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  • Springer  (128)
  • American Institute of Physics (AIP)  (16)
  • 1990-1994  (71)
  • 1985-1989  (65)
  • 1960-1964  (6)
  • 1950-1954  (2)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of highly leachable gel-derived alumina ceramic cores (1993)
    Springer
    Journal of materials science 12 (1993), S. 1570-1573 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00627016
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical reactivity of YBaCuO and Bi(Pb)SrCaCuO superconductors in water (1993)
    Springer
    Journal of materials science 12 (1993), S. 1574-1576 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00627017
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  • 3
    Electronic Resource
    Electronic Resource
    Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7471-7477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority-carrier electron-diffusion coefficients and lifetimes have been measured in heavily doped p-type GaAs using the zero-field time-of-flight (ZFTOF) technique. The materials studied included C-doped GaAs grown by molecular-beam epitaxy (MBE) using graphite as the dopant source, C-doped GaAs grown by metalorganic chemical-vapor deposition (MOCVD) using CCl4 as the dopant source, and Be-doped GaAs grown by MBE. Room-temperature photoluminescence intensity measurements were made on the structures and the results are compared with ZFTOF measurements of lifetime. The graphite-doped material (p∼1019 cm−3) exhibited diffusion lengths of less than 1000 A(ring). MOCVD-grown C-doped GaAs, which was optimized by adjusting the growth conditions to maximize the room-temperature photoluminescence intensity, had diffusion lengths comparable to those measured in Be-doped GaAs for hole concentrations of 1×1019 and 5×1019 cm−3. Comparison of photoluminescence intensities also suggests that addition of In to very heavily doped MOCVD-grown GaAs (p(approximately-greater-than)1020 cm−3) to eliminate the lattice mismatch with respect to the substrate does not result in an improvement in lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353991
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetohydrodynamic processes in the solar corona: Flares, coronal mass ejections, and magnetic helicityf| (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 1684-1690 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetized, million-degree solar corona evolves in cycles of about 11 years, in dynamical response to newly generated magnetic fluxes emerging from below to eventually reverse the global magnetic polarity. Over the larger scales, the corona does not erupt violently all the time. Violent events like the flares and episodic ejections of material into interplanetary space occur frequently, several times a day, but they often originate in long-lived magnetic structures that form continually throughout the solar cycle. In this paper, the creation, stability, and eventual eruption of these structures are discussed from basic principles, drawing on recent advances in observation and theory. A global view is offered in which different pieces of observation relate physically, with distinct roles for the conservation of magnetic helicity and the release of magnetic energy in dissipated and ordered forms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870671
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  • 5
    Electronic Resource
    Electronic Resource
    A simple two-stage cascading spark gap for ultraviolet preionized transversely excited atmospheric CO2 lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2584-2587 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple trigatron spark-gap chamber is modified to accommodate two cascading high-voltage breakdowns, separated by the time lag of the second spark formation. The time lag is employed as a temporal delay for synchronizing the ultraviolet preionization and the main discharge in the transversely excited atmospheric CO2 laser. Owing to prompt triggering and in situ preionization of the second breakdown, reliable delay up to 500 ns is possible by simply varying the separation of the second spark-gap electrode to that of the first spark gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142234
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  • 6
    Electronic Resource
    Electronic Resource
    The geometry of the space of null geodesics (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 809-811 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The topology and geometry of the space of null geodesics N of a space-time M are used to study the causal structure of the space-time itself. In particular, the question of whether the topology of N is Hausdorff or admits a compatible manifold structure carries information on the global structure of M, and the transversality properties of the intersections of skies of points tell whether the points are conjugate points on a null geodesic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528401
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  • 7
    Electronic Resource
    Electronic Resource
    Resonance enhanced multiphoton ionization spectroscopy of the NF molecule: 1Σ+ and 1Δ 3p Rydberg states (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 6360-6368 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two Rydberg states of the NF molecule, the 2 1Δ and 2 1Σ+ states, have been investigated by multiphoton ionization (MPI) spectroscopy. These states are observed via the two-photon resonance enhancements they provide in the multiphoton ionization spectra of NF a 1Δ and NF b 1Σ+. Both states are assigned on the basis of experimental evidence as Rydberg states with the dominant configuration ...1π45σ22π1 (3pπ)1. Ab initio calculations performed at the multireference determinant configuration interaction (MRDCI) level showed that these states were of mixed Rydberg-valence character with the Rydberg character [... 1π45σ22π1 (3pπ)1] dominating at short bond lengths (〈1.35 A(ring)) and the valence character (... 1π35σ22π3) becoming more important at longer bond lengths ((approximately-greater-than)1.35 A(ring)). These calculations also proved useful in providing a mechanism to account for the rotational predissociation observed in the experimental spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465874
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  • 8
    Electronic Resource
    Electronic Resource
    Optimum capacitor ratio in a transversely excited atmospheric CO2 laser (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 71-75 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performance of a pulsed CO2 laser using the capacitor transfer circuit is generally known to improve with an optimum peaking-to-storage capacitor ratio Cp/Cs which varies from around 0.1 to almost 0.5. There has been no reported attempt to account for precisely the origin of this optimum ratio and the large difference amongst them with different experimental setups. In this paper, the optimum capacitor ratio is shown to depend uniquely on the distributed circuit inductances. This may be understood from a simple consideration of the impedance matching for achieving an optimum power transfer at a quasiconstant E/N ratio into the main discharge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144404
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  • 9
    Electronic Resource
    Electronic Resource
    Space-charge recombination in N-AlGaAs/p+-GaAs heterojunction diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2423-2425 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Space-charge recombination currents were measured in N-AlGaAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy (MBE) under various growth conditions. The diode epilayer structure was designed to simulate the emitter-base junction of a heterojunction bipolar transistor.The diodes were fabricated using a fast turnaround mesa process, and their forward current-voltage characteristics were fit to a simple model to extract the recombination current density. The space-charge recombination decreased steeply with increasing growth temperature Ts between 560 and 610 °C, and it decreased when the As4/Ga ratio was reduced from 3 to 1. It was lower for misoriented substrates (6° off 〈100〉 toward 〈111〉A) than for 〈100〉 oriented substrates, and it decreased significantly as the result of a post-growth anneal in the MBE system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102272
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of high-purity Si-doped molecular beam epitaxial GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4685-4702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity, lightly Si-doped (μ77∼70 000–126 000 cm2/V s and n77∼2–8×1014 cm−3) molecular beam epitaxy (MBE) GaAs layers have been characterized using variable-temperature Hall effect and C-V measurements, photothermal ionization spectroscopy, low-temperature photoluminescence (PL), and deep level transient spectroscopy (DLTS). The spectroscopic measurements of the residual donors and acceptors indicate that the pronounced increase in carrier concentration which is observed with increasing As flux (for a constant Ga flux) results from incorporation of additional residual S donors from the As source material, and not from reductions in the Si acceptor concentration or residual C acceptor concentration. The increase in carrier concentration with As flux is considerably more pronounced when using an alternative source of As, which introduces both S and 3 additional donor species. The C acceptor concentration increases with As flux using either As source, although the increase is much stronger with the alternative source. The dependence of C concentration on the As source implies that the As source itself contributes at least part of the C background. The Si acceptor concentration is negligible for the range of growth conditions that were used. Close compensation between the residual S donors and C acceptors may account for the high resistivity previously observed in undoped samples grown in this system using the purer As source. The PL data exhibit very weak "defect''-related emissions in the 1.504–1.512 and 1.466–1.482 eV ranges; evidence is presented supporting the existence of a correlation between these two sets of peaks, in agreement with the work of Briones and Collins.Temperature and excitation intensity-dependent PL measurements are used to demonstrate conclusively that the peaks in the 1.466–1.482 eV range are donor-to-acceptor and band-to-acceptor in nature, involving normal shallow donors and at least four different acceptor levels whose exact origin is unknown. The "defect'' peak intensity is larger in the less pure material which contains more C, implying that the "defects'' may be C related. Several electron traps including M1, M3, and M4 are observed in the DLTS spectra, and the C-V measurements give a total trap concentration of ∼3×1013 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336243
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