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  • 1
    Electronic Resource
    Electronic Resource
    Electrical transport between delta layers in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3602-3605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport between locally grown delta-doped layers spaced 63–146 nm has been investigated. Electrical measurements on devices show symmetrical diode characteristics and for low-threshold voltage values, good agreement with simulations based on the Thomas–Fermi approximation is shown and thermionic emission theory exists.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352300
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum correction to solitary wave propagation in quasi-one-dimensional systems: Nonadiabatic theory of soliton damping (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6463-6468 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The coupled electron–phonon dynamics of a one-dimensional system, which is described by a Su–Schrieffer–Heeger(SSH)-type Hamiltonian, is investigated by means of a time-dependent projection operator technique. The equations of motion for the vibrational and electronic expectation values are derived without using the adiabatic and continuum approximation. When solving these transport equations numerically a quantum correction to the usual soliton solutions which we calculate from the Heisenberg equations for the SSH Hamiltonian is obtained. It turns out that the soliton solutions become unstable when the extension of the soliton is of the order of a lattice constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456312
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  • 3
    Electronic Resource
    Electronic Resource
    Modeling of the static properties for double-δ transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2502-2506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam epitaxy of silicon permits the growth of any layers desired on large areas with a high reproducibility. A vertical arrangement of several thin "delta layers'' in combination with local epitaxy and selective etching leads to a new kind of electron device using the third dimension. With a delta layer thickness of about 2 nm and by varying other device dimensions within a few nanometers, electron devices with threshold voltages on the order of magnitude of a few volts were possible. Selective contacts to the individual delta layers permit vertical transport studies. In the resistance-gate voltage characteristic of a vertical double-delta transistor with an effective gate length of about 90 nm periodic oscillations are clearly observed. It can be shown that in the transistor, three two-dimensional electron systems meet each other perpendicularly. The calculation of the electronic structure of the device is carried out with a simple but reasonably exact method. The calculated eigenvalue spectrum corresponds well with the observed oscillations in the experimental resistance-gate voltage characteristic and permits its interpretation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356248
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical field impact on the gas adsorptivity of thin metal oxide films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2524-2526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin semiconducting NiO film is exposed to NO2 at room temperature. This exposure causes a work function change at the surface of the film due to adsorption of the NO2 molecules. It is found that there is a strong dependence of the adsorptivity, i.e., the amount of work function change per unit time, on the magnitude of an electrical field that is applied perpendicular to the film surface. This induced adsorptivity change is known as the electroadsorptive effect. In order to modulate the adsorptivity significantly, the electrical field strength must exceed 104 V/cm. This requirement can be achieved by using hybrid suspended gate field effect transistors with an air gap height below 1 μm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122503
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  • 5
    Electronic Resource
    Electronic Resource
    Periodic light coupler gratings in amorphous thin film solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7722-7726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient light trapping structures for amorphous hydrogenated silicon (a-Si:H) solar cells have been realized using periodically structured aluminum doped zinc oxide (ZnO:Al) with periods between 390 and 980 nm as a transparent front contact. Atomic force microscopy, optical reflection, and diffraction efficiency measurements were applied to characterize solar cells deposited on such gratings. A simple formula for the threshold wavelength of total internal reflection is derived. Periodic light coupler gratings reduce the reflectance to a value below 10% in the wavelength range of 400–800 nm which is comparable to cells with an optimized statistical texture. Diffraction efficiency measurements and theoretical considerations indicate that a combination of transmission and reflection gratings contribute to the observed reduction of the reflectance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370996
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  • 6
    Electronic Resource
    Electronic Resource
    Excitonic transitions and exciton damping processes in InGaAs/InP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2196-2204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed absorption measurements and the analysis of the absorption spectra of In1−xGaxAs lattice matched to InP are reported. The lattice matching parameter Δa/a covered a range from +4×10−3 to −1×10−3. From the absorption data of material with small matching parameter we obtain the value of the interband matrix element ( P2=20.7 eV), the excitonic Rydberg (Ex =2.5 meV), and damping constant (Γ0=5.1 meV) in the temperature range from 1.5 to 340 K. From the temperature dependent band-gap shrinkage and exciton damping constant Γ, information on the carrier-phonon interaction is obtained. The effect of the biaxial stress in the epitaxial layers caused by the mismatch with the substrate is demonstrated by absorption spectra which directly reveal the valence band splitting due to stress. Absorption measurements on samples with and without substrate indicate that the strained expitaxial layers do not relax completely if the substrate is etched away. The remaining strain field is probably caused by misfit dislocations generated during the epitaxial growth. Taking into account these stress effects, a precise value of the band gap as a function of temperature is derived. At zero temperature, we obtain a value of Eg(0) =821.5±0.2 meV for the band gap of In0.53Ga0.47As. From the absorption spectra we further determine the value of the bimolecular recombination coefficient (B=0.96×10−10 cm3/s at room temperature). The comparison of material grown by molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) shows that there is no difference between significant optical data of LPE and MBE high-quality layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336358
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  • 7
    Electronic Resource
    Electronic Resource
    Strained Si1−xGex multi-quantum well waveguide structures on (110) Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2226-2228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic Si1−xGex/Si multi-quantum well structures for waveguide applications have been grown on (110) Si by molecular beam epitaxy. In a series of samples the Ge fraction x has been varied from x=0.25 to x=0.37 and x=0.50, respectively. We have used photocurrent spectroscopy on mesa diodes to demonstrate that the absorption edge of the strained Si1−xGex quantum wells can be tuned from 1.3 to 1.55 μm by the Ge fraction x. Realization and characterization of single-mode (110) Si1−xGex rib waveguides with end facets of high optical quality, prepared by cleaving, is reported. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113174
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  • 8
    Electronic Resource
    Electronic Resource
    Excitonic luminescence from locally grown SiGe wires and dots (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 994-996 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe quantum wells with finite lateral size have been fabricated using local molecular beam epitaxy through shadowing masks. Scanning electron microscope and transmission electron microscope micrographs show good quality of the mesas and an effective in situ passivation by overgrowth of the buried SiGe quantum wells at the sidewalls of the mesa due to the applied growth technique. Photoluminescence measurements show clear excitonic emission from the SiGe wires and dots with lateral widths down to 2 μm. Intensities per area from the mesas are comparable to intensities from reference areas, suggesting very effective protection of the carriers against possible nonradiative recombination at the sidewalls of the mesa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110929
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of surface phases on silicon capped by amorphous Si layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 611-613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of the different Si:Al and Si:B surface phases capped by amorphous Si layers were grown by molecular beam epitaxy (MBE). The formation of the buried interfaces was studied by low-energy electron diffraction and Auger electron spectroscopy. The conductivity and Hall effect measurements of the grown samples revealed that only the buried Si(111)(square root of)3×(square root of)3−B surface phase manifests itself as a highly doped degenerated layer, while all the buried Si:Al surface phases covered by amorphous Si show negligible activation of dopants. The difference in electrical properties of the buried surface phases are discussed in terms of the characteristics of their atomic structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115405
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  • 10
    Electronic Resource
    Electronic Resource
    Local silicon molecular beam epitaxy with microshadow masks (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2221-2223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method for the in situ patterning of silicon layers grown by molecular beam epitaxy is investigated. Using microshadow masks deposited directly onto silicon substrate epitaxial mesa patterns can be fabricated. The local growth and the resulting geometrical shape of the mesa structures is studied as a function of the substrate temperature during the MBE process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109422
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