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  • 1
    Electronic Resource
    Electronic Resource
    Partial match retrieval using recursive linear hashing (1985)
    Springer
    BIT 25 (1985), S. 477-484 
    Details
    ISSN: 1572-9125
    Keywords: partial match retrieval ; linear hashing ; dynamic files ; 3.74 ; 4.33 ; 4.34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract Recursive linear hashing is a hashing technique proposed for files which can grow and shrink dynamically. The scheme is an extension of linear hashing, a method originally proposed by Litwin, but unlike Litwin's scheme, it does not require conventional overflow pages. In this paper, we investigate the application of recursive linear hashing to partial match retrieval problems. Consistent with the results for primary key retrieval, recursive linear hashing performs better than the conventional scheme on these problems, especially at high load factors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01935368
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    Paper (German National Licenses)
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  • 2
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    Unknown
    SPROC: A multiple-processor DSP IC (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: A large, single-chip, multiple-processor, digital signal processing (DSP) integrated circuit (IC) fabricated in HP-Cmos34 is presented. The innovative architecture is best suited for analog and real-time systems characterized by both parallel signal data flows and concurrent logic processing. The IC is supported by a powerful development system that transforms graphical signal flow graphs into production-ready systems in minutes. Automatic compiler partitioning of tasks among four on-chip processors gives the IC the signal processing power of several conventional DSP chips.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Idaho Univ., The 1991 3rd NASA Symposium on VLSI Design; 10 p
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    Deep-level dominated electrical characteristics of Au contacts on beta-SiC (1990)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 137; 1598-160
    Format: text
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    NASA TECHNICAL REPORTS
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