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  • 1990-1994  (62)
  • 1985-1989  (43)
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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 2446-2450 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 4064-4068 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4295-4299 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the study of the resistivity and Hall coefficient of ErSi2 thin films epitaxially grown on a Si substrate as a function of temperature and film thickness. Then, we report the first study of the complex index at energies below the silicon band gap (0.5–1 eV). From these data we calculate the absorption length in ErSi2, which is a critical parameter for the design of an efficient silicide silicon photodetector.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1463-1468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative approach to the polycrystalline semiconductor model using an original e-beam irradiation method is proposed. The e-beam was scanned along lines parallel and perpendicular to the drain-source direction in a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. Consequently, the electrostatic surface potential ψs was periodically modulated and appeared similar to that of a polycrystalline semiconductor. The threshold voltage shift, effective and field-effect mobilities were measured as a function of both the irradiation period and dose. Conductivity and Hall effect measurements were performed between 4 and 400 K and a two-mobility conduction model is proposed to interpret the dependence of the carrier concentration and Hall mobility on temperature. Potential modulation scattering and screening mechanisms were studied by varying the gate voltage. The results are compared with those obtained in polysilicon thin layers and polysilicon MOSFETs.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5462-5470 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reactions between HC3N+ and HC3N, and between HC5N+ and HC3N have been examined at pressures from 1×10−7 to 1×10−3 Torr by ion cyclotron resonance mass spectrometry. The reaction between HC3N+ and HC3N has both a bimolecular reaction path and a termolecular reaction path. The overall bimolecular reaction rate coefficient was found to be 1.3×10−9 cm3 s−1. The primary product, HC5N+, represents 90% of the product ions, while the minor products HC6N+2 and H2C6N+2 each represent 5%. The termolecular association rate coefficient was 3.7×10−24 cm6 s−1 with He as the third body. From double resonance experiments the mean lifetime of the collision complex was determined to be 180 μs. HC5N+ was found to react with HC3N and form the adduct ion H2C8N+2 through both bimolecular and termolecular channels. The bimolecular rate coefficient was 5.0×10−10 cm3 s−1 and the termolecular rate coefficient was observed to be 1.2×10−22 cm6 s−1 with HC3N as the third body. With He as the stabilizing molecule, the termolecular rate coefficient was 6.0×10−24 cm6 s−1. The mean unimolecular lifetime of the collision complex was estimated to be ≥15 μs and the mean radiative lifetime for the radiative association channel was found to be ≥89 μs. HC5N+ was found to be formed with excess internal energy and did not react by bimolecular association until relaxed by several nonreactive collisions with HC3N.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7163-7172 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The association reactions, C4H+2+C2H2 and C4H+3+C2H2 have been examined at pressures between 8×10−8 and 1×10−4 Torr at 298 K in an ion cyclotron resonance mass spectrometer. Association occurred via two different mechanisms. At pressures below ∼2×10−6 Torr, the association was bimolecular having rate coefficients k2=2.7×10−10 cm3 s−1 and 2.0×10−10 cm3 s−1 for C4H+2 and C4H+3, respectively. At pressures above ∼2×10−6 Torr, termolecular association was observed with rate coefficients, k3=5.7×10−23 cm6 s−1 and 1.3×10−23 cm6 s−1 for C4H+2 and C4H+3, respectively, when M=C2H2. The termolecular rate constants with N2, Ar, Ne, and He as the third body, M, are also reported. We propose that the low pressure bimolecular association process was the result of radiative stabilization of the complex and the termolecular association process was the result of collisional stabilization. Elementary rate coefficients were obtained and the lifetime of the collision complex was ≥57 μs for (C6H+4)* and ≥18 μs for (C6H+5)*. At pressures below 1×10−6 Torr, ∼11% of the (C6H+4)* were stabilized by photon emission and the remaining ∼89% reverted back to reactants, while ∼24% of the (C6H+5)* were stabilized by photon emission and the remaining ∼76% reverted back to reactants. The ionic products of the C2H+2+C2H2 reaction, C4H+2 and C4H+3, were found to be formed with enough internal energy that they did not react by the radiative association channel until relaxed by several nonreactive collisions with the bath gas.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 4189-4191 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In the ion–molecule reaction between HC3N+ and HC3N, the lifetime of the collision complex (H2C6N+2)* was long enough that ion cyclotron double resonance techniques could be used to probe the distribution of the lifetimes of the collision complex. The mean lifetime of the collision complex at room temperature was measured as 180 μs with a distribution ranging from 60 to 260 μs as measured at the half-heights in the distribution. Lifetimes of this magnitude with respect to unimolecular dissociation allow for some stabilization of the collision complex by the slower process of infrared photon emission.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 898-900 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time the epitaxy of CoSi2 on 〈111〉 Si submicron lines together with the overgrowth of Si on top of the resulting grating. Results indicate that strain fields and huge mass transport control the morphology of the resulting structures. Silicon is shown to grow two dimensionally when the grating period is in the submicrometer range. Preliminary results on the electrical performance of those Si/CoSi2 /Si permeable base transistors are presented.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1155-1157 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study presents optical transmission measurements performed on free-standing homogeneous porous silicon (PS) films of different porosities and substrate doping levels. The absorption coefficient curves deduced from these measurements, taking into account the total quantity of matter in the PS film, exhibit significant blue shift (up to 500 meV). These shifts, well correlated with the crystallite size variations with porosity and substrate doping observed by electron microscopy and gas adsorption experiments, are attributed to quantum size effects in the silicon microcrystallites.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2367-2369 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon superlattices have been fabricated electrochemically. The current was monitored periodically during the electrolysis and samples were made with several periods. They have been investigated using reflectance measurements in the infrared and visible range. We demonstrate that porous silicon superlattices act like a multilayer dielectric device.
    Type of Medium: Electronic Resource
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