ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The transverse stability of an impact-ionization front in a large-area silicon p +-n-n + structure is studied. An analytical model allowing for simultaneous motion of the ionization front and displacement of the majority carriers from the nondepleted part of the n base is proposed. The stability of a planar front is investigated, the growth increments are calculated, and the physical mechanisms of instability are indicated. A criterion is formulated for quasistable propagation of a wave.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187164
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