ISSN:
1476-4687
Source:
Nature Archives 1869 - 2009
Topics:
Biology
,
Chemistry and Pharmacology
,
Medicine
,
Natural Sciences in General
,
Physics
Notes:
[Auszug] The semiconductor samples are grown by molecular beam epitaxy on semi-insulating GaAs substrates, and consist of 500-nm undoped GaAs epitaxial layers grown atop 50-nm AlAs and a 500-nm GaAs buffer. These structures are then uniformly implanted with Mn+ ions at energies of 50 and 200 keV ...
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1038/377707a0
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