Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 4093-4095
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel selectively doped AlGaAs/GaAs heterojunction was successfully formed on a vicinal (111)B substrate, in which both quasiperiodic and aperiodic multiatomic steps with the average spacings of ∼20 nm are introduced. It is found that the electrical conductance G⊥ of two-dimensional electrons across the steps is far lower than that of G(parallel) along the steps and the ratio G(parallel)/G⊥ exceeds 100 at 18 K. While G(parallel) is almost independent of temperature T below ∼70 K, G⊥ increases exponentially with 1/T with the activation energy of ∼5 meV, indicating the presence of potential barriers for the electron motion across the aperiodic steps. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117829
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