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  • American Institute of Physics (AIP)  (33)
  • Inter-Research  (9)
  • American Association for the Advancement of Science (AAAS)  (5)
  • 1990-1994  (47)
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  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced fluorescence and emission spectroscopic study of magnetic field effects in a low-pressure etch plasma (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1683-1689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of a magnetic volume field B on the chemical and physical properties of a 13.56-MHz CF4 plasma was studied by laser-induced fluorescence (LIF) and by optical emission spectroscopy (OES) at typical low-pressure etching conditions. The measurements were carried out in a commercial magnetron with a modified magnetic field configuration allowing a continuous variation of B up to a maximum field strength of 80 G. As indicated by LIF the densities of the CF2 radicals in the electronic and vibrational ground state increased by about a factor of 3 when the maximum B field was applied. No concentration gradients were detected by spatially resolved LIF. A similar increase as for CF2 was observed for actinometrically normalized F emission intensities. The ratios of CF2 LIF and CF2 OES signals are compared with the emission intensity behavior of argon, admixed to a small percentage, which suggest an increase of the electron induced production rates (electron densities) significantly stronger than that of the radical concentrations. This phenomenon is explained by simple considerations concerning B dependent production and losses of ions and radicals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351397
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  • 2
    Electronic Resource
    Electronic Resource
    Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 693-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractory metal disilicides TiSi2 and TaSi2 were investigated for their usefulness as dopant diffusion sources. During furnace annealing and rapid thermal processing, strong decomposition reactions occur between the dopants D (B or As) and the respective silicide (MSi2) to form MxDy compounds. With the help of special sample preparation methods and various analytical techniques, the compound phases TiB2, TiAs, TaB2, and TaAs were unambiguously detected. The fraction of freely diffusing B in TaSi2 is determined to be below 5% of the total dose; by far, the major part of the dopant is bound within the TaB2 phase detected. Careful sample preparation and analysis of secondary-ion-mass spectrometry profiles is necessary to avoid artifacts caused by these compound particles. The MxDy-compound formation has detrimental consequences: The solubility of arsenic and even more of boron in TiSi2 and TaSi2 is limited to rather low-concentration levels (e.g., B in TaSi2: 4 × 1018 B/cm3 〈 CB(900 °C) 〈 1.6 × 1019 B/cm3) and the outdiffusion into poly- or monocrystalline silicon is strongly retarded. Also, the low interface dopant concentrations achievable result in unacceptably high values of contact resistance. The observations on metal-dopant- (M-D-) compound formation are demonstrated to agree well with the predictions from thermodynamic calculations on the respective M-Si-D system. The effects on junction formation are compared to the case of WSi2 and CoSi2, which, from a parallel study, are known not to form compounds. In all cases these comparisons support our statements on the tremendous impact of M-D-compound formation, because much improved data on diffusion and junction formation were obtained for CoSi2 and WSi2. The same holds for a comparison on contact resistances for silicide diffused junctions, which was performed for TiSi2 and CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349625
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  • 3
    Electronic Resource
    Electronic Resource
    Energy analysis of neutral atoms in broad oxygen ion beams by Doppler-shift measurements (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5428-5434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical emission spectroscopy has been established as a valuable method for the analysis of broad oxygen ion beams. The ion beams used for reactive ion-beam etching have been investigated in the energy range of 300–1500 eV. From survey spectra O+2 molecules and neutral O atoms are identified as main emitting species. Concerning the occurrence of emission lines the beam spectrum resembles that obtained from an O2 rf plasma. The intensity ratios however are strongly different within both spectra. Whereas electron impact is the main source for electronic excitation in ordinary etch plasmas, heavy particle collisions are suggested to play an important role in the investigated ion beams. Beam-induced emissions of atomic oxygen neutrals were recorded at high resolution of 0.1 A(ring). The O emission lines were found to be triple peaked. One peak at the unshifted wavelength and two Doppler-shifted peaks could be resolved. The absolute values of the wavelength shifts are well correlated to the energies of the initial ions extracted from the ion source by a grid optics. Besides slow atoms, atoms moving with the full beam energy as defined by the ion extraction conditions and with only half the beam energy are detected. The observed Doppler structure is attributed to charge exchange and dissociative collisions taking place in the gas phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346998
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  • 4
    Electronic Resource
    Electronic Resource
    Fragmentation processes in reactive molecular ion beam etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7517-7520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a reactive ion beam etching system, gas phase collision processes in the reaction chamber were identified from the energy distributions of positive ions originating from source plasmas with O2, SF6, and CF4 as feed gases. The ion energy distributions are determined by a quadrupole mass spectrometer for main beam energies below 500 eV at typical working pressures in the reaction chamber of 1–10×10−2 Pa. Besides near thermal ions a considerable amount of high energy fragmentation products were detected for a number of primary molecular ions. The relative intensities of these products compared to the parent ions suggest a non-negligible influence of gas phase dissociation processes on the etch or deposition characteristics of molecular ion beams and the resulting properties of surfaces treated under elevated working pressure conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354977
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  • 5
    Electronic Resource
    Electronic Resource
    The perpendicular anisotropy of multilayered Fe/Tb films (abstract) : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6230-6230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer Fe/Tb films were produced by rf sputtering. The thickness ratio of the Fe and Tb single layers was chosen in such kind to give an overall concentration of about 20 at. % Tb. Homogenous amorphous films of such a composition are well known for their perpendicular anisotropy. The investigations in the magnetic properties revealed that the multilayer films showed perpendicular anisotropy much stronger than the homogenous amorphous films. The maximum of the perpendicular anisotropy was found for multilayers with thickness combination of the single layers tFe=1.0 nm, tTb=1.5 nm. The perpendicular anisotropy increases strongly with increasing substrate temperature during rf sputtering. From the results of VSM measurements of the magnetic moment of the samples we must conclude that the Tb single layers are magnetically ordered even at room temperature. The magnetic moment of the Tb film is antiparallel coupled to the moment of the Fe film. The range of the coupling is at least 2 nm. As long as the multilayer films with various thicknesses of the single layers show perpendicular anisotropy, this anisotropy is rather independent of the thickness of the Tb layers but shows a linear dependence of the reciprocal of the thickness of the Fe layers. The magnetic investigations were accompanied by structural investigations. X-ray diffraction shows very clearly the superlattice of the multilayer films. Observations of cross sections of the multilayers by high-resolution electron microscopy revealed very sharp interfaces between Fe and Tb. The Tb films are crystallographically well ordered, whilst the Fe films showed only a nanocrystalline order. Mösbauer investigations are carried out to give an insight in the influence of the Tb films on the hyperfine field at the Fe atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350004
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  • 6
    Electronic Resource
    Electronic Resource
    Micromagnetic structure of domains in Co/Pt multilayers. I. Investigations of wall structure (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7431-7437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of the micromagnetic structure of domains and domain walls in Co/Pt multilayer films is reported. Magneto-optically written domains have been imaged in a scanning transmission electron microscope by using the modified differential phase contrast mode of Lorentz electron microscopy. These have been compared with computer-simulated images based on a two-dimensional model of a circular, perpendicular magnetized domain with a Bloch-like wall structure. Agreement is found for the domain and stray field contrast, but the absence of wall contrast in the experimental images indicates a more complex wall structure in the multilayer than was assumed by the model. In a further series of calculations the magnetic microstructure of a Co/Pt multilayer was modeled by solving the Landau–Lifshitz–Gilbert equations. These suggest that the wall structure varies throughout the thickness of the multilayer, allowing significant saving of magnetostatic energy through the establishment of flux closure paths close to the walls, and are consistent with experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354964
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  • 7
    Electronic Resource
    Electronic Resource
    Direct writing of gold nanostructures using a gold-cluster compound and a focused-ion beam (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7588-7591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-coated solid films of the gold-cluster compound Dodeca-(triphenylphosphine), hexa(chloro)pentapentacontagold Au55(PPh3)12Cl6 are irradiated with a focused 20-keV Ga+ focused-ion beam. The writing speeds on the substrate were ranging from 50 up to 2000 μm/s. This treatment locally decreases the solubility of the metalorganic precursor layer in CH2Cl2. Removal of the nonirradiated part of the surface layer with this solvent, followed by thermal decomposition of the remaining metalorganic nanostructures, leads to conducting gold lines. The width (150–360 nm) and height (20–80 nm) of these metallic lines depend on the ion dose and the original film height of the gold compound. The possible interactions leading to the fixation are briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354985
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  • 8
    Electronic Resource
    Electronic Resource
    Micromagnetic structure of domains in Co/Pt multilayers. II. Investigations of domain structures in written marks (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7438-7442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis is presented of the detailed effects of varying the write parameters in Co/Pt multilayer films. Domains written thermomagnetically by laser modulation have been imaged using the modified differential phase contrast mode of Lorentz electron microscopy. The effects of different laser powers and bias fields were investigated. While the domain size increases with laser power, the bias field is found to have a profound effect on domain regularity. The periodicity of the irregular circumference of the domains written at high-bias fields closely resembles the mean repeat in the ac-demagnetized state suggesting that it arises as a relaxation phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354965
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of the micromagnetic structure of cross-tie walls in permalloy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2447-2452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modified differential phase contrast (MDPC) mode of Lorentz electron microscopy was used to study the micromagnetic structure of cross-tie walls in permalloy. The distribution of magnetic induction along these walls is characterized and studied in detail by vector mappings calculated from MDPC image pairs. The wall thickness of the cross-tie wall is determined by fitting the calculated image signal of an analytical function to the MDPC wall profiles. A pronounced dip in the wall width is found at the center of the vortex structure of the cross-tie wall. The results are compared to theoretical calculations by Nakatani, Uesaka, and Hayashi, Jpn. J. Appl. Phys. 28, 2485 (1989).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353102
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  • 10
    Electronic Resource
    Electronic Resource
    Diffusion barrier properties of Ti/TiN investigated by transmission electron microscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2127-2132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed analytical transmission electron microscopy investigations were performed on a well-known diffusion barrier system for very-large-scale integration metallization. It will be demonstrated that interfacial reactions are of great importance for the barrier mechanism. Both Ti and TiN act as diffusion barrier for the semiconductor and the metallization, respectively. For an aluminum-based metallization, TiN has a "spongelike'' function due to its ability to absorb several amounts of aluminum at elevated temperatures and therefore inhibits diffusion towards the substrate. Ti acts for silicon as a compound forming barrier according to Nicolet's classification [in Tungsten and Other Refractory Metals for Very Large Scale Integration Applications II, edited by E. K. Broadbent (Materials Research Society, Pittsburgh, 1987); pp. 19–26].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346568
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