Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 7394-7399
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Behavior of Ni impurities at the Si-SiO2 interface of metal-oxide-semiconductor (MOS) was studied with electrical measurements and transmission electron microscopy. Ni impurities were introduced in silicon wafers by ion implantation to the doses of 1.0×1015 and 1.0×1014 cm−2, then the MOS capacitors were fabricated on these wafers. The Ni impurities either nucleated (1.0×1015 cm−2), or scattered uniformly (1.0×1014 cm−2) at the Si-SiO2 interface. The nucleated Ni precipitate is in a metallic B-NiSi2 phase, and penetrates the silicon oxide. The precipitate is thought to make a weak spot in the silicon oxide, where the electric field is strengthened. Uniformly scattered Ni impurities near the Si-SiO2 interface increase the surface state density because they combine with the small steps caused by ion implantation damage. The increase in the leakage current with the Si-SiO2 interface roughness can be semiquantitatively explained by averaging Fowler–Nordheim currents through the Si-SiO2 interface roughness.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356654
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