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  • 1990-1994  (222)
  • 1975-1979  (60)
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  • 1
    Publication Date: 1992-04-15
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1431-1433 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24±0.03 eV and the capture barrier energy was 0.06±0.02 eV. The trap concentration was less than 3×1014 cm−3 and was found to be independent of Si doping for concentrations up to 4×1018 cm−3 and to oxygen contamination in the range (0.5–1.5)×1018 cm−3.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 865-870 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of an Fe73.5Cu1Nb3Si13.5B9 alloy with nanoscale crystalline structure have been investigated as a function of the melt temperature. In the temperature range of 1240 to 1380 °C investigated in the present study, the permeability increases with the melt temperature. This result may be explained in terms of the reduction in the magnetic anisotropy as a function of the melt temperature. This is supported by the results for the remanence ratio, which also increases with melt temperature in a similar manner to the permeability. In the latter part of the work described in this paper, the relationships between the permeability and the coercivity, and the permeability and the remanence ratio have been investigated for the nanocrystalline alloy. It was found that the permeability is correlated more closely to the remanence ratio than the coercivity.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6591-6593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Al on the soft magnetic properties of nanocrystalline Fe73.5−xAlxCu1Nb3Si13.5B9 alloy ribbons are investigated in the composition range of 0≤x≤1.0. The relative initial permeability at 1 kHz is found to increase by the addition of Al, and reaches the peak value at x=0.1. The coercivity decreases, rather significantly, with the Al content in the whole composition range investigated in the present work, the values of the coercivity being 12.5 mOe at x=0 and 9.3 mOe at x=1.0. The magnetic induction at an applied field of 10 Oe, however, decreases moderately by the introduction of Al, possibly due to the dilution effect. The improvement in the soft magnetic properties is considered to result from the reduction in the grain size of the α Fe-Si solid solution phase of the Al-added alloy ribbons, which has been observed by transmission electron microscopy. Another factor may be due to the decrease in the intrinsic magnetocrystalline anisotropy K1 as Al is added to the alloy.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3626-3633 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of heat treatment on conventional magnetic properties and Barkhausen noise were studied in ferromagnetic amorphous Fe40Ni38Mo4B18 during a half magnetization cycle for both amorphous and crystallized states. The coercivity, Hc, was low in the amorphous specimens and maximum as the crystallization starts, and decreased with further annealing. The differential permeability near to the Hc, μc, was high in the amorphous specimens and minimum at the onset of crystallization, then increased with annealing. The single peak behavior of the Barkhausen noise (BN) envelope was a common feature in both amorphous and crystallized specimens, and the variation of peak height with heat treatment was similar to that of μc. The magnetic anisotropy energy constant, Ku, was lowest when the crystallite started to nucleate in the amorphous specimen, and increased as the crystallite size grows. The difference between ribbon and transverse directions of BN characteristics such as BN energy, peak height of BN envelope, Hp, and corresponding field strength to Hp, respectively, was the lowest at the onset of crystallization, and increased with Ku. A model was proposed to predict the linear relationship between the magnetic anisotropy energy constant detected by torque measurement and the one evaluated by BN measurement.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6406-6412 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new boundary condition is employed in the kinematical model analysis of Bragg-peak profiles of layered single crystals, which is the dynamical reflection amplitude of the substrate instead of the previously used dynamical intensity. It is shown that this boundary condition properly accounts for the angular shift effect in the Bragg-peak profile of very thin epitaxial layers and superlattices. A kinematical model simulates properly the interference profiles in the C-layer Bragg peak of C/A/C/sub-type samples, but not in the B-layer Bragg peak of the B/A/B-type samples. The simulated and experimental rocking curves for the thin single-layer AlGaAs/GaAs and GaInAs/InP samples and for an AlGaAs/GaAs superlattice sample are discussed. Rocking curves are simulated by using the dynamical diffraction theory and the kinematical model with the old or new boundary condition. A matrix method for the dynamical theory superlattice simulation is also presented. The superlattice simulation using this matrix method is found to be substantially faster than the conventional recursive formula approach.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5921-5923 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalloid effect on magnetic properties and microstructures of iron-based alloys with ultrafine grain structures was investigated. For Fe73.5Cu1Nb3(SixB1−x)22.5 (0.5≤x≤0.8) alloys with 10–15-nm grain diameters, the permeability increased with Si content. The alloys with x=0.5 and 0.6 subjected to the optimum heat treatment had two different ferromagnetic phases which were composed of an α-Fe(Si) solid solution with high Curie temperature and an interfacial phase with low Curie temperature. However, in high Si alloys with x=0.7 and 0.8, only a phase with high Curie temperature appeared. This result suggests that in the high Si composition range, a complete transformation from the amorphous phase to the α-Fe(Si) single phase was achieved. The disappearance of the interfacial phase which would certainly disturb the exchange coupling between the α-Fe(Si) phase grains would be considered to be one of the factors for the increased permeability.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5393-5396 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The semiquantitative analysis of optical absorption for interstitial oxygen in silicon was carried out using the molecular orbital theory and compared with results from Fourier transform-infrared equipment having a high resolution of 0.05 cm−1. Six finely split peaks were observed with the wave numbers of 1120.2, 1123.6, 1128.3, 1132.8, 1133.5, and 1136.4 cm−1 at 30 K, among which 1120.2, 1132.8, and 1133.5 cm−1 were newly observed. It is concluded that there seems to be a reliable correlation between the observed band splitting and the likely energy transitions from an S6 symmetry model. Fine splitting of the absorption peaks at low temperature indicates the close relationship between the local Si—O—Si bond and six nearest neighbor silicon atoms forming S6 symmetry. Absorption peaks also were narrower and higher as the measurement temperature was lowered. Hence, it can be said that low-temperature measurement improves the oxygen detectability by a factor of 10 compared with measurement at room temperature.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5427-5432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructures of silicon films deposited on SiO2 substrates by low-pressure chemical vapor deposition using Si2H6 gas were investigated and compared to those using conventional SiH4 gas by transmission electron microscopy and x-ray diffraction. The deposition rate of the Si2H6 process was about ten times higher than that of SiH4 process at low temperatures (〈550 °C). The transition deposition temperature from amorphous to polycrystalline film was found to be around 580 °C, which was similar to that of the SiH4 process. The film deposited at 600 °C was partially crystalline and had equi-axed grains with the largest average grain size of 0.3 μm while the films using SiH4 has needle-like columnar grains with smaller sizes (200 A(ring)). The x-ray diffraction analysis showed that the structural disorder to amorphously deposited Si films increases as deposition temperature decreases. The grain size in the film after crystallization at 600 °C strongly depended on the deposition temperature and the deposition rate, producing a larger grain size at a lower deposition temperature and/or at a higher deposition rate (Si2H6 deposition compared to SiH4 deposition). The apparent increase in grain size can be explained as a result of the lowered number of crystal nuclei due to a decrease in the number of pre-existing microcrystallites serving as heterogeneous nucleation seeds. When the deposition rate was lower than the critical value (approximately 2–4 nm/min), the grain size in the crystallized film decreased for both SiH4 and Si2H6 films. The maximum grain sizes were 4.5 and 0.3 μm at the deposition temperatures of 485 and 550 °C for the films using Si2H6 and SiH4 gases, respectively.
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