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  • 1990-1994  (28)
  • 1985-1989  (17)
  • 1980-1984  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Textured (100) yttria-stabilized zirconia thin films deposited by plasma-enhanced chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 470-472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of yttria-stabilized zirconia were deposited by plasma-enhanced chemical vapor deposition on quartz Si(100), Si(111), Ni, and the steels V2A and hastelloy at substrate temperatures (Ts): 673–873 K. The metal β-diketonates Y(thd)3 and Zr(thd)4 were used as precursors. The fully stabilized fluorite-type cubic structure was obtained over a wide range of yttria contents from 3.5 to 80 mol % (Ts=773 K). The quality of the films depended on the match of the thermal expansion coefficients of substrate and deposit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105439
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  • 2
    Electronic Resource
    Electronic Resource
    Triplet-singlet interaction in the 1s 2s3S1 hyperfine splitting of he-like Li+ (1983)
    Springer
    The European physical journal 313 (1983), S. 147-150 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The hyperfine structure (hfs) interaction between the metastable 23 S 1 and 21 S 0 states in6, 7Li+ causes very small equal and opposite energy level shifts,δ, in the two levels having the same total angular momentum quantum numberF=I. This amounts to 12ppm with respect to the total hfs splitting of 30 GHz for the7Li+ 23S1 state and has been measured for the first time directly for the case of a core-free electronic system by combined laser-microwave spectroscopy. A new calculation ofδ with accurate integral-transform 21 S 0 and 23S1 wave functions is reported. Configuration interactions and electron exchange and correlation effects, which differ for parallel (3 S 1) and antiparallel (1 S 0) spins, are treated in detail in order to obtain very good agreement between measured and theoretical values for this tiny perturbation. A complete understanding ofδ is indispensable for extracting fundamental constants from two-electron spectroscopic data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01417220
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  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear spectroscopy (1982)
    Springer
    Applied physics 28 (1982), S. 81-91 
    Details
    ISSN: 1432-0649
    Keywords: 42.65 ; 07.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00697833
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition of silver films by plasma-enhanced chemical vapour deposition (1989)
    Springer
    Applied physics 49 (1989), S. 691-696 
    Details
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Plasma-enhanced chemical vapour deposition of silver films has been performed using perfluoro-1-methylpropenylsilver as a precursor. Under most conditions of rf power, substrate temperature and gas composition shiny films with resistivities of ≦2 μω cm and impurities of ≦1 % are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616995
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  • 5
    Electronic Resource
    Electronic Resource
    Thin yttrium and rare earth oxide films produced by plasma enhanced CVD of novel organometallic π-complexes (1990)
    Springer
    Applied physics 51 (1990), S. 520-525 
    Details
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Novel volatile cyclooctatetraenyl-pentamethylcyclopentadienyl sandwich complexes have been used as precursors to deposit thin yttrium and rare earth oxide films by means of PECVD. These compounds form pure oxide films in plasmas of argon/oxygen or argon/water-vapour, in nitrous oxide, and carbon dioxide at substrate temperatures of 350–400° C and power densities of 1.0–1.5 W/cm2. The films were characterized by metal analysis, carbon analysis, XPS, CTEM electron diffraction, SEM micrographs, and FTIR spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324736
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  • 6
    Electronic Resource
    Electronic Resource
    Deposition of copper oxide (Cu2O, CuO) thin films at high temperatures by plasma-enhanced CVD (1990)
    Springer
    Applied physics 51 (1990), S. 486-490 
    Details
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Copper-oxide films are deposited by plasma-enhanced CVD using copper acetylacetonate as a precursor. The influence of various experimental parameters on deposition rate, film composition and resistivity have been studied. The substrate temperature and the bias are the parameters which affect these properties the most. An increase of the substrate temperature changes the phases of the deposit from Cu2O-CuO over Cu2O to Cu. At temperatures ≧500° C the deposition rates are high but the films consist mainly of metallic Cu. A negative bias enhances the deposition rate only slightly but has a strong effect on the film composition and can completely balance the oxygen deficiency. At a bias of −120 V the films consist of pure CuO even at temperatures ≧500° C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324731
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  • 7
    Electronic Resource
    Electronic Resource
    Thin films of magnesium oxide prepared by plasma-enhanced chemical vapour deposition (1992)
    Springer
    Applied physics 54 (1992), S. 451-454 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Gh ; 52.90.+z ; 68.55.-a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of magnesium oxide have been deposited on glass, quartz, stainless steel, and nickel by plasma enhanced chemical vapour deposition using 2,2,6,6-tetramethyl-heptanedionato-3,5-magnesium(II) (Mg(thd)2) as precursor. The films show (100)-orientation when deposited at temperatures ≧673 K. The influence of experimental parameters on deposition rate and film properties has been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324170
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  • 8
    Electronic Resource
    Electronic Resource
    Deposition of thin rhodium films by plasma-enhanced chemical vapor deposition (1989)
    Springer
    Applied physics 48 (1989), S. 373-375 
    Details
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of rhodium have been prepared starting from dicarbonyl-2.4-pentadionato-rhodium(I), Rh(CO)2C5H7O2, by plasma enhanced CVD. The dependence of the deposition rate and film properties on substrate temperature, partial pressure of the organometallic and on hydrogen has been studied. Metal contents of ≈ 100% and thin-film resistivities as low as 5 times the bulk resistivity of rhodium have been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618901
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  • 9
    Electronic Resource
    Electronic Resource
    Thin zirconium nitride films prepared by plasma-enhanced CVD (1992)
    Springer
    Applied physics 54 (1992), S. 389-392 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.G ; 52.90.+z ; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of zirconium nitride have been deposited at temperatures as low as 573 K by PECVD using tetrakis(diethylamido)zirconium, Zr[N(C2H5)2]4 as precursor. The influence of the various experimental parameters on film properties and deposition rates has been studied. Under most experimental conditions hard coatings of good adherence and low carbon contamination resulted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324208
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  • 10
    Electronic Resource
    Electronic Resource
    Laser-induced CVD of rhodium (1991)
    Springer
    Applied physics 53 (1991), S. 430-436 
    Details
    ISSN: 1432-0630
    Keywords: 42.60-v ; 81.15 Gh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Stripes of rhodium metal were deposited by focusing an Ar+ laser (514.5 nm) onto glass and polyimide substrates in a heated vacuum cell that contained Rh(CO)2acac vapor. Stripes were characterized by scanning profilometry, electrical resistivity, SEM and Auger measurements. Most stripes were 100–200 μm wide and 1–3 μm high. Very broad stripes (〉500 μm) were deposited when the Rh(CO)2acac vapor pressure was greater than 1 Torr and when the laser power was more than 200 mW. Stripe resistivities were in general around 30 times that of the bulk material. Auger spectra show the presence of carbon in the stripes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348158
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