Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2062-2063
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A technology to reduce the dislocation density in GaN thin films by lateral overgrowth from trenches (LOFT) is reported. In LOFT, a GaN thin film was grown on sapphire substrate first, then trenches were formed into the thin film by etching. GaN material was regrown laterally from the trench sidewalls to form a continuous thin film. The average surface density of threading dislocations is reduced from 8×109/cm2 in the first GaN thin film to 6×107/cm2 in the regrown GaN thin film. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124916
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