Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 300-302
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Simple holographic lithography and wet etching have been used to fabricate strain-induced quantum well dot structures. Lateral confinement was generated in a GaAs quantum well (QW) by etching a double-exposed grating pattern into a pseudomorphic, strained layer of In0.3Ga0.7As which overlies the QW. By spacing three QWs of different widths at varying depth from the stressor, lateral strain confinement and vertical strain propagation are directly resolved. We have observed at 14 meV redshift in the photoluminescence spectra for the QW located 22 nm away from the stressors and have confirmed that the strain propagation depth along the material growth direction is comparable to the lateral dot dimension.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107918
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