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  • 1
    Electronic Resource
    Electronic Resource
    Synchrotron-radiation photochemical-vapor deposition of amorphous carbon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3453-3457 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy synchrotron-radiation (SR) light was applied to the photochemical-vapor deposition of amorphous carbon films. The source gases of CH4 and H2 have been directly photodissociated by the ultraviolet SR light to deposit carbon films on the heated Si substrate. The film structure was characterized by field-emission scanning electron microscopy, Raman scattering, and infrared absorption, which indicate the film to be a rigid amorphous structure comprised of mostly sp3-bonded carbon. The advantage as well as the limitation of the synchrotron-radiation process to the synthesis of functional materials is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358639
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  • 2
    Electronic Resource
    Electronic Resource
    Initial growth of chemical-vapor-deposited SiO2 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2655-2661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiO2 was deposited on three single-crystalline substrates: alumina, CaF2, and hydrogen-terminated silicon, by chemical vapor deposition (CVD) using tetraethoxysilane (TEOS) and ozone (O3). The deposited layers were then examined by using atomic force microscopy (AFM). For deposition times of 3, 8, 15, and 180 s, the film thickness ranged from less than 2.4 to 150 nm, respectively. Comparison of the surface roughness with the film thickness, as determined independently by ellipsometry, indicated that the thinnest film formed on the silicon surface (2.4 nm) was continuous. During film formation, for all three substrates, the surface roughness increased initially, reached a maximum, and then decreased. Surprisingly, the surface became smooth (within the resolution of 0.2 nm of our AFM). For the silicon substrate, this smoothing occurred between 3 and 8 s, which corresponds to 2.4 and 6.4 nm of deposition, respectively. Furthermore, just before the smoothing started, the surface of the deposited film contained protuberances, 1.6 nm high and 16 nm×16 nm in area. This indicates that smooth film of a few tens angstroms in thickness can form on the silicon. The smoothing of the protuberances occurred between 3 and 8 s for the CaF2 substrate, and between 15 to 180 s for the alumina substrate. The initial formation of a rough surface followed by smoothing is likely to be inherent in TEOS/O3 CVD systems, irrespective of substrate type. Surface-tension-induced flows of the surface, which has liquidlike properties, is a plausible mechanism. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366081
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  • 3
    Electronic Resource
    Electronic Resource
    Growth mechanism of nanoparticles prepared by radio frequency sputtering (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1404-1407 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth mechanisms of nanometer-sized particles prepared by rf sputtering on silica glass layers were examined. Gold and gallium arsenide (GaAs) particles synthesized with varying sputtering times on a SiO2 sputtered layer were subsequently buried in a SiO2 film by sputtering a SiO2 target. Transmission electron microscopy showed that in both cases, with increasing sputtering time, the number density decreased and the distance between neighboring particles increased in the initial stage of the growth, which suggests that the particles migrate on the SiO2 surface and coalesce with each other as they grow. Differences of GaAs and gold particle formation suggest that the mobility of the GaAs particles is much larger than that of gold. The results suggest that the migration of nanoparticles is activated by the bond-formation energy released during the incorporation of precursors into growing particles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365917
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis of GaAs nanoparticles by digital radio frequency sputtering (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3483-3485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-sized GaAs particles embedded in SiO2 were prepared by a digital rf-sputtering method, where GaAs and SiO2 targets were alternately sputtered in an Ar atmosphere. The GaAs deposition time was kept shorter than the time required to form a continuous layer. Transmission electron microscopy observations showed that the sizes of the GaAs particles can be controlled from 2 to 8 nm by changing the sputtering cycle time of the GaAs target. In spite of their small size, the GaAs particles have crystallinity similar to the target material without substrate heating or postannealing. The optical absorption spectra of the GaAs particles show a blue shift as large as 1.6 eV, corresponding to strong quantum confinement of electrons and holes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115254
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  • 5
    Electronic Resource
    Electronic Resource
    Control of SiH4/O2 chemical vapor deposition using the gas-phase additive C2H4 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2858-2860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of adding C2H4 on the chemical vapor deposition (CVD) of SiO2 films from SiH4/O2 were studied at temperatures ranging from 673 to 1073 K using a hot-wall-type tubular reactor. Adding C2H4 improved the step coverage of the films while effectively suppressing the gas-phase formation of particles. Because C2H4 is a well-known radical scavenger, the control of gas-phase chain reactions by consuming atom and/or radical species is responsible for the suppression of particle formation. Comparison of the sticking probability of growth species in SiH4/O2 systems with and without added C2H4 shows that high deposition temperatures are responsible for the improvement in step coverage. The analysis of the carbon content in the films by x-ray photoelectron spectroscopy (XPS) shows no difference in carbon impurity levels between the SiH4/O2/C2H4 and SiH4/O2 chemical systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113453
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  • 6
    Electronic Resource
    Electronic Resource
    Synthesis of nanometer-size silver coated polymerized diacetylene composite particles (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1288-1290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the synthesis of stable nanometer-size silver-coated polydiacetylene (PDA) particles. At first, an ethanol solution of diacetylene (DA) is dispersed into a Ag+ ion containing aqueous solution. Silver ions are attracted to –CCO− anions of DA, then monomer DA vesicles coated by silver ions are formed by a long-term ultrasonication treatment. The monomer DA vesicles are photopolymerized and the silver ions are photo-reduced simultaneously to form coated composite particles. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115955
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  • 7
    Electronic Resource
    Electronic Resource
    Wind-wave driven circulation on the coral reef at Bora Bay, Miyako Island (1998)
    Springer
    Coral reefs 17 (1998), S. 133-143 
    Details
    ISSN: 1432-0975
    Keywords: Key words coral reefs ; radiation stress ; water circulation ; residence time ; circulation modeling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Geosciences
    Notes: Abstract  Current records from three surveys at Bora Bay, Miyako Island, all showed strong unidirectional flows. Ocean water entered the lagoon over the shallower western half of the reef flat and exited the lagoon through a channel on the eastern side. Fourier transform of one of the survey data sets showed that this unidirectional flow is modulated on a cycle with a period half as long as the dominant M2 tidal cycle. The prominent features of the observed time-series current profiles were well reproduced using a numerical simulation that includes a depth dependent formulation of the wind-wave forced cross-reef water flow. The water residence times of the lagoon varied from 1.5 h to 3.7 h when calculated directly from the modeled current field, and from 2.0 h to 9.3 h when calculated as the time required for modeled particles to exit the lagoon. These residence times are surprisingly short and may help to explain how this reef supports high net organic production. Furthermore, the short particle residence times show the importance of analyzing currents on time scales smaller than the dominant tidal cycle to understand the fate of organic material produced in coral reefs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003380050107
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  • 8
    Electronic Resource
    Electronic Resource
    Bone-resorbing activities of 24-epi-1α-hydroxyvitamin D2 and 24-epi-1α,25-dihydroxyvitamin D2 (1995)
    Springer
    Calcified tissue international 56 (1995), S. 49-53 
    Details
    ISSN: 1432-0827
    Keywords: Bone resorption ; Osteoclast formation ; Resorption lacunae ; 24-epi-1α-hydroxyvitamin D2 ; 24-epi-1α,25-dihydroxyvitamin D2
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine , Physics
    Notes: Abstract Bone-resorbing activities of 24-epi-1α-hydroxyvitamin D2 [24-epi-1α(OH)D2], 24-epi-1α,25-dihydroxyvitamin D2 [24-epi-1,25(OH)2D2], and 1α,24S,25-trihydroxyvitamin D2 [1,24S,25(OH)3D2], which might be a metabolite of 24-epi-1,25(OH)2D2, were investigated. In an in vitro bone resorption test, the activity of 24-epi-1α(OH)D2 was similar to that of 1α-hydroxyvitamin D3 [1α(OH)D3] at 10-9 M-10-6 M. The activity of 24-epi-1,25(OH)2D2 was weaker than that of 1α,25-dihydroxyvitamin D3 [1,25(OH)2D3] at 10-11 M-10-8 M. On the other hand, the activity of 1,24S,25(OH)3D2 was similar to that of 24-epi-1,25(OH)2D2 at 10-11 M-10-9 M. In the formation assay of osteoclast-like cells, the activity of 24-epi-1α(OH)D2 was weaker than that of 1α(OH)D3 at 10-7 M. The activity of 24-epi-1,25(OH)2D2 was almost similar to that of 1,25(OH)2D3 at 10-11 M-10-7 M. The activity of 1,24S,25(OH)3D2 was significantly weaker than that of 24-epi-1,25(OH)2D2 at 10-11 M-10-9 M. In the two experiments, the potencies of 24-epi-1,25(OH)2D2 were about 100 times higher than those of 24-epi-1α(OH)D2. In an in vivo/in vitro bone resorption test, the activity of 24-epi-1α(OH)D2 was almost similar to those of 1α(OH)D3 and 1,25(OH)2D3 and higher than those of 24-epi-1,25(OH)2D2 and 1,24S,25(OH)3D2. 24-epi-1α-(OH)D2 and 1α(OH)D3 were longer lasting than 24-epi-1,25(OH)2D2 and 1,25(OH)2D3 in this experiment. These results suggested that 24-epi-1α(OH)D2 as well as 1α(OH)D3 was converted into dihydroxy form in vivo.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00298744
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  • 9
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    Synthesis of nanometer‐size silver coated polymerized diacetylene composite particles (1996)
    American Institute of Physics
    Details
    Publication Date: 1996-02-26
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Synthesis of GaAs nanoparticles by digital radio frequency sputtering (1995)
    American Institute of Physics
    Details
    Publication Date: 1995-12-04
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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