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  • Articles  (184)
  • 1990-1994  (98)
  • 1985-1989  (86)
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  • 1
    facet.materialart.
    Unknown
    Signaling for growth orientation and cell differentiation by surface topography in uromyces (1987)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1987-03-27
    Description: The dimensions of the topographical signals for growth orientation and infection structure formation, a cell differentiation event that includes nuclear division, were determined for the stomatal penetrating rust fungus Uromyces appendiculatus. The differentiation signal was found to be a simple ridge on the substrate surface that had a markedly optimum height of 0.5 micrometer. Such ridges were microfabricated on silicon wafers by using electron-beam lithography. A similar ridge, in the form of a stomatal lip, was found associated with the stomatal guard cells of the bean (Phaseolus vulgaris) leaf. Ridge elevations greater than 1.0 micrometer or less than 0.25 micrometer did not serve as effective signals. Germ tubes of the fungus were highly oriented by ridge spacings of 0.5 to 6.7 micrometers. The data indicate that the fungus is able to distinguish uniquely minute differences in leaf surface topography in order to infect the host plant.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Hoch, H C -- Staples, R C -- Whitehead, B -- Comeau, J -- Wolf, E D -- New York, N.Y. -- Science. 1987 Mar 27;235(4796):1659-62.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17795599" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    The 100-kDa chain of nicein/kalinin is a laminin B2 chain variant (1994)
    Wiley
    Details
    Publication Date: 1994-01-01
    Print ISSN: 0014-2956
    Electronic ISSN: 1432-1033
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Published by Wiley on behalf of Federation of European Biochemical Societies.
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  • 3
    Electronic Resource
    Electronic Resource
    Role of coherency in the elastic behavior of composition-modulated superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4573-4580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the role of coherency in the elastic behavior of composition-modulated superlattices of fcc metals by atomistic computer simulations using Lennard–Jones potentials. Structures, energies, and elastic properties of incoherent superlattices are computed as a function of the compositional modulation wavelength along [001] and compared with those of coherent superlattices. Both superlattice types were taken to have a 10% lattice parameter mismatch between the two materials. The incoherent superlattices, as compared to coherent superlattices, were found to be more structurally disordered and exhibited greater elastic anomalies, which cannot be accounted for by the overall dimensional changes of the superlattices alone. High- and low-frequency elastic constants are briefly compared. It is proposed that increasing the structural disorder in the superlattices by increasing the lattice-parameter mismatch or by introducing a relative rotation between the two materials will enhance all of the elastic anomalies even further.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346164
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  • 4
    Electronic Resource
    Electronic Resource
    High-speed 1.3-μm InGaAsP buried crescent lasers with Fe-doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1061-1063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating InP layers grown by low-pressure organometallic vapor phase epitaxy with tertiarybutylphosphine have been used as a current block layer for high-speed 1.3-μm InGaAsP buried crescent lasers. The performance characteristics of such lasers are comparable to those of lasers with a PH3-grown Fe-doped semi-insulating InP current blocking layer over a measurement temperature range of 25 to 85 °C. A 3-dB modulation bandwidth of 17.5 GHz has been obtained at room temperature and a cw bias current of 100 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350400
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  • 5
    Electronic Resource
    Electronic Resource
    High-rate (∼50-A(ring)/s) deposition of ZnO films for amorphous silicon alloy solar-cell back-reflector application (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1692-1694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Back reflectors have been fabricated by the deposition of ZnO films on textured Ag films. High deposition rates of ∼50 A(ring)/s have been achieved by the dc magnetron sputtering technique. The ZnO target used has been prepared in our laboratory. Amorphous silicon alloy solar cells have been deposited on the ZnO/textured Ag back reflector. Control samples have been prepared by the deposition of identical cells on the same back reflector, but in which the ZnO films have been prepared by a low-rate ∼5-A(ring)/s rf sputtering process. The short-circuit current density, which has been used as the primary test parameter for evaluating the back reflectors, is slightly superior in the case of the high-rate ZnO back reflector. The high-rate deposition process is, therefore, attractive for large-volume production application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349538
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and energy of general grain boundaries in bcc metals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 185-196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The zero-temperature energies and equilibrium volume expansions of point-defect-free asymmetrical grain boundaries (GBs) in bcc metals are determined using both a many-body potential fitted for Mo and a Johnson-type pair potential spline-fitted for α-Fe. The asymmetrical combinations of lattice planes considered involve one of the five densest planes of the bcc lattice on one side of the interface and a commensurate higher-index plane on the other. As in similar recent work on fcc metals, the two asymmetrical pure tilt boundaries obtained for any given combination of lattice planes give rise to pronounced energy cusps. When a twist component is added to the asymmetrical GB, thus forming a general (or "asymmetrical twist'') boundary, the energy and planar unit-cell area increase due to the introduction of screw dislocations. A comparison with earlier work on symmetrical GBs in bcc metals suggests that, except for the densest lattice planes, asymmetrical boundaries may actually have lower energies than symmetrical ones. The underlying causes are elucidated via a comparison with recent simulations of free surfaces and with the random grain-boundary limit (in which the interactions of the atoms across the interface are assumed to be entirely random).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347741
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  • 7
    Electronic Resource
    Electronic Resource
    A broken-bond model for grain boundaries in face-centered cubic metals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3221-3236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interrelation between the number of nearest-neighbor atomic bonds broken upon formation of a grain boundary in an fcc metal and the related zero-temperature boundary energy is investigated by atomistic simulation. Using both a Lennard–Jones and an embedded-atom-method potential, the structures and energies of symmetrical and asymmetrical tilt and twist boundaries are determined. As in free surfaces, a practically linear relationship between the nearest-neighbor miscoordination per unit area of the grain boundary and the related interface energy is obtained. The so-called random-boundary model, in which the interactions across the interface are assumed to be entirely randomized, is shown to provide a basis for understanding the role of broken bonds in both high-angle grain boundaries and free surfaces, thus naturally permitting the analysis of ideal cleavage-fracture energies. A detailed study of low-angle boundaries shows that only the dislocation cores—but not their strain fields—give rise to broken bonds. The complementarity between the dislocation model of Read and Shockley for low-angle boundaries and a broken-bond model for high-angle boundaries is thus elucidated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346373
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  • 8
    Electronic Resource
    Electronic Resource
    Surface-stress-induced structure and elastic behavior of thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2081-2083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computer simulations of unsupported (111), (001), and (011) thin films of gold, using an embedded-atom-method potential, demonstrate a direct correlation between the bulk-surface stress and the film dimensions. The considerably more complex elastic behavior, by contrast, appears to be dominated by the atomic structure of the film surfaces, and not by the stress-induced anisotropic lattice parameter changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105017
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  • 9
    Electronic Resource
    Electronic Resource
    1.3 μm InGaAsP buried crescent lasers with cobalt-doped semi-insulating current blocking layers grown by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1257-1259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt-doped semi-insulating InP layers grown by low-pressure metalorganic chemical vapor deposition (LPMOCVD) have been used for the first time as a current blocking layer for 1.3 μm InGaAsP buried crescent lasers. Lasers with this cobalt-doped InP blocking layer have cw threshold currents as low as 8 mA at room temperature. This is the lowest cw threshold current yet reported for an InGaAsP laser with a semi-insulating current blocking layer. In addition, the lasers exhibit total differential quantum efficiency of 60%, high-temperature operation up to 100 °C, high output power of 30 mW/facet, and a 3-dB modulation bandwidth of 11.6 GHz. These results indicate that the cobalt-doped semi-insulating InP layer grown by LPMOCVD provides effective current blocking for high-performance lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99994
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  • 10
    Electronic Resource
    Electronic Resource
    Reduction of specific contact resistance on GaInAsP by rapid thermal process anneal (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2325-2327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An order of magnitude improvement in the specific contact resistance of gold-based ohmic contacts to p-type GaInAsP (Eg=1.13 eV) is reported. A novel technique using a silicon susceptor has been employed in a rapid thermal processor. A direct comparison between gold-based contacts annealed in a conventional furnace and the rapid thermal processor indicated a specific contact resistance of 4.2×10−5 and 4.1×10−6 Ω cm2, respectively. Auger electron spectroscopy, in depth profile mode, revealed two different metallurgical profiles for the conventional furnace and the rapid thermal processor. The rapid thermal processor was successfully implemented in a p-i-n optical detector process resulting in a reduction in the device series resistance and improved performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102051
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