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  • 52.90.+z  (4)
  • 1990-1994  (4)
  • 1980-1984
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  • 1
    Electronic Resource
    Electronic Resource
    Thin films of magnesium oxide prepared by plasma-enhanced chemical vapour deposition (1992)
    Springer
    Applied physics 54 (1992), S. 451-454 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Gh ; 52.90.+z ; 68.55.-a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of magnesium oxide have been deposited on glass, quartz, stainless steel, and nickel by plasma enhanced chemical vapour deposition using 2,2,6,6-tetramethyl-heptanedionato-3,5-magnesium(II) (Mg(thd)2) as precursor. The films show (100)-orientation when deposited at temperatures ≧673 K. The influence of experimental parameters on deposition rate and film properties has been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324170
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  • 2
    Electronic Resource
    Electronic Resource
    Thin zirconium nitride films prepared by plasma-enhanced CVD (1992)
    Springer
    Applied physics 54 (1992), S. 389-392 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.G ; 52.90.+z ; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of zirconium nitride have been deposited at temperatures as low as 573 K by PECVD using tetrakis(diethylamido)zirconium, Zr[N(C2H5)2]4 as precursor. The influence of the various experimental parameters on film properties and deposition rates has been studied. Under most experimental conditions hard coatings of good adherence and low carbon contamination resulted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324208
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  • 3
    Electronic Resource
    Electronic Resource
    Aluminium oxide thin films prepared by plasma-enhanced chemical vapour deposition (1992)
    Springer
    Applied physics 55 (1992), S. 176-179 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Gh ; 52.90.+z ; 68.55.−a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of aluminium oxide have been deposited on glass, quartz, Si(100), steel, nickel, and aluminium by plasma-enhanced chemical vapour deposition (PECVD) using aluminium acetylacetonate (Al(acac)3) as precursor. The deposits are hard (up to 2370 HK) and show good adherence to the substrates. The influence of various experimental parameters on deposition rate, film composition and hardness has been studied. The bias turned out to be the most effective parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00334220
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  • 4
    Electronic Resource
    Electronic Resource
    Use of langmuir probes for monitoring of precursor concentrations during plasma activated chemical vapor deposition of hard coatings (1993)
    Springer
    Applied physics 56 (1993), S. 443-444 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Gh ; 52.70.−m ; 52.90.+z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Langmuir-probe characteristics were measured during the deposition of hard zirconium nitride films in H2 plasmas with tetrakis(diethylamido)-zirconium-Zr[N(C2H5)2]4- as a precursor. A combination of fast repeatable probe sweeps and hysteresis measurements indicated undisturbed characteristics for approximately 1 h. Since the electron concentration is highly dependent on the partial pressure of the precursor it is possible to use probes as sensors to monitor precursor concentration in a discharge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332578
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