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  • 1990-1994  (25)
  • 1980-1984  (11)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4797-4807 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After ex situ etching with various solutions of hydrofluoric acid (HF) and ammonium fluoride (NH4F) Si(111) samples are transferred into ultrahigh vacuum with an ultrafast load-lock and characterized by scanning tunneling microscopy (STM): Concentrated HF selectively removes any surface oxide and, thus chemically prepares the initially burried, isotropically rough Si/SiO2 interface while highly buffered HF (i.e., NH4F) attacks bulk silicon anisotropically. After a rapid homogenization of the chemical surface termination (HF: various hydrides, fluorine, ...) towards a perfect, unreconstructed monohydride phase, Si(111)-(1×1):H, NH4F etching leads to a time-dependent transformation of isotropic roughness into a pattern of triangular etch defects with monohydride steps perpendicular to 〈2¯11(approximately-greater-than) due to a preferential removal of lower-coordinated atomic defect sites. A predominant atomic step structure due to sample miscut (vicinal surfaces with azimuth ≠〈2¯11(approximately-greater-than)) can oppose the anisotropic NH4F etching: At low step density (small polar angle of miscut) a meandering of atomic steps with straight monohydride portions is observed while at high step density strong step-step interaction counterbalances anisotropic removal and forces an etching by a homogeneous flow of (nonmonohydride) steps along the macroscopic misorientation. Local findings obtained with STM are compared to macroscopically averaged results from a simultaneous quantitative analysis of low-energy electron diffraction profiles.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 48-55 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus has been constructed to analyze the particle flux of positive ions on surfaces from dry etching reactors. The particle flux can emerge from a great variety of reactive ion etching systems or from reactive ion beam etching sources. The particle beam passes through a small orifice with a diameter of 100 μm. A differentially pumped quadrupole mass spectrometer with a specially designed ion transfer optics performs the energy analysis of positive ions. The energy range can be varied between 0 and 500 eV with a resolution of 1%. The angular distribution measurements of the particle flux are carried out varying the inclination of the mass analyzer by ±20° with the vertex lying centrally in the sampling orifice. The angular resolution is about 1°. Rotation of the source on top of the apparatus and translation over ±10 cm in xy direction and 15 cm in z direction perpendicular to it is provided in order to assure fully local resolution. The electrical properties of the orifice-ion optics system is discussed with respect to their influence on ion trajectories. The purpose of the apparatus is to provide data on particle fluxes relevant for microelectronic processing.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After wet chemical oxide removal and fast transfer into ultrahigh vacuum the Si(111)/SiO2 interface structure of wafers from semiconductor-industrial processes (polishing, oxidation, annealing) is investigated with scanning tunneling microscopy (STM): Regular terrace arrays with atomic step height are visible with STM after technological ex situ preparation. The local step structure varies, kinks at step edges occur, and irregular islands are formed with increasing oxide thickness and oxidation rate. The local STM information is compared to macroscopically averaged results provided by electron diffraction (spot-profile analysis of low-energy electron diffraction).
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 113-115 (Jan. 1993), p. 355-360 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 157-162 (May 1994), p. 1803-1808 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 157-162 (May 1994), p. 1783-1790 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Meteorology and atmospheric physics 34 (1984), S. 97-119 
    ISSN: 1436-5065
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography , Physics
    Description / Table of Contents: Zusammenfassung Eine Methode wird vorgestellt, die die Berechnung der Terme der Energiebflanz für die gesamte Fläche eines Alpentals gestattet. Die Methode basiert auf Messungen an drei Stationen, einem digitalen Geländemodell, einer Vegetationskarte und Messungen der Oberflächentemperatur. Die Ergebnisse sind als Schattierungskarten dargestellt. Die Verteilung der Strahlungsbilanz wird im wesentlichen bestimmt durch die Exposition, die des latenten Wärmestroms durch die Vegetation. Als erste Anwendung wird die Erwärmungsrate der Talatmosphäre durch den Strom fühlbarer Wärme an der Oberfläche bestimmt und mit der Erwärmungsrate verglichen, die aus Temperaturmessungen abgeschätzt wird.
    Notes: Summary A method is presented which allows the computation of the terms of the energy balance for the whole area of an Alpine valley. The method is based on measurements at three stations, a digital topographic model, a vegetation map and surface temperature measurements. The results are given in shadow maps. The distribution of the radiation balance is mainly determined by the topographic exposure, while the latent heat flux is determined mainly by vegetation. As a first application the heating rate of the valley atmosphere is calculated from the modelled sensible heat flux at the valley surface and compared to the heating rate estimated from temperature measurements.
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  • 8
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 57 (1993), S. 491-497 
    ISSN: 1432-0630
    Keywords: 68.55.Ce ; 61.16.Di
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Scanning tunneling microscopy is used to study the epitaxial growth of silicon on Si(111)-(7×7) by Chemical Vapour Deposition (CVD) of disilane (Si2H6) at elevated substrate temperatures directly during the growth process. Different kinetic processes, as island nucleation, growth and coarsening and step flow have directly been imaged as a function of temperature and Si2H6 flow. On a substrate with a low defect concentration several growth modes depending on the flux and the total coverage are distinguished: the formation of multi-level islands as a transient mode leaving the substrate partially uncovered up to 20 bilayers, a transition to layer-by-layer growth when the multi-level islands initially formed coalesce and the formation of three-dimensional islands with tetrahedral shape at higher growth rates which are only metastable due to the presence of hydrogen at the surface. The equilibrium shape of two-dimensional islands is a hexagon whereas the kinetically influenced shape during growth is triangular.
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  • 10
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Zusammenfassung Es wird ein Schnell-Test-System zur massenspektrometrischen Bestimmung der Photostabilität organischer Verbindungen beschrieben. Die erzielten Ergebnisse deuten darauf hin, daß die vorgeschlagene Methode zur Klassifizierung leicht flüchtiger Umweltchemikalien bezüglich ihrer Reaktivität gegenüber UV-Licht der Troposphäre besonders gut geeignet ist.
    Notes: Summary A rapid test system for the mass-spectrometric determination of the photostability of organic compounds is described. The results obtained show that it is suitable for the classification of the UV reactivity of organic pollutants with low-partial pressure in the troposphere.
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