias current of 100 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350400
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  • 3
    Electronic Resource
    Electronic Resource
    High-rate (∼50-A(ring)/s) deposition of ZnO films for amorphous silicon alloy solar-cell back-reflector application (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1692-1694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Back reflectors have been fabricated by the deposition of ZnO films on textured Ag films. High deposition rates of ∼50 A(ring)/s have been achieved by the dc magnetron sputtering technique. The ZnO target used has been prepared in our laboratory. Amorphous silicon alloy solar cells have been deposited on the ZnO/textured Ag back reflector. Control samples have been prepared by the deposition of identical cells on the same back reflector, but in which the ZnO films have been prepared by a low-rate ∼5-A(ring)/s rf sputtering process. The short-circuit current density, which has been used as the primary test parameter for evaluating the back reflectors, is slightly superior in the case of the high-rate ZnO back reflector. The high-rate deposition process is, therefore, attractive for large-volume production application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349538
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  • 4
    Electronic Resource
    Electronic Resource
    Structure and energy of general grain boundaries in bcc metals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 185-196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The zero-temperature energies and equilibrium volume expansions of point-defect-free asymmetrical grain boundaries (GBs) in bcc metals are determined using both a many-body potential fitted for Mo and a Johnson-type pair potential spline-fitted for α-Fe. The asymmetrical combinations of lattice planes considered involve one of the five densest planes of the bcc lattice on one side of the interface and a commensurate higher-index plane on the other. As in similar recent work on fcc metals, the two asymmetrical pure tilt boundaries obtained for any given combination of lattice planes give rise to pronounced energy cusps. When a twist component is added to the asymmetrical GB, thus forming a general (or "asymmetrical twist'') boundary, the energy and planar unit-cell area increase due to the introduction of screw dislocations. A comparison with earlier work on symmetrical GBs in bcc metals suggests that, except for the densest lattice planes, asymmetrical boundaries may actually have lower energies than symmetrical ones. The underlying causes are elucidated via a comparison with recent simulations of free surfaces and with the random grain-boundary limit (in which the interactions of the atoms across the interface are assumed to be entirely random).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347741
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  • 5
    Electronic Resource
    Electronic Resource
    A broken-bond model for grain boundaries in face-centered cubic metals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3221-3236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interrelation between the number of nearest-neighbor atomic bonds broken upon formation of a grain boundary in an fcc metal and the related zero-temperature boundary energy is investigated by atomistic simulation. Using both a Lennard–Jones and an embedded-atom-method potential, the structures and energies of symmetrical and asymmetrical tilt and twist boundaries are determined. As in free surfaces, a practically linear relationship between the nearest-neighbor miscoordination per unit area of the grain boundary and the related interface energy is obtained. The so-called random-boundary model, in which the interactions across the interface are assumed to be entirely randomized, is shown to provide a basis for understanding the role of broken bonds in both high-angle grain boundaries and free surfaces, thus naturally permitting the analysis of ideal cleavage-fracture energies. A detailed study of low-angle boundaries shows that only the dislocation cores—but not their strain fields—give rise to broken bonds. The complementarity between the dislocation model of Read and Shockley for low-angle boundaries and a broken-bond model for high-angle boundaries is thus elucidated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346373
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  • 6
    Electronic Resource
    Electronic Resource
    Surface-stress-induced structure and elastic behavior of thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2081-2083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computer simulations of unsupported (111), (001), and (011) thin films of gold, using an embedded-atom-method potential, demonstrate a direct correlation between the bulk-surface stress and the film dimensions. The considerably more complex elastic behavior, by contrast, appears to be dominated by the atomic structure of the film surfaces, and not by the stress-induced anisotropic lattice parameter changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105017
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  • 7
    Electronic Resource
    Electronic Resource
    A COMPARISON OF QUALITY ATTITUDES IN THE USA AND JAPAN: EMPIRICAL EVIDENCE (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of management studies 28 (1991), S. 0 
    Details
    ISSN: 1467-6486
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-6486.1991.tb00981.x
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  • 8
    Electronic Resource
    Electronic Resource
    Formalism for the calculation of local elastic constants at grain boundaries by means of atomistic simulation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2370-2379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new formalism for use in atomistic simulations to calculate the full local elastic-constant tensor in terms of local stresses and strains is presented. Results of simulations on a high-angle (001) twist grain boundary are illustrated, using both a Lennard–Jones potential for Cu and an embedded-atom potential for Au. The two conceptionally rather different potentials show similar anomalies in all elastic constants, confined to within a few lattice planes of the grain boundary, with an especially dramatic reduction in the resistance to shear parallel to the grain-boundary plane. It is found that the primary cause of the anomalies is the atomic disorder near the grain boundary, as evidenced by the slice-by-slice radial distribution functions for the inhomogeneous interface system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345533
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  • 9
    Electronic Resource
    Electronic Resource
    Anomalous elastic behavior in superlattices of twist grain boundaries in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6747-6759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic constants and moduli of superlattices of high-angle twist grain boundaries on the two densest crystallographic planes of silicon are calculated using Stillinger and Weber's three-body potential. While in both cases the Young's and shear moduli are found to be softened, the Poisson ratios and some elastic constants, in particular C33 (in the direction of the interface-plane normal), are found to be hardened. It is shown that the elastic behavior is determined by the structural disorder at the interfaces, and that it cannot be understood in terms of the dimensional changes of the system alone. A comparison with similar calculations for metallic superlattices elucidates the role of the covalent nature of bonding of silicon on its elastic behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345113
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative study of the contribution of deep and shallow levels to the compensation mechanisms in annealed InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5538-5545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of heat treatment under phosphorus atmosphere on the balance of electronic levels by capacitance-voltage and deep level transient spectroscopy measurements. A series of special samples was annealed under the conditions which we are normally using for the processing of nominally undoped semi-insulating (S.I.) InP. It is shown explicitly that in this annealing process the reduction of the free-carrier concentration is predominantly caused by a reduction of the net concentration of defects related to shallow levels. Furthermore, we have identified in the annealed material two defects related to electron traps with activation energies of 400 and 600 meV, which are created or incorporated during the annealing with limited concentrations of about (0.5–1)×1015 cm−3. On the basis of these results we conclude that for the compensation mechanism in the annealed nominally undoped S.I. InP only a concentration below 1015 cm−3 of defects with a midgap energy level is necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354212
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