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  • 1995-1999  (189)
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  • 1
    Electronic Resource
    Electronic Resource
    Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examined low-frequency noise in doped and undoped channel GaN/AlGaN/SiC heterostructure field-effect transistors with different Al content in the barrier. The observed noise spectra follow the 1/fγ law with 0.8≤γ≤1.2 for frequencies f up to 100 kHz. Our results indicate two orders of magnitude reduction in the input-referred noise spectral density in the undoped channel devices with respect to the noise density in the doped channel devices of comparable electric characteristics. Low temperature measurements reveal generation—recombination-type peaks in the spectra of the doped channel devices. Effects of the piezoelectric charges at the GaN/AlGaN interface are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124917
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  • 2
    Electronic Resource
    Electronic Resource
    Simple method for evaluating process-induced charging damage to the gate oxide of metal-oxide-semiconductor devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1770-1772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents a simple approach to characterize process-induced charging damage in the gate oxide of metal-oxide-semiconductor (MOS) devices. The method uses the monitoring of voltage transients during constant-current stress performed on plasma-damaged and reference devices. The difference in transients allows direct extraction of the amount of electron traps created in the oxide by charging currents during processing. The method is verified by experimental simulation and applied to extract the density of electron traps introduced in the oxide by process-induced charging. This technique is a fast and efficient approach to assess device damage and extract physical parameters of generated traps which can be used later for lifetime prediction in reliability simulators. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117480
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  • 3
    Electronic Resource
    Electronic Resource
    Generation of hole traps in thin silicon oxide layers under high-field electron injection (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1826-1828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The letter reports an observation of a new degradation mechanism in thermal silicon dioxide layers on silicon, namely generation of hole traps under high-field stressing of metal-oxide-semiconductor (MOS) structure. Excess hole trapping due to newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide of p-channel MOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps has a weak stress-polarity dependence and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116026
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  • 4
    Electronic Resource
    Electronic Resource
    Experimental and theoretical investigations of the structure and the stability of the BNSi molecule (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 9325-9329 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Theoretical computations were carried out to determine the structure and molecular parameters of the BNSi molecule. The most stable isomer is found to have a BNSi linear geometry. Thermal functions as derived from the theoretical computed molecular parameters were used in the evaluation of the thermodynamic properties of BNSi from high-temperature Knudsen effusion mass spectrometric equilibrium data. From the reactions analyzed by the second-law and third-law methods, the enthalpy of formation, ΔfH0o, and of atomization, ΔaH0o, in kJ mol−1, for BNSi, were obtained as 398±16 and 1078±17, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479844
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  • 5
    Electronic Resource
    Electronic Resource
    A Knudsen effusion mass spectrometric study of the molecule Si3N (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 6016-6019 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Condensed phase mixtures (Ge+Si+Si3N4) and (Si+Si3N4) were evaporated from boron nitride Knudsen cells and the partial pressures of Si3N(g),Si2NSi2(g), and Si(g) measured with a mass spectrometer at temperatures between 1770 and 2000 K. The thermal functions for Si3N(g) were calculated from theoretical molecular constants, and the enthalpy change for the dissociation reaction: Si3N(g)=Si2N(g)+Si(g) determined. With the revised atomization enthalpy of Si2N(g), ΔatomHmo=1011±12 kJ mol−1 at T=0 K and 1020±12 kJ mol−1 at T=298.15 K, the atomization enthalpy of Si3N(g) was derived as 1298±19 kJ mol−1 at T=0 and 1312±19 kJ mol−1 at T=298.15 K. These values in combination with the enthalpies of formation of Si(g) and N(g) yielded the enthalpies of formation ΔfHmo at T=298.15 K: 352±15 kJ mol−1 for Si2N(g), and 511±22 kJ mol−1 for Si3N(g). Experimental and theoretical bond dissociation energies have been compared and discussed, indicating a very strong bonding of nitrogen to Si3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473610
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  • 6
    Electronic Resource
    Electronic Resource
    Restoration of cytomegalovirus-specific CD4 + T-lymphocyte responses after ganciclovir and highly active antiretroviral therapy in individuals infected with HIV-1 (1998)
    [s.l.] : Nature Publishing Group
    Nature medicine 4 (1998), S. 953-956 
    Details
    ISSN: 1546-170X
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] Recent studies of subjects infected with human immunodeficiency virus (HIV-1) have produced conflicting results about the extent of reconstitution possible in the CD4+ lymphocyte repertoire after highly active antiretroviral therapy1–3 (HAART). The effect of HAART on the incidence of ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nm0898-953
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  • 7
    Electronic Resource
    Electronic Resource
    Solution-Precipitation of Fine Powders of Barium Titanate and Strontium Titanate (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Hydrolytic reactions of metal alkoxides offer a broad range of possibilities for their use in the preparation of ceramic powders. This paper reports a unique and novel process to prepare fine powders of BaTiO3 and SrTiO3 from stable precursor solutions by carefully controlling the pH and temperature. This simple route offers good control of stoichiometry and the powders are agglomerate-free with fine particles of size 0.06–0.1 µm and were well sintered at 1200° and 1350°C, respectively. The dielectric properties of the dense ceramics are also reported. The formation aspects of these perovskite phases are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb02126.x
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  • 8
    Electronic Resource
    Electronic Resource
    Optimizing the success of random searches (1999)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 401 (1999), S. 911-914 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] We address the general question of what is the best statistical strategy to adapt in order to search efficiently for randomly located objects (‘target sites’). It is often assumed in foraging theory that the flight lengths of a forager have a characteristic scale: from this ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/44831
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of state of charge on impedance spectrum of sealed cells Part I: Ni-Cd cells (1995)
    Springer
    Journal of applied electrochemistry 25 (1995), S. 716-728 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Alternating current impedance spectroscopy (ACIS) was performed on commercial sealed Ni-Cd cells. A method previously developed in the literature was modified to determine the state of charge of sealed Ni-Cd cells by obtaining the impedance spectrum in a wide frequency range. The impedance parameters were sensitive to state of charge at low frequencies. A modified Randles' circuit was used to fit the impedance data. Appropriate modifications were made to account for an additional high frequency arc or a low frequency finite diffusion element. The effect of the state of charge on the equivalent circuit parameters was determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00648627
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of state of charge on impedance spectrum of sealed cells Part II: Lead acid batteries (1995)
    Springer
    Journal of applied electrochemistry 25 (1995), S. 729-739 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Alternating current impedance spectroscopy (ACIS) was performed on commercial sealed lead acid batteries. A method previously developed in the literature was modified to determine the state of charge of sealed lead acid cells by obtaining the impedance spectrum in a wide frequency range. The data were sensitive to state of charge at low frequencies. A modified Randles' circuit was used to fit the impedance data. The effect of the state of charge on the equivalent circuit parameters was determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00648628
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