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  • 1995-1999  (82)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2358-2360 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible electroluminescence (EL) has been observed from Ag (film or paste)/native SiO2/n-type Si structures. The diodes show good rectification behavior and the EL occurs only under reverse bias conditions when the top Ag electrode is negative. For p-type samples, a forward bias is required. The intensity of the EL is proportional to the diode current and its spectrum peaks at 620–640 nm. A model based on oxygen-related luminescent centers in the native oxide is proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5087-5089 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we demonstrate the effect of magnetic linear dichroism (MLD) in electron energy loss spectroscopy (EELS), as applied to the antiferromagnetic compound α-Fe2O3. The experiments were performed in a high resolution scanning transmission electron microscope (STEM), capable of producing a nanoscale electron probe. The resultant difference spectrum is consistent with the MLD observed in x-ray absorption spectroscopy and the known magnetic structure of Hematite, suggesting that MLD in EELS, coupled with the high spatial resolution attainable in STEM, is a useful technique in the study of magnetic microstructure. © 1997 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5503-5505 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plane wave propagation at the composite–medium interface is analyzed for the piezoceramic polymer composites with laminated periodic structure. It is found that the input acoustic impedance of the composite depends on the elastic properties of the medium at the interface and in general is a complex number and dispersive. It is also found that the reflected wave from the medium–composite interface suffers a more than 180° phase change, which implies that the thickness of the conventional antireflection "quarter wave matching layer'' at the interface should be less than a quarter wave length. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 49-51 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4385-4388 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found significant electroluminescence (EL), clearly visible in room light, to be produced from lightly oxidized Si wafers, which have been mechanically scratched, or indented with a diamond tip. The EL occurs in the visible and infrared ranges. Undamaged oxidized samples, where the oxide is chemically thinned to allow current from a top contact to pass, also show similar EL. However, damaged Si wafers that have only normal thin or no oxide, show negligible EL. A search for quantum-confined particles in indentation pits by scanning tunneling microscopy does not show any present. The results point strongly to the EL mechanism being related to the damage creating areas of optimum oxide thickness. The results are compared with those from spark-processed and laser-grooved silicon. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3328-3330 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated spark-processed silicon so as to produce electroluminescence which is readily visible in semidark conditions. There are three emission peaks at around 1.3, 1.6, and 1.9 eV. The photoluminescence spectrum shows only one peak at around 1.9 eV. The electroluminescence is polarity dependent. Although the average efficiency over areas of several mm2 is low, the emission is concentrated at various spots which are bright and have a much higher efficiency. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2468-2470 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the transport properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted in the center of a GaAs quantum well. We observed that, while maintaining a constant carrier density, the mobility increased as the InAs dot density was reduced. The ratio of the transport to the quantum lifetime was measured to be approximately five with the dominant scattering mechanism attributed to short-range scattering from the inserted InAs dots. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 3823-3834 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We investigate the effectiveness of chirped laser pulses in exciting a multimode system, where a vibrational mode is coupled to a large number of bath modes. We solve the Liouville equation for this model numerically to investigate the roles played by laser frequency, laser intensity, pulse width, frequency sweeping rate, and bath relaxation times in inducing vibrational excitation. We investigate the range of parameters for which chirping excitation is efficient for multimode systems. In addition, we study constant-frequency excitations using the present model, revealing the special effects of phase relaxation time and the phenomenon of molecular bistability. Furthermore, we present results on quantum decoherence and assess the validity of an effective Hamiltonian method. © 1999 American Institute of Physics.
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  • 9
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] An early Russian report9 on the existence of gas inclusions in glass from the Ries crater mentions finding grains containing high-pressure carbon polymorphs, one of which was shown to be diamond/lonsdaleite by X-ray diffraction. Recently, Masaitis4 reported finding a small number of apographitic ...
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 166 (Apr. 1999), p. 19-24 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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